DISCRETE SEMICONDUCTORS
DATA SH EET
M3D125
2N2907; 2N2907A
PNP switching transistors
Product specification
Supersedes data of September 1994
1997 May 30
File under Discrete Semiconductors, SC04
Philips Semiconductors Product specification
PNP switching transistors 2N2907; 2N2907A
FEATURES
• High current (max. 600 mA)
• Low voltage (max. 60 V).
PINNING
PIN DESCRIPTION
1 emitter
2 base
APPLICATIONS
3 collector, connected to case
• Switching and linear amplification.
DESCRIPTION
PNP switching transistor in a TO-18 metal package.
NPN complements: 2N2222 and 2N2222A.
handbook, halfpage
3
1
2
2
MAM263
3
1
Fig.1 Simplified outline (TO-18) and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
CBO
CEO
collector-base voltage open emitter −−60 V
collector-emitter voltage open base
2N2907 −−40 V
2N2907A −−60 V
I
C
P
tot
h
FE
f
T
t
off
collector current (DC) −−600 mA
total power dissipation T
≤ 25 °C − 400 mW
amb
DC current gain IC= −150 mA; VCE= −10 V 100 300
transition frequency IC= −50 mA; VCE= −20 V; f = 100 MHz 200 − MHz
turn-off time I
= −150 mA; I
Con
= −15 mA; I
Bon
=15mA − 300 ns
Boff
1997 May 30 2
Philips Semiconductors Product specification
PNP switching transistors 2N2907; 2N2907A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−60 V
collector-emitter voltage open base; IC<−100 mA
2N2907 −−40 V
2N2907A −−60 V
emitter-base voltage open collector −−5V
collector current (DC) −−600 mA
peak collector current −−800 mA
peak base current −−200 mA
total power dissipation T
≤ 25 °C − 400 mW
amb
T
≤ 25 °C − 1.2 W
case
storage temperature −65 +150 °C
junction temperature − 200 °C
operating ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-a
th j-c
thermal resistance from junction to ambient in free air 438 K/W
thermal resistance from junction to case 146 K/W
1997 May 30 3