Philips 2N2484 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D125
2N2484
NPN general purpose transistor
Product specification
Supersedes data of September 1994
1997 May 01
File under Discrete Semiconductors, SC04
Philips Semiconductors Product specification
NPN general purpose transistor 2N2484
FEATURES
• Low current (max. 50 mA)
• Low voltage (max. 60 V)
PINNING
PIN DESCRIPTION
1 emitter
2 base
APPLICATIONS
3 collector, connected to the case
• General purpose switching and amplification
• High performance (low-level), low-noise amplifier
applications both for direct current and frequencies
up to 100 MHz.
DESCRIPTION
NPN transistor in a TO-18; SOT18 metal package.
handbook, halfpage
1
3
2
2
MAM264
3
1
Fig.1 Simplified outline (TO-18; SOT18)
and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
V
I
P
h
f
CBO
CEO
CM
tot
FE
T
collector-base voltage open emitter −−60 V
collector-emitter voltage open base −−60 V
peak collector current −−100 mA
total power dissipation T
≤ 25 °C −−360 mW
amb
DC current gain IC=10µA; VCE= 5 V 100 − 500
I
= 1 mA; VCE= 5 V 250 −−
C
I
= 10 mA; VCE=5V −−800
C
transition frequency IC= 0.5 mA; VCE= 5 V; f = 100 MHz 60 80 − MHz
1997 May 01 2
Philips Semiconductors Product specification
NPN general purpose transistor 2N2484
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 60 V
collector-emitter voltage open base − 60 V
emitter-base voltage open collector − 6V
collector current (DC) − 50 mA
peak collector current − 100 mA
peak base current − 50 mA
total power dissipation T
≤ 25 °C − 360 mW
amb
storage temperature −65 +150 °C
junction temperature − 200 °C
operating ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
R
th j-a
th j-c
thermal resistance from junction to ambient 480 K/W
thermal resistance from junction to case 150 K/W
1997 May 01 3
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