Philips 2N2369 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D125
2N2369
NPN switching transistor
Product specification
Supersedes data of September 1994
1997 Jun 20
File under Discrete Semiconductors, SC04
Philips Semiconductors Product specification
NPN switching transistor 2N2369
FEATURES
• Low current (max. 200 mA)
• Low voltage (max. 15 V).
PINNING
PIN DESCRIPTION
1 emitter
2 base
APPLICATIONS
3 collector, connected to case
• High-speed switching
• VHF amplification.
3
1
DESCRIPTION
NPN switching transistor in a TO-18 metal package.
handbook, halfpage
1
3
2
2
MAM264
Fig.1 Simplified outline (TO-18) and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
P
h
f
t
CBO
CEO
C
tot
FE
T
off
collector-base voltage open emitter − 40 V
collector-emitter voltage open base − 15 V
collector current (DC) − 200 mA
total power dissipation T
≤ 25 °C − 360 mW
amb
DC current gain IC= 10 mA; VCE=1V; Tj=25°C 40 120
transition frequency IC= 10 mA; VCE= 10 V; f = 100 MHz 500 − MHz
turn-off time I
= 10 mA; I
Con
Bon
= 3 mA; I
= −1.5 mA − 30 ns
Boff
1997 Jun 20 2
Philips Semiconductors Product specification
NPN switching transistor 2N2369
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 40 V
collector-emitter voltage open base − 15 V
emitter-base voltage open collector − 5V
collector current (DC) − 200 mA
peak collector current tp=10ms − 300 mA
peak base current − 100 mA
total power dissipation T
≤ 25 °C − 360 mW
amb
storage temperature −65 +150 °C
junction temperature − 200 °C
operating ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-a
th j-c
thermal resistance from junction to ambient in free air 480 K/W
thermal resistance from junction to case 145 K/W
1997 Jun 20 3
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