Philips 2N1893 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D111
2N1893
NPN medium power transistor
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Apr 17
Philips Semiconductors Product specification
NPN medium power transistor 2N1893
FEATURES
• Low current (max. 500 mA)
• Low voltage (max. 80 V).
PINNING
PIN DESCRIPTION
1 emitter
2 base
APPLICATIONS
3 collector, connected to case
• High performance amplifiers
• Oscillator and switching applications.
handbook, halfpage
1
2
DESCRIPTION
NPN medium power transistor in a TO-39 metal package.
3
2
MAM317
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
I
CM
P
tot
h
FE
collector-base voltage open emitter − 120 V
collector-emitter voltage open base − 80 V
peak collector current − 1A
total power dissipation T
≤ 25 °C − 3W
case
DC current gain IC= 150 mA; VCE= 10 V 40 120
3
1
1997 Apr 17 2
Philips Semiconductors Product specification
NPN medium power transistor 2N1893
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 120 V
collector-emitter voltage open base − 80 V
emitter-base voltage open collector − 7V
collector current (DC) − 500 mA
peak collector current − 1A
peak base current − 200 mA
total power dissipation T
≤ 25 °C − 800 mW
amb
T
≤ 100 °C − 1.7 W
case
T
≤ 25 °C − 3W
case
storage temperature −65 +150 °C
junction temperature − 200 °C
operating ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-a
th j-c
thermal resistance from junction to ambient in free air 219 K/W
thermal resistance from junction to case 58.3 K/W
CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
V
V
C
C
FE
CEsat
BEsat
c
e
collector cut-off current IE= 0; VCB=90V − 10 nA
I
= 0; VCB=90V; T
E
= 150 °C − 15 µA
amb
emitter cut-off current IC= 0; VEB=5V − 10 nA
DC current gain IC= 0.1 mA; VCE=10V 20 −
= 10 mA; VCE=10V; T
I
C
= 10 mA; VCE= 10 V; note 1 35 −
I
C
I
= 150 mA; VCE= 10 V; note 1 40 120
C
= −55 °C20 −
amb
collector-emitter saturation voltage IC= 50 mA; IB= 5 mA; note 1 − 900 mV
I
= 150 mA; IB= 15 mA; note 1 − 500 mV
C
base-emitter saturation voltage IC= 50 mA; IB= 5 mA; note 1 − 1.2 V
I
= 150 mA; IB= 15 mA; note 1 − 1.3 V
C
collector capacitance IE=ie= 0; VCB= 10 V; f = 1 MHz − 15 pF
emitter capacitance IC=ic= 0; VEB= 0.5 V; f = 1 MHz − 85 pF
Note
1. Pulse test: t
≤ 300 µs; δ = 0.02.
p
1997 Apr 17 3
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