Philips 2n1613 DATASHEETS
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D111
2N1613
NPN medium power transistor
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Apr 11
Philips Semiconductors Product specification
NPN medium power transistor 2N1613
FEATURES
• Low current (max. 500 mA)
• Low voltage (max. 50 V).
PINNING
PIN DESCRIPTION
1 emitter
2 base
APPLICATIONS
3 collector, connected to case
• High-speed switching and amplification.
DESCRIPTION
NPN medium power transistor in a TO-39 metal package.
handbook, halfpage
1
2
2
3
MAM317
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
I
CM
P
tot
h
FE
f
T
collector-base voltage open emitter − 75 V
collector-emitter voltage open base − 50 V
peak collector current − 1A
total power dissipation T
≤ 25 °C − 0.8 W
amb
DC current gain IC= 150 mA; VCE= 10 V 40 120
transition frequency IC= 50 mA; VCE= 10 V; f = 100 MHz 60 − MHz
3
1
1997 Apr 11 2
Philips Semiconductors Product specification
NPN medium power transistor 2N1613
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 75 V
collector-emitter voltage open base − 50 V
emitter-base voltage open collector − 7V
collector current (DC) − 500 mA
peak collector current − 1A
peak base current − 200 mA
total power dissipation T
≤ 25 °C − 0.8 W
amb
T
= 100 °C − 1.7 W
case
T
≤ 25 °C − 3W
case
storage temperature −65 +150 °C
junction temperature − 200 °C
operating ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-a
th j-c
thermal resistance from junction to ambient note 1 218 K/W
thermal resistance from junction to case 58.3 K/W
Note
1. Refer to TO-39 standard mounting conditions.
1997 Apr 11 3
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