Datasheet 1PS79SB31 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

M3D319

1PS79SB31

Schottky barrier diode

Product specification 2002 Jan 11

Philips Semiconductors Product specification

Schottky barrier diode 1PS79SB31

FEATURES

• Very low forward voltage

• Guard ring protected

• Ultra small SMD package.

APPLICATIONS

• Ultra high-speed switching

• Voltage clamping

• Protection circuits

• Low current rectification

• Low power consumption applications (e.g. hand-held

devices).

DESCRIPTION

handbook, halfpage

Marking code: G3.
The marking bar indicates the cathode.

ka

Top view

MAM403

Fig.1 Simplified outline SOD523 (SC-79) and

symbol.

Planar Schottky barrier diode in a SOD523 (SC-79) ultra
small SMD plastic package.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
I

F

I

FRM

I

FSM

R

continuous reverse voltage − 30 V
continuous forward current − 200 mA
repetitive peak forward current tp≤ 1s;δ≤0.5 − 300 mA
non-repetitive peak forward current t = 8.3 ms half sine wave;

− 1000 mA

JEDEC method

T

stg

T

j

T

amb

storage temperature −65 +150 °C
junction temperature − 125 °C
operating ambient temperature −65 +125 °C

2002 Jan 11 2

Philips Semiconductors Product specification

Schottky barrier diode 1PS79SB31

ELECTRICAL CHARACTERISTICS

T

=25°C unless otherwise specified.

amb

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

F

I

R

C

d

Note

1. Pulse test: t

forward voltage see Fig.2;

I

= 0.1 mA 130 190 mV

F

I

= 1 mA 190 250 mV

F

= 10 mA 255 300 mV

I

F

I

= 100 mA 355 410 mV

F

= 200 mA 420 500 mV

I

F

continuous reverse current VR= 10 V; note 1; see Fig.3 2.5 30 µA
diode capacitance VR= 1 V; f = 1 MHz; see Fig.4 20 25 pF

= 300 µs; δ = 0.02.

p

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

thermal resistance from junction to

note 1 450 K/W

ambient

Note

1. Refer to SC-79 (SOD523) standard mounting conditions.

2002 Jan 11 3

Philips Semiconductors Product specification

Schottky barrier diode 1PS79SB31

GRAPHICAL DATA

3

10

handbook, halfpage

I

F

(mA)

2

10

(1) (2) (3)

MGU517

10

(1) T
(2) T
(3) T

1

amb
amb
amb

= 125°C.
=85°C.
=25°C.

0.8
VF (V)

Fig.2 Forward current as a function of forward

voltage; typical values.

4

10

handbook, halfpage

I

R

(µA)

3

10

2

10

(1)

(2)

MGU518

10

(3)

1

−1

(1) T
(2) T
(3) T

10

amb
amb
amb

= 125°C.
=85°C.
=25°C.

VR (V)

3010020

10 0.2 0.4 0.6

Fig.3 Reverse current as a function of reverse

voltage; typical values.

40

handbook, halfpage

C

d

(pF)

MGU519

30

20

10

0

01020

(1) f = 1 MHz; T

amb

=25°C.

VR (V)

30

Fig.4 Diode capacitance as a function of reverse

voltage; typical values.

2002 Jan 11 4

Philips Semiconductors Product specification

Schottky barrier diode 1PS79SB31

PACKAGE OUTLINE

Plastic surface mounted package; 2 leads SOD523

A

c

vM

H

E

A

D

12

b

E

p

(1)

OUTLINE

VERSION

SOD523 SC-79

IEC JEDEC EIAJ

A

REFERENCES

0 0.5 1 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT b

mm

Note

1. The marking bar indicates the cathode.

0.7

0.5

A

0.35

0.25

p

PROJECTION

cD

0.2

1.3

0.1

1.1

EUROPEAN

E

0.9

0.7

H

E

1.7

0.15

1.5

ISSUE DATE

98-11-25

v

2002 Jan 11 5

Philips Semiconductors Product specification

Schottky barrier diode 1PS79SB31

DATA SHEET STATUS

PRODUCT

DATA SHEET STATUS

Objective data Development This data sheet contains data from the objective specification for product

Preliminary data Qualification This data sheet contains data from the preliminary specification.

Product data Production This data sheet contains data from the product specification. Philips

(1)

STATUS

(2)

DEFINITIONS

development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.

Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

DEFINITIONS
Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseor at any otherconditionsabovethose given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythat such applications will be
suitable for the specified use without further testing or
modification.

DISCLAIMERS
Life support applications  These products are not

designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorselling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuseof any of these products, conveysnolicenceortitle
under any patent, copyright, or mask work right to these
products,and makes no representations orwarrantiesthat
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.

2002 Jan 11 6

Philips Semiconductors Product specification

Schottky barrier diode 1PS79SB31

NOTES

2002 Jan 11 7

Philips Semiconductors – a w orldwide compan y

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: [phone]
For sales offices addresses send e-mail to: [e-mail].

© Koninklijke Philips Electronics N.V. 2002
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
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Printed in The Netherlands 613514/01/pp8 Date of release: 2002 Jan 11 Document order number: 9397 750 08964

SCA74