Philips 1PS79SB31 Technical data
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D319
1PS79SB31
Schottky barrier diode
Product specification 2002 Jan 11
Philips Semiconductors Product specification
Schottky barrier diode 1PS79SB31
FEATURES
• Very low forward voltage
• Guard ring protected
• Ultra small SMD package.
APPLICATIONS
• Ultra high-speed switching
• Voltage clamping
• Protection circuits
• Low current rectification
• Low power consumption applications (e.g. hand-held
devices).
DESCRIPTION
handbook, halfpage
Marking code: G3.
The marking bar indicates the cathode.
ka
Top view
MAM403
Fig.1 Simplified outline SOD523 (SC-79) and
symbol.
Planar Schottky barrier diode in a SOD523 (SC-79) ultra
small SMD plastic package.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
I
F
I
FRM
I
FSM
R
continuous reverse voltage − 30 V
continuous forward current − 200 mA
repetitive peak forward current tp≤ 1s;δ≤0.5 − 300 mA
non-repetitive peak forward current t = 8.3 ms half sine wave;
− 1000 mA
JEDEC method
T
stg
T
j
T
amb
storage temperature −65 +150 °C
junction temperature − 125 °C
operating ambient temperature −65 +125 °C
2002 Jan 11 2
Philips Semiconductors Product specification
Schottky barrier diode 1PS79SB31
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
F
I
R
C
d
Note
1. Pulse test: t
forward voltage see Fig.2;
I
= 0.1 mA 130 190 mV
F
I
= 1 mA 190 250 mV
F
= 10 mA 255 300 mV
I
F
I
= 100 mA 355 410 mV
F
= 200 mA 420 500 mV
I
F
continuous reverse current VR= 10 V; note 1; see Fig.3 2.5 30 µA
diode capacitance VR= 1 V; f = 1 MHz; see Fig.4 20 25 pF
= 300 µs; δ = 0.02.
p
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to
note 1 450 K/W
ambient
Note
1. Refer to SC-79 (SOD523) standard mounting conditions.
2002 Jan 11 3
Loading...