Philips 1PS79SB10 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D319
1PS79SB10
Schottky barrier diode
Product specification
1998 Jul 16
Philips Semiconductors Product specification
Schottky barrier diode 1PS79SB10
FEATURES
• Low forward voltage
• Guard ring protected
DESCRIPTION
Planar Schottky barrier diode encapsulated in a SC-79 ultra small plastic SMD
package.
• Ultra small plastic SMD package.
APPLICATIONS
• Ultra high-speed switching
handbook, halfpage
ka
• Voltage clamping
• Protection circuits
Top view
MAM403
• Blocking diodes.
Marking code: F.
Fig.1 Simplified outline (SC-79) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
I
F
I
FRM
I
FSM
T
T
T
R
stg
j
amb
continuous reverse voltage − 30 V
continuous forward current − 200 mA
repetitive peak forward current tp≤ 1s; δ≤0.5 − 300 mA
non-repetitive peak forward current tp<10ms − 600 mA
storage temperature −65 +150 °C
junction temperature − 125 °C
operating ambient temperature −65 +125 °C
1998 Jul 16 2
Philips Semiconductors Product specification
Schottky barrier diode 1PS79SB10
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
I
R
C
d
Note
1. Pulsed test: t
continuous forward voltage see Fig.2
I
= 0.1 mA 240 mV
F
I
= 1 mA 320 mV
F
= 10 mA 400 mV
I
F
I
= 30 mA 500 mV
F
I
= 100 mA 800 mV
F
continuous reverse current VR= 25 V; note 1; see Fig.3 2 µA
diode capacitance VR= 1 V; f = 1 MHz; see Fig.4 10 pF
= 300 µs; δ = 0.02.
p
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 450 K/W
Note
1. Refer to SC-79 standard mounting conditions.
1998 Jul 16 3
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