Philips 1PS76SB70 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
k, halfpage
M3D049
1PS76SB70
Schottky barrier diode
Product specification
1998 Jul 16
Philips Semiconductors Product specification
Schottky barrier diode 1PS76SB70
FEATURES
• Low forward voltage
• Guard ring protected
DESCRIPTION
Planar Schottky barrier diode encapsulated in a SOD323 very small plastic
SMD package.
• Very small plastic SMD package
• Low diode capacitance.
APPLICATIONS
handbook, 4 columns
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• Ultra high-speed switching
• Voltage clamping
MAM283
• Protection circuits
• Blocking diodes.
Marking code: S2.
Fig.1 Simplified outline (SOD323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
I
F
I
FRM
I
FSM
T
T
T
R
stg
j
amb
continuous reverse voltage − 70 V
continuous forward current − 70 mA
repetitive peak forward current tp≤ 1s; δ≤0.5 − 70 mA
non-repetitive peak forward current tp<10ms − 100 mA
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
1998 Jul 16 2
Philips Semiconductors Product specification
Schottky barrier diode 1PS76SB70
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
I
R
C
d
Note
1. Pulsed test: t
THERMAL CHARACTERISTICS
continuous forward voltage see Fig.2
I
= 1 mA 410 mV
F
I
= 10 mA 750 mV
F
=15mA 1 V
I
F
continuous reverse current VR= 50 V; note 1; see Fig.3 100 nA
V
= 70 V; note 1; see Fig.3 10 µA
R
diode capacitance VR= 0 ; f = 1 MHz; see Fig.5 2 pF
= 300 µs; δ = 0.02.
p
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 450 K/W
Note
1. Refer to SOD323 standard mounting conditions.
1998 Jul 16 3
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