Philips 1PS76SB17 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

halfpage

M3D049

1PS76SB17

Schottky barrier diode

Preliminary specification
Supersedes data of 1996 Oct 14

1999 May 25

Philips Semiconductors Preliminary specification

Schottky barrier diode 1PS76SB17

FEATURES

• Low forward voltage

• Low diode capacitance

DESCRIPTION

Planar Schottky barrier diode encapsulated in a SOD323 very small plastic
SMD package.

• ESD > 500 V; Human body model

• Very small plastic SMD package.

handbook, 4 columns

ka

APPLICATIONS

• UHF mixers

• Sampling circuits

• Modulators

• Phase detectors.

Marking code: S7.
The marking bar indicates the cathode.

MAM283

Fig.1 Simplified outline (SOD323) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER MIN. MAX. UNIT

V

R

I

F

T

stg

T

j

continuous reverse voltage
continuous forward current −

storage temperature
junction temperature

−

−65

−

4V
30 mA
+150 °C
100 °C

ELECTRICAL CHARACTERISTICS

=25°C unless otherwise specified.

T

amb

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

V

F

I

R

C

d

forward voltage see Fig.2

= 0.1 mA

I

F

I

= 1mA

F

I

=10mA

F

reverse current VR= 3 V; see Fig.3
diode capacitance f = 1 MHz; VR= 0 V; see Fig.4

f = 1 MHz; V

= 0.5 V; see Fig.4

R

− 300 mV
360 450 mV
470 600 mV

0.15 0.25

µA

0.8 1 pF

0.65 − pF

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

thermal resistance from junction to ambient note 1 450 K/W

Note

1. Refer to SOD323 standard mounting conditions.

1999 May 25 2

Philips Semiconductors Preliminary specification

Schottky barrier diode 1PS76SB17

GRAPHICAL DATA

2

10

handbook, halfpage

I

F

(mA)

MLC795

10

(1)
(2)
(3)

(4)

600 800400200

VF (mV)

(1) T
(2) T
(3) T
(4) T

10

10

1

−1

−2

amb
amb
amb
amb

0

= 100°C.
=60°C.
=25°C.
= −40 °C.

Fig.2 Forward current as a function of forward

voltage; typical values.

4

10

handbook, halfpage

I

R

MLC796

(nA)

3

10

2

10

(1)

(2)
(3)

10

(4)

213

V (V)

R

(1) T
(2) T
(3) T
(4) T

10

1

1

amb
amb
amb
amb

0

= 100 °C.
=60°C.
=25°C.
= −40 °C.

Fig.3 Reverse current as a function of reverse

voltage; typical values.

0.8

handbook, halfpage

C

d

MLC797

(pF)

0.7

0.6

0.5

0.4
01234

f = 1 MHz; T

amb

=25°C.

V (V)

R

Fig.4 Diode capacitance as a function of reverse

voltage; typical values.

1999 May 25 3