Philips 1PS76SB10 Datasheet

DISCRETE SEMICONDUCTORS
DATA SH EET
M3D049
1PS76SB10
Schottky barrier diode
Product specification
1996 Oct 14
Philips Semiconductors Product specification
Schottky barrier diode 1PS76SB10
FEATURES
Low forward voltage
Guard ring protected
DESCRIPTION
Planar Schottky barrier diode encapsulated in a SOD323 very small plastic SMD package.
Very small plastic SMD package.
APPLICATIONS
handbook, 4 columns
ka
Ultra high-speed switching
Voltage clamping
Protection circuits
Blocking diodes.
Marking code: S0. The marking bar indicates the cathode.
MAM283
Fig.1 Simplified outline (SOD323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V I
F
I
FRM
I
FSM
T T T
R
stg j amb
continuous reverse voltage continuous forward current
repetitive peak forward current tp≤ 1s;δ≤0.5 non-repetitive peak forward current tp<10ms storage temperature junction temperature operating ambient temperature
65
65
30 V 200 mA 300 mA 600 mA +150 °C 125 °C +125 °C
1996 Oct 14 2
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