Philips 1PS70SB20 Technical data
DISCRETE SEMICONDUCTORS
DATA SH EET
fpage
M3D102
1PS70SB20
Schottky barrier diode
Product specification 2001 Mar 16
Philips Semiconductors Product specification
Schottky barrier diode 1PS70SB20
FEATURES
• Ultra high switching speed
• Low forward voltage
DESCRIPTION
Planar Schottkybarrier diode with an integrated guard ring for stress protection
in a SOT323 (SC-70) small SMD plastic package.
• Guard ring protected
• Small SMD plastic package.
APPLICATIONS
• Ultra high-speed switching
handbook, halfpage
• Voltage clamping
• Protection circuits.
12
PINNING
Top view
PIN DESCRIPTION
1 anode
2 not connected
3 cathode
Marking code: 72.
Fig.1 Simplified outline (SOT323; SC-70) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
3
3
1
2
n.c.
MAM394
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
I
F
I
FSM
R
continuous reverse voltage −−40 V
continuous forward current −−500 mA
non-repetitive peak forward current t = 8.3 ms half sine wave;
− 2A
JEDEC method
T
stg
T
j
storage temperature −−65 +150 °C
junction temperature −−125 °C
2001 Mar 16 2
Philips Semiconductors Product specification
Schottky barrier diode 1PS70SB20
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
F
I
R
C
d
Note
1. Pulse test: t
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
forward voltage IF= 500 mA; see Fig.2 − 550 mV
reverse current VR= 35 V; see Fig.3 − 100 µA
V
= 35 V; Tj= 100 °C; see Fig.3;
R
− 10 mA
note 1
diode capacitance f = 1 MHz; VR= 0; see Fig.4 60 90 pF
= 300 µs; δ = 0.02.
p
thermal resistance from junction to ambient note 1 500 K/W
Note
1. Refer to SOT323 (SC-70) standard mounting conditions.
2001 Mar 16 3
Loading...