Philips 1PS10SB82 Technical data

Philips 1PS10SB82 Technical data

1PS10SB82

DISCRETE SEMICONDUCTORS

DATA SHEET

M3D891

BOTTOM VIEW

1PS10SB82

Schottky barrier diode

Product specification

 

2003 Aug 20

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Philips Semiconductors

Product specification

 

 

 

 

Schottky barrier diode

1PS10SB82

 

 

 

 

FEATURES

DESCRIPTION

Low forward voltage

An epitaxial Schottky barrier diode encapsulated in a

Low diode capacitance

SOD882 leadless ultra small plastic package.

 

Leadless ultra small plastic package

ESD sensitive device, observe handling precautions.

 

(1.0 mm × 0.6 mm × 0.5 mm)

 

Boardspace 1.17 mm2 (approx. 10% of SOT23)

Power dissipation comparable to SOT23.

APPLICATIONS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

UHF mixers

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Bottom view

MDB391

 

 

 

 

 

 

 

Sampling circuits

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Modulators

 

Marking code: S5.

 

 

 

 

 

 

 

Phase detectors

The marking bar indicates the cathode.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Mobile communication, digital (still) cameras, PDA’s and

Fig.1 Simplified outline (SOD882), pin

 

PCMCIA cards.

 

 

configuration and symbol.

 

LIMITING VALUES

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

In accordance with the Absolute Maximum Rating System (IEC 60134).

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SYMBOL

 

PARAMETER

 

 

 

 

 

MIN.

 

MAX.

UNIT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VR

 

continuous reverse voltage

 

 

 

 

 

15

 

 

 

 

V

IF

 

continuous forward current

 

 

 

 

 

30

 

 

 

 

mA

Tstg

 

storage temperature

 

 

 

 

65

 

+150

 

 

 

 

°C

Tj

 

junction temperature

 

 

 

 

 

150

 

 

 

 

°C

2003 Aug 20

2

Philips Semiconductors

 

 

Product specification

 

 

 

 

 

 

Schottky barrier diode

 

 

1PS10SB82

 

 

 

 

 

 

ELECTRICAL CHARACTERISTICS

 

 

 

 

Tamb = 25 °C unless otherwise specified.

 

 

 

 

 

 

 

 

 

 

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

 

 

 

 

 

 

VF

forward voltage

see Fig.2

 

 

 

 

 

IF = 1 mA

340

mV

 

 

IF = 30 mA

700

mV

rD

differential diode forward resistance

f = 1 MHz; IF = 5 mA; see Fig.5

12

Ω

IR

continuous reverse current

VR = 1 V; see Fig.3; note 1

0.2

μA

Cd

diode capacitance

VR = 0 V; f = 1 MHz; see Fig.4

1

pF

Note

1. Pulse test: tp = 300 μs; δ = 0.02.

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

 

CONDITIONS

VALUE

UNIT

 

 

 

 

 

 

Rth j-a

thermal resistance from junction to ambient

note 1

 

500

K/W

Note

1. Refer to SOD882 standard mounting conditions (footprint), FR4 with 60 μm copper strip line.

Soldering

Reflow soldering is the only recommended soldering method.

2003 Aug 20

3

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