Philips 1PS10SB82 Technical data
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1PS10SB82
Schottky barrier diode
Product specification 2003 Aug 20
Philips Semiconductors Product specification
Schottky barrier diode 1PS10SB82
FEATURES
• Low forward voltage
• Low diode capacitance
• Leadless ultra small plastic package
DESCRIPTION
An epitaxial Schottky barrier diode encapsulated in a
SOD882 leadless ultra small plastic package.
ESD sensitive device, observe handling precautions.
(1.0 mm × 0.6 mm × 0.5 mm)
• Boardspace 1.17 mm2 (approx. 10% of SOT23)
• Power dissipation comparable to SOT23.
handbook, halfpage
APPLICATIONS
• UHF mixers
Bottom view
MDB391
• Sampling circuits
• Modulators
• Phase detectors
• Mobilecommunication,digital(still)cameras,PDA’sand
PCMCIA cards.
Marking code: S5.
The marking bar indicates the cathode.
Fig.1 Simplified outline (SOD882), pin
configuration and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
R
I
F
T
stg
T
j
continuous reverse voltage − 15 V
continuous forward current − 30 mA
storage temperature −65 +150 °C
junction temperature − 150 °C
2003 Aug 20 2
Philips Semiconductors Product specification
Schottky barrier diode 1PS10SB82
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
F
r
D
I
R
C
d
Note
1. Pulse test: t
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
forward voltage see Fig.2
I
=1mA − 340 mV
F
I
=30mA − 700 mV
F
differential diode forward resistance f = 1 MHz; IF= 5 mA; see Fig.5 12 −Ω
continuous reverse current VR= 1 V; see Fig.3; note 1 − 0.2 µA
diode capacitance VR= 0 V; f = 1 MHz; see Fig.4 1 − pF
= 300 µs; δ = 0.02.
p
thermal resistance from junction to ambient note 1 500 K/W
Note
1. Refer to SOD882 standard mounting conditions (footprint), FR4 with 60 µm copper strip line.
Soldering
Reflow soldering is the only recommended soldering method.
2003 Aug 20 3
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