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DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D130
1N4728A to 1N4749A
Voltage regulator diodes
Product specification
Supersedes data of April 1992
1996 Apr 26
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Philips Semiconductors Product specification
Voltage regulator diodes 1N4728A to 1N4749A
FEATURES
• Total power dissipation:
max. 1000 mW
DESCRIPTION
Low voltage regulator diodes in hermetically sealed SOD66 (DO-41) packages.
The series consists of 22 types with nominal working voltages from 3.3 to 24 V.
• Tolerance series: ±5%
• Working voltage range:
nom. 3.3 to 24 V.
APPLICATIONS
• Low voltage stabilizers.
The diodes are type branded.
handbook, halfpage
ka
MAM241
Fig.1 Simplified outline (SOD66; DO-41) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
F
I
ZM
continuous forward current − 500 mA
working current see Table
“Per type”
I
ZSM
non-repetitive peak reverse current see Table
“Per type”
P
tot
T
stg
T
j
total power dissipation T
=50°C − 1000 mW
amb
storage temperature −65 +200 °C
junction temperature −65 +200 °C
ELECTRICAL CHARACTERISTICS
Total series
T
=25°C; unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
F
forward voltage IF= 200 mA; see Fig.3 − 1.2 V
1996 Apr 26 2