Philips 1N4532, 1N4531 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

ook, halfpage

M3D050

1N4531; 1N4532

High-speed diodes

Product specification
Supersedes data of April 1996

1996 Sep 03

Philips Semiconductors Product specification

High-speed diodes 1N4531; 1N4532

FEATURES

• Hermetically sealed leaded glass
SOD68 (DO-34) package

• High switching speed: max. 4 ns

DESCRIPTION

The 1N4531, 1N4532 are high-speed switching diodes fabricated in planar
technology, and encapsulated in hermetically sealed leaded glass
SOD68 (DO-34) packages.

• Continuous reverse voltage:
max. 75 V

• Repetitive peak reverse voltage:
max. 75 V

handbook, halfpage

k

a

• Repetitive peak forward current:
max. 450 mA.

APPLICATIONS

• High-speed switching

The diodes are type branded.

Fig.1 Simplified outline (SOD68; DO-34) and symbol.

MAM156

• Protection diodes in reed relays.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
I

F

I

FRM

I

FSM

RRM
R

repetitive peak reverse voltage − 75 V
continuous reverse voltage − 75 V
continuous forward current see Fig.2 − 200 mA
repetitive peak forward current − 450 mA
non-repetitive peak forward current square wave; Tj=25°C prior to

surge; see Fig.4

t=1µs − 4A
t=1ms − 1A
t=1s − 0.5 A

P

tot

T

stg

T

j

total power dissipation T

=25°C − 500 mW

amb

storage temperature −65 +200 °C
junction temperature − 200 °C

1996 Sep 03 2

Philips Semiconductors Product specification

High-speed diodes 1N4531; 1N4532

ELECTRICAL CHARACTERISTICS

T

=25°C; unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

F

I

R

C

d

t

rr

V

fr

forward voltage IF= 10 mA; see Fig.3 − 1000 mV
reverse current see Fig.5

IN4531 V

IN4532 V

=20V − 25 nA

R

=20V; Tj= 150 °C − 50 µA

V

R

=50V − 100 nA

R

V

=50V; Tj= 150 °C − 100 µA

R

diode capacitance f = 1 MHz; VR= 0; see Fig.6

IN4531 − 4pF
IN4532 − 2pF

reverse recovery time when switched from IF= 10 mA to

IN4531 − 4ns
IN4532 − 2ns

reverse recovery time when switched from I

IN4532 − 4ns

IR= 60 mA; RL= 100 Ω;
measured at IR= 1 mA; see Fig.7

= 10 mA to

F

IR= 10 mA; RL= 100 Ω;
measured at IR= 1 mA; see Fig.7

forward recovery voltage when switched from IF= 100 mA;

− 3V

tr≤ 30 ns; see Fig.8

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R
R

th j-tp
th j-a

thermal resistance from junction to tie-point lead length 5 mm 120 K/W
thermal resistance from junction to ambient lead length 5 mm; note 1 350 K/W

Note

1. Device mounted on a printed circuit-board without metallization pad.

1996 Sep 03 3