Philips 1N4150 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D176
1N4150; 1N4151
High-speed diodes
Product specification
Supersedes data of 1996 Sep 03
1999 Jun 01
Philips Semiconductors Product specification
High-speed diodes 1N4150; 1N4151
FEATURES
• Hermetically sealed leaded glass
SOD27 (DO-35) package
• High switching speed: max. 4 ns
• General application
• Continuous reverse voltage:
max. 50 V
• Repetitive peak reverse voltage:
max. 75 V
• Repetitive peak forward current:
max. 600 mA and 450 mA
respectively.
APPLICATIONS
• High-speed switching
• 1N4150: general purpose use in
computer and industrial
applications
• 1N4151: military and industrial
applications.
DESCRIPTION
The 1N4150 and 1N4151 are high-speed switching diodes fabricated in planar
technology, and encapsulated in hermetically sealed leaded glass SOD27
(DO-35) packages.
handbook, halfpage
The marking band indicates the cathode.
k
a
MAM246
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
RRM
R
F
repetitive peak reverse voltage − 75 V
continuous reverse voltage − 50 V
continuous forward current see Fig.2; note 1
1N4150 − 300 mA
1N4151 − 200 mA
I
FRM
repetitive peak forward current
1N4150 − 600 mA
1N4151 − 450 mA
I
FSM
non-repetitive peak forward current square wave; Tj=25°C prior to
surge; see Fig.4
t=1µs − 4A
t=1ms − 1A
t=1s − 0.5 A
P
tot
T
stg
T
j
total power dissipation T
=25°C; note 1 − 500 mW
amb
storage temperature −65 +200 °C
junction temperature − 200 °C
Note
1. Device mounted on an FR4 printed-circuit board; lead length 10 mm.
1999 Jun 01 2
Philips Semiconductors Product specification
High-speed diodes 1N4150; 1N4151
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
F
I
R
I
R
C
d
t
rr
t
rr
t
fr
forward voltage see Fig.3
1N4150 I
1N4151 I
= 1 mA 540 620 mV
F
I
= 10 mA 660 740 mV
F
= 50 mA 760 860 mV
I
F
I
= 100 mA 820 920 mV
F
I
= 200 mA 870 1000 mV
F
=50mA − 1000 mV
F
reverse current VR= 50 V; see Fig.5
1N4150 − 0.1 µA
1N4151 − 0.05 µA
reverse current VR= 50 V; Tj= 150 °C; see Fig.5
1N4150 − 100 µA
1N4151 − 50 µA
diode capacitance f = 1 MHz; VR= 0; see Fig.6
1N4150 − 2.5 pF
1N4151 − 2pF
reverse recovery time when switched from IF= 10 mA to
1N4150 − 6ns
IR= 1 mA; RL= 100 Ω; measured at
IR= 0.1 mA; see Fig.7
when switched from I
= 10 mA to 200 mA
F
− 4ns
to IR= 10 mA to 200 mA; RL= 100 Ω;
measured at IR= 0.1 × IF; see Fig.7
when switched from I
= 200 mA to 400 mA
F
− 6ns
to IR= 200 mA to 400 mA; RL= 100 Ω;
measured at IR= 0.1 × IF; see Fig.7
reverse recovery time when switched from IF= 10 mA to
1N4151 − 4ns
IR= 10 mA; RL= 100 Ω; measured at
IR= 1 mA; see Fig.7
when switched from I
= 10 mA to
F
− 2ns
IR= 60 mA; RL= 100 Ω; measured at
IR= 1 mA; see Fig.7
forward recovery time when switched to IF= 200 mA; tr= 0.4 ns;
− 10 ns
measured at VF= 1 V; see Fig.8
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-tp
th j-a
thermal resistance from junction to tie-point lead length 10 mm 240 K/W
thermal resistance from junction to ambient lead length 10 mm; note 1 350 K/W
Note
1. Device mounted on a printed circuit-board without metallization pad.
1999 Jun 01 3
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