Philips 1N4446, 1N4148 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

M3D176

1N4148; 1N4448

High-speed diodes

Product specification
Supersedes data of 1996 Sep 03

1999 May 25

Philips Semiconductors Product specification

High-speed diodes 1N4148; 1N4448

FEATURES

• Hermetically sealed leaded glass
SOD27 (DO-35) package

• High switching speed: max. 4 ns

DESCRIPTION

The 1N4148 and 1N4448 are high-speed switching diodes fabricated in planar
technology, and encapsulated in hermetically sealed leaded glass SOD27
(DO-35) packages.

• General application

• Continuous reverse voltage:

max. 75 V

• Repetitive peak reverse voltage:

handbook, halfpage

k

a

max. 75 V

• Repetitive peak forward current:

MAM246

max. 450 mA.

The diodes are type branded.

APPLICATIONS

Fig.1 Simplified outline (SOD27; DO-35) and symbol.

• High-speed switching.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
I

F

I

FRM

I

FSM

RRM
R

repetitive peak reverse voltage − 75 V
continuous reverse voltage − 75 V
continuous forward current see Fig.2; note 1 − 200 mA
repetitive peak forward current − 450 mA
non-repetitive peak forward current square wave; Tj=25°C prior to

surge; see Fig.4

t=1µs − 4A
t=1ms − 1A
t=1s − 0.5 A

P

tot

T

stg

T

j

total power dissipation T

=25°C; note 1 − 500 mW

amb

storage temperature −65 +200 °C
junction temperature − 200 °C

Note

1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.

1999 May 25 2

Philips Semiconductors Product specification

High-speed diodes 1N4148; 1N4448

ELECTRICAL CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

F

I

R

I

R

C

d

t

rr

V

fr

forward voltage see Fig.3

1N4148 I
1N4448 I

=10mA − 1V

F

= 5 mA 0.62 0.72 V

F

= 100 mA − 1V

I

F

reverse current VR= 20 V; see Fig.5 25 nA

V

= 20 V; Tj= 150 °C; see Fig.5 − 50 µA

R

reverse current; 1N4448 VR= 20 V; Tj= 100 °C; see Fig.5 − 3 µA
diode capacitance f = 1 MHz; VR= 0; see Fig.6 4 pF
reverse recovery time when switched from IF= 10 mA to

4ns
IR= 60 mA; RL= 100 Ω;
measured at IR= 1 mA; see Fig.7

forward recovery voltage when switched from IF=50mA;

− 2.5 V

tr=20 ns; see Fig.8

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R
R

th j-tp
th j-a

thermal resistance from junction to tie-point lead length 10 mm 240 K/W
thermal resistance from junction to ambient lead length 10 mm; note 1 350 K/W

Note

1. Device mounted on a printed circuit-board without metallization pad.

1999 May 25 3