Philips 1N4007ID-EB Datasheet

DATA SH EET

Product specification
Supersedes data of April 1992

1996 Jun 10

DISCRETE SEMICONDUCTORS

1N4001ID to 1N4007ID

Rectifiers

ook, halfpage

M3D119

1996 Jun 10 2

Philips Semiconductors Product specification

Rectifiers 1N4001ID to 1N4007ID

FEATURES

• Glass passivated

• High maximum operating

temperature

• Low leakage current

• Excellent stability

• Available in ammo-pack.

DESCRIPTION

Cavity free cylindrical glass package
through Implotec

(1)

technology.

(1) Implotec is a trademark of Philips.

This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.

Fig.1 Simplified outline (SOD81) and symbol.

handbook, 4 columns

ak

MAM123

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

RRM

repetitive peak reverse voltage

1N4001ID − 50 V
1N4002ID − 100 V
1N4003ID − 200 V
1N4004ID − 400 V
1N4005ID − 600 V
1N4006ID − 800 V
1N4007ID − 1000 V

V

R

continuous reverse voltage

1N4001ID − 50 V
1N4002ID − 100 V
1N4003ID − 200 V
1N4004ID − 400 V
1N4005ID − 600 V
1N4006ID − 800 V
1N4007ID − 1000 V

I

F(AV)

average forward current averaged over any 20 ms

period; T

amb

=75°C; see Fig.2

− 1.00 A

averaged over any 20 ms
period; T

amb

= 100 °C; see Fig.2

− 0.75 A

I

FRM

repetitive peak forward current − 10 A

I

FSM

non-repetitive peak forward current half sinewave; 60 Hz − 20 A

T

stg

storage temperature −65 +175 °C

T

j

junction temperature −65 +175 °C