Philips 1N4007G, 1N4006G, 1N4004G Datasheet

DISCRETE SEMICONDUCTORS

DATA SHEET

handbook, 2 columns

M3D116

1N4001G to 1N4007G

Rectifiers

Product specification

1996 May 24

Supersedes data of April 1992

File under Discrete Semiconductors, SC01

Philips Semiconductors	Product specification
Rectifiers	1N4001G to 1N4007G

FEATURES

∙Glass passivated

∙High maximum operating temperature

∙Low leakage current

∙Excellent stability

∙Available in ammo-pack.

LIMITING VALUES

	DESCRIPTION	This package is hermetically sealed
	Rugged glass package, using a high	and fatigue free as coefficients of
		expansion of all used parts are
	temperature alloyed construction.
		matched.
	k	a
		MAM047

Fig.1 Simplified outline (SOD57) and symbol.

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VRRM	repetitive peak reverse voltage
	1N4001G		−	50	V
	1N4002G		−	100	V
	1N4003G		−	200	V
	1N4004G		−	400	V
	1N4005G		−	600	V
	1N4006G		−	800	V
	1N4007G		−	1000	V
VR	continuous reverse voltage
	1N4001G		−	50	V
	1N4002G		−	100	V
	1N4003G		−	200	V
	1N4004G		−	400	V
	1N4005G		−	600	V
	1N4006G		−	800	V
	1N4007G		−	1000	V
IF(AV)	average forward current	averaged over any 20 ms	−	1.00	A
		period; Tamb = 75 °C; see Fig.2
		averaged over any 20 ms	−	0.75	A
		period; Tamb = 100 °C; see Fig.2
IF	continuous forward current	Tamb = 75 °C; see Fig.2	−	1.00	A
IFRM	repetitive peak forward current		−	10	A
IFSM	non-repetitive peak forward current	half sinewave; 60 Hz	−	30	A
Tstg	storage temperature		−65	+175	°C
Tj	junction temperature		−65	+175	°C

1996 May 24

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