Philips 1N4007ID, 1N4006ID, 1N4005ID, 1N4004ID, 1N4002ID Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

ook, halfpage

M3D119

1N4001ID to 1N4007ID

Rectifiers

Product specification
Supersedes data of April 1992
File under Discrete Semiconductors, SC01

1996 Jun 10

Philips Semiconductors Product specification

Rectifiers 1N4001ID to 1N4007ID

FEATURES

• Glass passivated

• High maximum operating

temperature

DESCRIPTION

Cavity free cylindrical glass package
through Implotec

(1) Implotec is a trademark of Philips.

(1)

technology.

This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.

• Low leakage current

• Excellent stability

• Available in ammo-pack.

handbook, 4 columns

ak

MAM123

Fig.1 Simplified outline (SOD81) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

RRM

repetitive peak reverse voltage

1N4001ID − 50 V
1N4002ID − 100 V
1N4003ID − 200 V
1N4004ID − 400 V
1N4005ID − 600 V
1N4006ID − 800 V
1N4007ID − 1000 V

V

R

continuous reverse voltage

1N4001ID − 50 V
1N4002ID − 100 V
1N4003ID − 200 V
1N4004ID − 400 V
1N4005ID − 600 V
1N4006ID − 800 V
1N4007ID − 1000 V

I

F(AV)

I

FRM

I

FSM

T

stg

T

j

average forward current averaged over any 20 ms

period; T

=75°C; see Fig.2

amb

averaged over any 20 ms
period; T

= 100 °C; see Fig.2

amb

repetitive peak forward current − 10 A
non-repetitive peak forward current half sinewave; 60 Hz − 20 A
storage temperature −65 +175 °C

junction temperature −65 +175 °C

− 1.00 A

− 0.75 A

1996 Jun 10 2