1N4003G
Table of contents
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DATA SH EET
Product specification
Supersedes data of April 1992
1996 May 24
DISCRETE SEMICONDUCTORS
1N4001G to 1N4007G
Rectifiers
handbook, 2 columns
M3D116
1996 May 24 2
Philips Semiconductors Product specification
Rectifiers 1N4001G to 1N4007G
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Available in ammo-pack.
DESCRIPTION
Rugged glass package, using a high
temperature alloyed construction.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
Fig.1 Simplified outline (SOD57) and symbol.
2/3 page (Datasheet)
MAM047
ka
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage
1N4001G − 50 V
1N4002G − 100 V
1N4003G − 200 V
1N4004G − 400 V
1N4005G − 600 V
1N4006G − 800 V
1N4007G − 1000 V
V
R
continuous reverse voltage
1N4001G − 50 V
1N4002G − 100 V
1N4003G − 200 V
1N4004G − 400 V
1N4005G − 600 V
1N4006G − 800 V
1N4007G − 1000 V
I
F(AV)
average forward current averaged over any 20 ms
period; T
amb
=75°C; see Fig.2
− 1.00 A
averaged over any 20 ms
period; T
amb
= 100 °C; see Fig.2
− 0.75 A
I
F
continuous forward current
T
amb
=75°C; see Fig.2
− 1.00 A
I
FRM
repetitive peak forward current − 10 A
I
FSM
non-repetitive peak forward current half sinewave; 60 Hz − 30 A
T
stg
storage temperature −65 +175 °C
T
j
junction temperature −65 +175 °C
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