Philips 1N4003G, 1N4002G, 1N4001G Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

handbook, 2 columns

M3D116

1N4001G to 1N4007G

Rectifiers

Product specification
Supersedes data of April 1992

1996 May 24

Philips Semiconductors Product specification

Rectifiers 1N4001G to 1N4007G

FEATURES

• Glass passivated

• High maximum operating

DESCRIPTION

Rugged glass package, using a high
temperature alloyed construction.

This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.

temperature

• Low leakage current

• Excellent stability

• Available in ammo-pack.

ka

2/3 page (Datasheet)

MAM047

Fig.1 Simplified outline (SOD57) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

RRM

repetitive peak reverse voltage

1N4001G − 50 V
1N4002G − 100 V
1N4003G − 200 V
1N4004G − 400 V
1N4005G − 600 V
1N4006G − 800 V
1N4007G − 1000 V

V

R

continuous reverse voltage

1N4001G − 50 V
1N4002G − 100 V
1N4003G − 200 V
1N4004G − 400 V
1N4005G − 600 V
1N4006G − 800 V
1N4007G − 1000 V

I

F(AV)

I

F

I

FRM

I

FSM

T

stg

T

j

average forward current averaged over any 20 ms

period; T

=75°C; see Fig.2

amb

averaged over any 20 ms

continuous forward current

period; T
T

=75°C; see Fig.2

amb

= 100 °C; see Fig.2

amb

repetitive peak forward current − 10 A
non-repetitive peak forward current half sinewave; 60 Hz − 30 A
storage temperature −65 +175 °C

junction temperature −65 +175 °C

− 1.00 A

− 0.75 A

− 1.00 A

1996 May 24 2