PARADIGM PDM31098SA20SOITY, PDM31098SA20SOTR, PDM31098SA20SOTY, PDM31098SA8SOTR, PDM31098SA8SOTY Datasheet

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PARADIGM PDM31098SA20SOITY, PDM31098SA20SOTR, PDM31098SA20SOTY, PDM31098SA8SOTR, PDM31098SA8SOTY Datasheet

PRELIMINARY

PDM31098

Features

High-speed access times Com’l: 8, 10 12, 15, and 20 ns Ind’l.: 12, 15, 20 ns

Low power operation (typical)

-PDM31098SA Active: 300 mW

Standby: 25 mW

Single +3.3V (±0.3V) power supply TTL-compatible inputs and outputs Packages

Plastic SOJ (400 mil) - SO

4 Megabit 3.3V Static RAM

1Mx 4-Bit

Description

The PDM31098 is a high-performance CMOS static RAMs organized as 1,048,576 x 4 bits. Writing is accomplished when the write enable (WE) and chip enable CE inputs are both LOW. Reading is accomplished when WE remains HIGH and OE and CE are both LOW.

The PDM31098 operates from a single +3.3V power supply and all the inputs and outputs are fully TTLcompatible.

The PDM31098 is available in a 32-pin 400-mil plastic SOJ package.

Functional Block Diagram

 

A 0

Decoder

 

Memory

 

 

 

 

 

 

 

 

 

 

 

Addresses

 

Matrix

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

A19

 

 

 

 

 

I/O0

 

 

 

• •

 

Input

 

Column I/O

 

 

 

 

 

 

 

 

Data

 

 

 

 

 

 

Control

 

 

 

 

 

 

 

 

 

 

 

 

I/O7

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CE

 

 

 

 

 

 

WE

 

 

 

 

 

 

 

OE

 

 

 

 

 

 

 

1

2

3

4

5

6

7

8

9

10

11

12

Rev. 1.3 - 5/27/98

1

 

 

 

 

 

 

 

 

 

 

 

PRELIMINARY

PDM31098

 

 

 

 

 

SOJ

 

 

 

 

 

Pin Configuration

 

 

A0

1

 

32

A19

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

A1

2

 

31

A18

 

 

 

 

 

 

 

 

 

Name

Description

 

 

 

A2

3

 

30

A17

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

A3

4

 

29

A16

 

 

 

 

 

 

 

 

 

 

A19-A0

Address Inputs

 

 

 

A4

5

 

28

A15

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

6

 

27

 

 

 

 

I/O3-I/O0

Data Inputs/Outputs

 

 

 

 

 

 

 

OE

 

 

 

 

CE

 

 

 

I/O0

7

 

26

I/O3

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Output Enable Input

 

Vcc

8

 

25

Vss

 

 

OE

 

 

 

 

 

 

 

 

 

 

 

 

Vss

9

 

24

Vcc

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Write Enable Input

 

 

 

WE

I/O1

10

 

23

I/O2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Chip Enable Inputs

 

 

11

 

 

A14

 

 

CE

 

 

 

WE

 

22

 

 

 

 

 

 

 

 

A5

12

 

21

A13

 

 

 

 

 

 

 

 

 

 

NC

No Connect

 

 

 

A6

13

 

20

A12

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

A7

14

 

19

A11

 

 

VCC

Power (+3.3V)

 

 

 

A8

15

 

18

A10

 

 

 

 

 

 

 

 

VSS

Ground

 

 

 

A9

16

 

17

NC

 

 

 

Truth Table(1)

 

 

 

 

 

 

 

 

 

 

 

 

OE

 

 

WE

 

 

CE

 

I/O

MODE

 

 

 

 

 

 

 

 

 

 

 

 

X

 

 

X

 

 

H

 

Hi-Z

Standby

 

 

 

 

 

 

 

 

 

 

 

 

X

 

 

X

 

 

X

 

Hi-Z

Standby

 

 

 

 

 

 

 

 

 

 

 

 

L

 

 

H

 

 

L

 

DOUT

Read

 

X

 

 

L

 

 

L

 

DIN

Write

 

H

 

 

H

 

 

L

 

Hi-Z

Output Disable

 

 

 

 

 

 

 

 

 

 

 

NOTE: 1. H = VIH, L = VIL, X = DON’T CARE

Absolute Maximum Ratings (1)

Symbol

Rating

Com’l.

Ind.

Unit

 

 

 

 

 

VTERM

Terminal Voltage with Respect to VSS

–0.5 to +4.6

–0.5 to +4.6

V

TBIAS

Temperature Under Bias

–55 to +125

–65 to +135

°C

TSTG

Storage Temperature

–55 to +125

–65 to +150

°C

PT

Power Dissipation

1.0

1.0

W

IOUT

DC Output Current

50

50

mA

T

Maximum Junction Temperature (2)

125

145

°C

j

 

 

 

 

 

 

 

 

 

NOTE: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device.This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

2.Appropriate thermal calculations should be performed in all cases and specifically for

those where the chosen package has a large thermal resistance (e.g., TSOP). The cal-

culation should be of the form: Tj = Ta + P * θja where Ta is the ambient temperature, P is average operating power and θja the thermal resistance of the package. For this product, use the following θja value:

SOJ: 59o C/W TSOP : 90o C/W

2

Rev. 1.3 -5/27/98

 

 

 

 

 

 

 

 

 

 

PRELIMINARY

 

 

 

 

 

 

 

 

 

 

PDM31098

 

DC Electrical Characteristics (VCC = 3.3V, ± 0.3V)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Symbol

 

 

 

Parameter

 

Test Conditions

 

 

 

Min.

 

Max.

 

Unit

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ILI

 

 

 

Input Leakage Current

 

VCC = Max., VIN = VSS to VCC

 

 

–5

 

5

 

 

A

 

 

ILO

 

 

 

Output Leakage Current

 

VCC = Max.,

 

 

 

 

 

–5

 

5

 

 

A

 

 

 

 

 

 

 

 

 

 

CE

= VIH

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VOUT = VSS to VCC

 

 

 

 

 

 

 

 

 

 

 

 

 

VIL

 

 

 

Input Low Voltage

 

 

 

 

 

 

 

 

 

 

 

–0.3(1)

 

0.8

 

 

V

 

 

VIH

 

 

 

Input High Voltage

 

 

 

 

 

 

 

 

 

 

 

2.2

 

 

Vcc+0.3

 

V

 

 

VOL

 

 

 

Output Low Voltage

 

IOL = 8 mA, VCC = Min.

 

 

 

 

0.4

 

 

 

V

 

 

VOH

 

 

 

Output High Voltage

 

IOH = –4 mA, VCC = Min.

 

 

 

2.4

 

 

 

 

V

 

 

NOTE:1.VIL(min) = –3.0V for pulse width less than 20 ns

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Power Supply Characteristics

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

-8

-10

 

-12

 

-15

 

-20

 

 

 

 

 

Symbol

 

Parameter

 

Com’l

Com’l

 

Com’l

 

Ind.

Com’l

Ind.

 

Com’l

 

Ind.

Unit

 

 

ICC

 

Operating Current

190

175

 

165

 

175

155

 

165

 

145

 

155

mA

 

 

 

 

CE

 

= VIL

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

f = fMAX = 1/tRC

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VCC = Max.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IOUT = 0 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ISB

 

Standby Current

50

45

 

40

 

45

35

 

40

 

30

 

35

 

mA

 

 

 

 

CE

 

= VIH

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

f = fMAX = 1/tRC

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VCC = Max.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ISB1

 

Full Standby Current

10

10

 

10

 

10

10

 

15

 

10

 

15

 

mA

 

 

 

 

 

CE

VCC – 0.2V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

f = 0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VCC = Max.,

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VIN VCC – 0.2V or 0.2V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SHADED AREA = PRELIMINARY DATA

NOTES: All values are maximum guaranteed values.

Capacitance(1) (T = +25°C, f = 1.0 MHz)

 

 

 

A

 

 

Symbol

Parameter

Max.

Unit

 

 

 

 

CIN

Input Capacitance

8

pF

COUT

Output Capacitance

8

pF

NOTE:1. This parameter is determined by device characterization but is not production tested.

Rev. 1.3 - 5/27/98

3

1

2

3

4

5

6

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