查询L-314EIR1BC供应商
PL- IRM0101- 3 RECEIVER MODULE
B-2
1.All dimension are in millimeters(inches).
2.Tolerance is
0.25mm(0.01")unless otherwise specified.
PARAMETER
Test Conditions
ABSOLUTE MAXIMUN RATING:(Ta=25ºC)
Symbol
Value Unit
Supply Voltage
Output Voltage
Output Current
Junction Temperature
Storage Temperature Range
Operating Temperature Range
Power Consumption
Soldering Temperature
-
-
-
-
-
-
-
t
10s,1mm from case
Vcc
Vout
lo
Ti
Tstg
Totr
Ptot
Tsd
4.5~5.5
4.5~5.5
5
100
-25ºC to 85ºC
-25ºC to 85ºC
50
260
V
V
mA
ºC
ºC
ºC
mw
ºC
ELECTRO-OPTICAL CHARACTERISTICS:(Ta=25ºC)
Supply Current
Max. Input Current
Max. Voltage Gain
Frequency Range
Output Pulse Width
Low Level
Output Voltage
Hight Level
Output Voltage
Arrival Distance
Iin=0 uA
Vin=0 V
-
-
-
L-514EIR1C
If=300 mA
Symbol
Min
Typ
lcc
lin
Av
f
tPW1
tPW2
Vol
Voh
d
0.9
-
50
500
500
-
4.5
-
1.2
1.0
52
38.0
600
600
0.20
35
Max
1.5
-
53
700
700
0.25
5.5
-
Unit
mA
mA
dB
KHz
us
us
V
V
m
Fin=37.9 KHz
Vin=30 uVp-p
AGC off
Fin=37.9 KHz burst wave
Vin=500 uVp-p
Fin=37.9 KHz burst wave
Vin=50 uVp-p
Parameter
Conditions
PL - IRM0204-A538 RECEIVER MODULE
1.All dimension are in millimeters(inches).
2.Tolerance is
0.25mm(0.01")unless otherwise specified.
B-3
PARAMETER
Test Conditions
ABSOLUTE MAXIMUN RATING:(Ta=25ºC)
Symbol
Value Unit
Supply Voltage
Output Voltage
Output Current
Junction Temperature
Storage Temperature Range
Operating Temperature Range
Power Consumption
Soldering Temperature
-
-
-
-
-
-
-
t
10s,1mm from case
Vcc
Vout
lo
Ti
Tstg
Totr
Ptot
Tsd
4.5~5.5
4.5~5.5
5
100
-25ºC to 85ºC
-25ºC to 85ºC
50
260
V
V
mA
ºC
ºC
ºC
mw
ºC
ELECTRO-OPTICAL CHARACTERISTICS:(Ta=25ºC)
Supply Current
Max. Input Current
Max. Voltage Gain
Frequency Range
Low Level
Output Voltage
Hight Level
Output Voltage
Arrival Distance
Iin=0 uA
-
-
-
L-514EIR1C
I
=300 mA
Symbol
Min
Typ
lcc
lin(max)
Av
f
tPW1
tPW2
Vol
Voh
d
0.9
-
50
500
500
-
4.5
-
1.2
1
52
38.0
600
600
0.20
35
Max
1.5
-
53
700
700
0.25
5.5
-
Unit
mA
mA
dB
KHz
us
us
V
V
m
Fin=37.9 KHz
Vin=30 uVp-p
AGC off
Fin=37.9 KHz burst wave
Vin=500 uVp-p
Fin=37.9 KHz burst wave
Vin=50 uVp-p
Parameter
Conditions
Output Pulse Width
Vin 0V ; Vs=5V
Tamb=25
ºC
PL - IRM0206-A538 RECEIVER MODULE
1.All dimension are in millimeters(inches).
2.Tolerance is
0.25mm(0.01")unless otherwise specified.
B-4
ABSOLUTE MAXIMUN RATING:(Ta=25ºC)
PARAMETER
Test Conditions
Symbol
Value Unit
Supply Voltage
Output Voltage
Output Current
Junction Temperature
Storage Temperature Range
Operating Temperature Range
Power Consumption
Soldering Temperature
-
-
-
-
-
-
-
t
10s,1mm from case
Vcc
Vout
lo
Ti
Tstg
Totr
Ptot
Tsd
4.5~5.5
4.5~5.5
5
100
-25ºC to 85ºC
-25ºC to 85ºC
50
260
V
V
mA
ºC
ºC
ºC
mw
ºC
ELECTRO-OPTICAL CHARACTERISTICS:(Ta=25ºC)
Supply Current
Max. Input Current
Max. Voltage Gain
Frequency Range
Low Level
Output Voltage
Hight Level
Output Voltage
Arrival Distance
Iin=0 uA
-
-
-
L-514EIR1C
I
=300 mA
Symbol
Min
Typ
lcc
lin(max)
Av
f
tPW1
tPW2
Vol
Voh
d
0.9
-
50
500
500
-
4.5
-
1.2
1
52
38.0
600
600
0.20
35
Max
1.5
-
53
700
700
0.25
5.5
-
Unit
mA
mA
dB
KHz
us
us
V
V
m
Fin=37.9 KHz
Vin=30 uVp-p
AGC off
Fin=37.9 KHz burst wave
Vin=500 uVp-p
Fin=37.9 KHz burst wave
Vin=50 uVp-p
Parameter
Conditions
Output Pulse Width
Vin 0V ; Vs=5V
Tamb=25
B-5
PL - IRM0208-A538 RECEIVER MODULE
1.All dimension are in millimeters(inches).
2.Tolerance is
0.25mm(0.01")unless otherwise specified.
ABSOLUTE MAXIMUN RATING:(Ta=25ºC)
PARAMETER
Test Conditions
Symbol
Value Unit
Supply Voltage
Output Voltage
Output Current
Junction Temperature
Storage Temperature Range
Operating Temperature Range
Power Consumption
Soldering Temperature
-
-
-
-
-
-
-
t
10s,1mm from case
Vcc
Vout
lo
Ti
Tstg
Totr
Ptot
Tsd
4.5~5.5
4.5~5.5
5
100
-25ºC to 85ºC
-25ºC to 85ºC
50
260
V
V
mA
ºC
ºC
ºC
mw
ºC
ELECTRO-OPTICAL CHARACTERISTICS:(Ta=25ºC)
Supply Current
Max. Input Current
Max. Voltage Gain
Frequency Range
Low Level
Output Voltage
Hight Level
Output Voltage
Arrival Distance
Iin=0 uA
-
-
-
L-514EIR1C
I
=300 mA
Symbol
Min
Typ
lcc
lin(max)
Av
f
tPW1
tPW2
Vol
Voh
d
0.9
-
50
500
500
-
4.5
-
1.2
1
52
38.0
600
600
0.20
35
Max
1.5
-
53
700
700
0.25
5.5
-
Unit
mA
mA
dB
KHz
us
us
V
V
m
Fin=37.9 KHz
Vin=30 uVp-p
AGC off
Fin=37.9 KHz burst wave
Vin=500 uVp-p
Fin=37.9 KHz burst wave
Vin=50 uVp-p
Parameter
Conditions
Output Pulse Width
Vin 0V ; Vs=5V
Tamb=25
B-6
L-31ROPT1XX 3.0mm PHOTOTRANSISTOR
L-31ROPT1XX
D1,D2=BLACK
1.All dimension are in millimeters (inches).
2.Tolerance is
0.25 mm (0.01") unless otherwise specified.
Part No.
P
D (mw)
ABSOLUTE MAXIMUN RATING:(Ta=25ºC)
V
(BR)R (V)
Topr Tstg
PARAMETER
Power Dissipation
Reverse break down
voltage
Operating Temperature
Range
Storage Temperature
Range
10 5
-35ºC to 85ºC
-35ºC to 85ºC
Lead Soldering Temperature {1.6mm(0.063 inch)From Body}250ºC 5ºC For 3 Seconds
ELECTRO-OPTICAL CHARACTERISTICS:(Ta=25ºC)
Part No.
BV
CEO (V)
BVECO (V)
I
CEO (nA) VCE(s) (V)
tR/t
F
(uS)
lC (mA)
CCB (pF)
(nm)
MIN
TYPMAX
MIN TYPMAX
MIN TYPMAX
MIN TYPMAX
MIN TYPMAX
MIN TYPMAX
MIN TYPMAX
MIN
PEAK
MAX
TEST
CONDITION
I
C=100uA
Ee=0mW/cm
2
IE=100uA
Ee=0mW/cm
2
VE=20V
Ee=0mW/cm
2
IC=2mA
Ee=0.5mW/cm
2
VCE=5V
I
C=1mA
RL=1000
f=1MHZ
VCB=3V
Ee=0mW/cm
2
PARAMETER
COLLECTOR
DARK
CURRENT
RISE/FALL
TIME
SPECTRAL
SENSITIVITY
WAVELENGTH
L-31ROPT1C
30
5
100
0.4
15/15
0.9
1.8 6.4
400
1050
L-31ROPT1D1
30
5
100
0.4
15/15
0.8
1.6 6.4
900
940
L-31ROPT1D2
30
5
100
0.4
15/15
0.8
1.6 6.4
800
870
VCE=5V
Ee=0.1mW/cm
2
COLLECTOR
-BASE
CAPACITANCE
ON STATE
COLLECTOR
CURRENT
COLLECTOR-
EMITTER
SATURATION
VOLTAGE
EMITTER-
COLLECTOR
BREAKDOWN
VOLTAGE
COLLECTOR-
EMITTER
BREAKDOWN
VOLTAGE
L-32XOPT1XX 3.0mm PHOTOTRANSISTOR
L-32XOPT1XX
D1,D2=BLACK
1.All dimension are in millimeters(inches).
2.Tolerance is
0.25mm(0.01")unless otherwise specified.
Part No.
P
D (mw)
ABSOLUTE MAXIMUN RATING:(Ta=25ºC)
V
(BR)R (V)
Topr Tstg
PARAMETER
Power Dissipation
Reverse Voltage
Operating Temperature
Range
Storage Temperature
Range
10 5
-35ºC to 85ºC
-35ºC to 85ºC
Lead Soldering Temperature {1.6mm(0.063 inch)From Body}250ºC
5ºC For 3 Seconds
ELECTRO-OPTICAL CHARACTERISTICS:(Ta=25ºC)
Part No.
BV
CEO (V)
BVECO (V)
I
CEO (nA) VCE (s)(V)
tR/t
F
(uS)
lC (mA)
(nm)
MIN
TYP MAX
TEST
CONDITION
PARAMETER
L-32ROPT1D1
30
5
100
0.4
15/15
0.2
0.6
900
940
MIN TYP MAX
MIN TYP MAX
MIN TYP MAX MIN TYP MAX
MIN TYP MAX
MIN TYP MAX
L-32AOPT1D1
30
5
100
0.4
15/15
0.6
1.0
900
940
B-7
IC=100uA
Ee=0mW/cm
2
IE=100uA
Ee=0mW/cm
2
VE=20V
Ee=0mW/cm
2
IC=2mA
Ee=0.5mW/cm
2
VCE=5V
I
C=1mA
RL=1000
VCE=5V
Ee=0.1mW/cm
2
COLLECTOR
DARK
CURRENT
RISE/FALL
TIME
SPECTRAL
SENSITIVITY
WAVELENGTH
ON STATE
COLLECTOR
CURRENT
COLLECTOR-
EMITTER
SATURATION
VOLTAGE
EMITTER-
COLLECTOR
BREAKDOWN
VOLTAGE
COLLECTOR-
EMITTER
BREAKDOWN
VOLTAGE
B-8
L-51ROPT1XX 5.0mm PHOTOTRANSISTOR
L-51ROPT1XX
D1,D2=BLACK
1.All dimension are in millimeters (inches).
2.Tolerance is
0.25 mm (0.01") unless otherwise specified.
Part No.
P
D (mw)
ABSOLUTE MAXIMUN RATING:(Ta=25ºC)
V
(BR)R (V)
Topr Tstg
PARAMETER
Power Dissipation
Reverse break down
voltage
Operating Temperature
Range
Storage Temperature
Range
10 5
-35ºC to 85ºC
-35ºC to 85ºC
Lead Soldering Temperature {1.6mm(0.063 inch)From Body}250ºC
5ºC For 3 Seconds
ELECTRO-OPTICAL CHARACTERISTICS:(Ta=25ºC)
Part No.
BV
CEO (V)
BVECO (V)
I
CEO (nA) VCE(s) (V)
tR/t
F
(uS)
lC (mA)
CCB (pF)
(nm)
MIN
TYPMAX
MIN TYPMAX
MIN TYPMAX
MIN TYPMAX
MIN TYPMAX
MIN TYPMAX
MIN TYPMAX
MIN
PEAK
MAX
TEST
CONDITION
PARAMETER
L-51ROPT1C
30
5
100
0.4
15/15
1.8
2.4 6.4
400
1050
L-51ROPT1D1
30
5
100
0.4
15/15
1.7
2.2 6.4
900
940
L-51ROPT1D2
30
5
100
0.4
15/15
1.7
2.2 6.4
800
870
IC=100uA
Ee=0mW/cm
2
IE=100uA
Ee=0mW/cm
2
VE=20V
Ee=0mW/cm
2
IC=2mA
Ee=0.5mW/cm
2
VCE=5V
I
C=1mA
RL=1000
f=1MHZ
VCB=3V
Ee=0mW/cm
2
COLLECTOR
DARK
CURRENT
RISE/FALL
TIME
SPECTRAL
SENSITIVITY
WAVELENGTH
VCE=5V
Ee=0.1mW/cm
2
COLLECTOR
-BASE
CAPACITANCE
ON STATE
COLLECTOR
CURRENT
COLLECTOR-
EMITTER
SATURATION
VOLTAGE
EMITTER-
COLLECTOR
BREAKDOWN
VOLTAGE
COLLECTOR-
EMITTER
BREAKDOWN
VOLTAGE
B-9
L-SB1R9PD1XX PHOTODIODE
L-SB1R9PD1XX
D1,D2=BLACK
1.All dimension are in millimeters (inches).
2.Tolerance is
0.25 mm (0.01") unless otherwise specified.
Part No.
P
D (mw)
ABSOLUTE MAXIMUN RATING:(Ta=25ºC)
V
(BR)R (V)
Topr Tstg
PARAMETER
Power Dissipation
Reverse Voltage
Operating Temperature
Range
Storage Temperature
Range
0.1 30
-35ºC to 85ºC
-35ºC to 85ºC
Lead Soldering Temperature {1.6mm(0.063 inch)From Body}250ºC
5ºC For 3 Seconds
ELECTRO-OPTICAL CHARACTERISTICS:(Ta=25ºC)
Part No.
I
D (nA)
V(BR) R (V)
V
OC (mV) IL (uA)
tON/tOFF (nS)
CT (pF)
(nm)
MIN
TYP MAX
TEST
CONDITION
V
R=10V
Ee=0mW/cm
2
IR=100uA
Ee=0mW/cm
2
=940nm
Ee=0.5mW/cm
2
VR=5V
Ee=0.1mW/cm
2
VR=10V
RL=100
f=1MHZ
VR=5V
Ee=0mW/cm
2
PARAMETER
REVERSE
DARK
CURRENT
REVERSE
BREAKDOWN
VOLTAGE
OPEN
CIRCUIT
VOLTAGE
LIGHTE
CURRENT
TURN-ON
TURN-OFF
TIME
TOTAL
CAPACITANCE
SPECTRAL
SENSITIVITY
WAVELENGTH
L-SB1R9PD1C
5
30
33
170
390
30
40
45/45
18
400
1050
MIN TYP MAX
MIN TYP MAX
MIN TYP MAX MIN TYP MAX
MIN TYP MAX
MIN
PEAK
MAX
L-SB1R9PD1D1
5
30
33
170
390
30
40
45/45
18
900
940
L-SB1R9PD1D2
5
30
33
170
390
30
40
45/45
18
800
870
B-10
L-SC1R9PD1XX PHOTODIODE
L-SC1R9PD1XX
D1,D2=BLACK
1.All dimension are in millimeters (inches).
2.Tolerance is
0.25 mm (0.01") unless otherwise specified.
Part No.
P
D (mw)
ABSOLUTE MAXIMUN RATING:(Ta=25ºC)
V
(BR)R (V)
Topr Tstg
PARAMETER
Power Dissipation
Reverse Voltage
Operating Temperature
Range
Storage Temperature
Range
0.1 30
-35ºC to 85ºC
-35ºC to 85ºC
Lead Soldering Temperature {1.6mm(0.063 inch)From Body}250ºC
5ºC For 3 Seconds
ELECTRO-OPTICAL CHARACTERISTICS:(Ta=25ºC)
Part No.
I
D (nA)
V(BR) R (V)
V
OC (mV) IL (uA)
tON/tOFF (nS)
CT (pF)
(nm)
MIN
TYP MAX
TEST
CONDITION
V
R=10V
Ee=0mW/cm
2
IR=100uA
Ee=0mW/cm
2
=940nm
Ee=0.5mW/cm
2
VR=5V
Ee=0.1mW/cm
2
VR=10V
RL=100
f=1MHZ
VR=5V
Ee=0mW/cm
2
PARAMETER
REVERSE
DARK
CURRENT
REVERSE
BREAKDOWN
VOLTAGE
OPEN
CIRCUIT
VOLTAGE
LIGHT
CURRENT
TURN-ON
TURN-OFF
TIME
TOTAL
CAPACITANCE
SPECTRAL
SENSITIVITY
WAVELENGTH
L-SC1R9PD1C
5
30
33
170
390
30
40
45/45
18
400
1050
MIN TYP MAX
MIN TYP MAX
MIN TYP MAX MIN TYP MAX
MIN TYP MAX
MIN
PEAK
MAX
L-SC1R9PD1D1
5
30
33
170
390
30
40
45/45
18
900
940
L-SC1R9PD1D2
5
30
33
170
390
30
40
45/45
18
800
870
B-11
L-31XXIR1XX 3.0mm INFRARED EMITTING DIODE
L-31XXIR1XX
BC=BLUE CLEAR
1.All dimension are in millimeters (inches).
2.Tolerance is
0.25 mm (0.01") unless otherwise specified.
Part No.
P
D (mw)
ABSOLUTE MAXIMUN RATING:(Ta=25ºC)
V
R (V)
Topr Tstg
PARAMETER
Power Dissipation
Reverse Voltage
Operating Temperature
Range
Storage Temperature
Range
100 5
-35ºC to 85ºC
-35ºC to 85ºC
Lead Soldering Temperature {1.6mm(0.063 inch)From Body}250ºC
5ºC For 3 Seconds
ELECTRO-OPTICAL CHARACTERISTICS:(Ta=25ºC)
Part No.
V
F (V)
IR ( A)
2
1/2 (dge)
le (mw/sr)
p (nm)
MIN TYP MAX
MIN TYP MAX
MIN TYP MAX
MIN TYP MAX MIN TYP MAX
L-314EIR1C
1.6
10
940 20
7
14
1.2
1.4
L-315EIR1C
1.6
10
940 25 6
12
1.2
1.4
L-316EIR1C
1.6
10
940 30 6
12
1.2
1.4
L-314EIR1BC
1.6
10
940 20 5
10
1.2
1.4
L-315EIR1BC
1.6
10
940 25 6
12
1.2
1.4
L-316EIR1BC
1.6
10
940 30 6
12
1.2
1.4
L-318EIR1BC
1.6
10
940 40 6
10
1.2
1.4
TEST
CONDITION
I
F=20mA
I
F=100mA
V
R=5V
I
F=20mAIF=20mAIF=20mA
B-12
L-32XXIRXX 3.0mm INFRARED EMITTING DIODE
L-32XXIRXX
BC=BLUE CLEAR
1.All dimension are in millimeters (inches).
2.Tolerance is
0.25 mm (0.01") unless otherwise specified.
Part No.
P
D (mw)
ABSOLUTE MAXIMUN RATING:(Ta=25ºC)
V
R (V)
Topr Tstg
PARAMETER
Power Dissipation
Reverse Voltage
Operating Temperature
Range
Storage Temperature
Range
100 5
-35ºC to 85ºC
-35ºC to 85ºC
Lead Soldering Temperature {1.6mm(0.063 inch)From Body}250ºC
5ºC For 3 Seconds
ELECTRO-OPTICAL CHARACTERISTICS:(Ta=25ºC)
Part No.
V
F (V)
IR ( A)
2
1/2 (dge)
le (mw/sr)
p (nm)
MIN TYP MAX
MIN TYP MAX
MIN TYP MAX
MIN TYP MAX MIN TYP MAX
L-327EIR1C
-
1.6
-
-
10
-
940
-
35
7.5
15
-
-
1.2
1.4
L-327EIR1BC
-
1.6
-
-
10
-
940
-
35 7.5
15
-
-
1.2
1.4
L-32AEIR1C
-
1.6
-
-
10
-
940
-
50 6
10
-
-
1.2
1.4
TEST
CONDITION
I
F=20mA
I
F=100mA
V
R=5V
I
F=20mAIF=20mAIF=20mA
B-13
L-51XXIR1C 5.0mm INFRARED EMITTING DIODE
L-51XXIR1C
1.All dimension are in millimeters (inches).
2.Tolerance is
0.25 mm (0.01") unless otherwise specified.
Part No.
P
D (mw)
ABSOLUTE MAXIMUN RATING:(Ta=25ºC)
V
R (V)
Topr Tstg
PARAMETER
Power Dissipation
Reverse Voltage
Operating Temperature
Range
Storage Temperature
Range
100 5
-35ºC to 85ºC
-35ºC to 85ºC
Lead Soldering Temperature {1.6mm(0.063 inch)From Body}250ºC
5ºC For 3 Seconds
ELECTRO-OPTICAL CHARACTERISTICS:(Ta=25ºC)
Part No.
V
F (V)
IR ( A)
2
1/2 (dge)
le (mw/sr)
p (nm)
MIN TYP MAX
MIN TYP MAX
MIN TYP MAX
MIN TYP MAX MIN TYP MAX
L-514EIR1C
1.6
10
940 20 17
30
1.2
1.4
L-515EIR1C
1.6
10
940 25 14
25
1.2
1.4
L-516EIR1C
1.6
10
940 30 12
23
1.2
1.4
L-517EIR1C
1.6
10
940 35 10
20
1.2
1.4
L-518EIR1C
1.6
10
940 40 8
18
1.2
1.4
L-51AEIR1C
1.6
10
940 50 6
12
1.2
1.4
L-514CIR1C
1.8
10
940 20 13
25
1.3
1.6
TEST
CONDITION
I
F=20mA
I
F=100mA
V
R=5V
I
F=20mAIF=20mAIF=20mA
B-14
L-51XXIR1BC 5.0mm INFRARED EMITTING DIODE
L-51XXIR1BC
BC=BLUE CLEAR
1.All dimension are in millimeters (inches).
2.Tolerance is
0.25 mm (0.01") unless otherwise specified.
Part No.
P
D (mw)
ABSOLUTE MAXIMUN RATING:(Ta=25ºC)
V
R (V)
Topr Tstg
PARAMETER
Power Dissipation
Reverse Voltage
Operating Temperature
Range
Storage Temperature
Range
100 5
-35ºC to 85ºC
-35ºC to 85ºC
Lead Soldering Temperature {1.6mm(0.063 inch)From Body}250ºC
5ºC For 3 Seconds
ELECTRO-OPTICAL CHARACTERISTICS:(Ta=25ºC)
Part No.
V
F (V)
IR ( A)
2
1/2 (dge)
le (mw/sr)
p (nm)
MIN TYP MAX
MIN TYP MAX
MIN TYP MAX
MIN TYP MAX MIN TYP MAX
L-514EIR1BC
16
10
940 20 17
30
1.2
1.4
L-515EIR1BC
1.6
10
940 25 14
25
1.2
1.4
L-516EIR1BC
1.6
10
940 30 12
23
1.2
1.4
L-517EIR1BC
1.6
10
940 35 10
20
1.2
1.4
L-518EIR1BC
1.6
10
940 40 8
18
1.2
1.4
L-51AEIR1BC
1.6
10
940 50 6
12
1.2
1.4
L-514CIR1BC
1.8
10
940 20 13
25
1.3
1.6
TEST
CONDITION
I
F=20mA
I
F=100mA
V
R=5V
I
F=20mAIF=20mAIF=20mA
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