PANJIT US1D, US1J, US1B, US1K, US1G Datasheet
...
SURFACE MOUNT ULTRAFAST RECTIFIERVOLTAGE - 50 to 800 Volts CURRENT - 1.0 Amper
e
FEATURE
S
l For surface mounted applications
Built-in strain relie
f
Ultrafast recovery times for high efficienc
y
Flammability Classification 94V-
O
l
High temperature soldering: 26
0¢J/10 seconds at terminal
s
MECHANICAL DATA
Case: JEDEC DO-214AC molded plastic
Method 2026
Standard packaging: 12mm tape (EIA-481)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTIC
S
SYMBOLSUS1AUS1BUS1DUS1GUS1JUS1KUNIT
S
RRM
Volts
RMS
Volts
D
C
Volts
at
TL=10
0
¢J
(AV
)
s
wave superimposed on rated load(JEDEC method)
TA=55
¢J
FSM
s
Maximum Instantaneous Forward Voltage at 1.0A
VF1.01.41.7Volt
s
¢J
At Rated DC Blocking Voltage
TA=10
0¢JIR10.0100
£g
R
R
S
J17P
R£KJ
L
/
W
STG
2. Measured at 1 MHz and Applied reverse voltage of 4.0 volts
SMA/DO-214A
C
l
Low profile package
l
l
Easy pick and place
l
l
Plastic package has Underwriters Laboratory
Glass passivated junction
l
US1A THRU US1K
Terminals: Solder plated, solderable per MIL-STD-750,
Polarity: Indicated by cathode band
Weight: 0.002 ounce, 0.064 gram
Ratings at 25¢J ambient temperature unless otherwise specified.
Resistive or inductive load. For capacitive load, derate current by 20%.
Maximum Recurrent Peak Reverse Voltage V
Maximum RMS Voltage V
Maximum DC Blocking Voltage V
Maximum Average Forward Rectified Current,
Peak Forward Surge Current 8.3ms single half sine-
I
I
50 100 200 400 600 800
35 70 140 280 420 560
50 100 200 400 600 800
Maximum DC Reverse Current TA=25
Maximum Reverse Recovery Time (Note 1) TJ=25
¢J
T
Typical Junction capacitance (Note 2) C
Maximum Thermal Resistance (Note 3)
Operating and Storage Temperature Range TJ,T
1.0 Amp
30.0 Amp
50.0 100.0
30
-50 to +150
A
n
F
¢J
¢J
NOTES:
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, Irr=0.25A
3. 8.0mm2 (.013mm thick) land areas
RATING AND CHARACTERISTIC CUR VES
t
r
r
Fig. 1-REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRA
M
10
1.0
0.1
.01
0
2 .
4
6 .8
1.0 1.2 1.
4
1.0 25
50
75 10
0
1
25
1
50
175
1
00
10.
1
1
10
10
0
TJ = 25
30
252015
Fig. 4-TYPICAL JUNCTION CAPACITANCEFig. 5-PEAK FORWARD SURGE CURREN
T
A
US1A THRU US1K
+0.5A
0
-0.25
NOTE:1.Rise Time = 7ns max.
Input Impedance = 1 megohm. 22pF
2.Rise Time = 10ns max.
Source Impedance = 50 Ohms
US1A
.
TJ = 25 ¢J
US1K
TYPICAL
IFM, Apk
US1G
.
Fig. 2-FORWARD CHARACTERISTICS Fig. 3-FORWARD CURRENT DERATING CURVE
-1.0
SET TIME
BASE FOR
50 ns/cm
2.0
SINGLE PHASE HALF WAVE
RESISTIVE OR INDUCTIVE
P.C.B MOUNTED ON
0.315×0.315"(8.0×8.0mm)
PAD AREAS
AMPERES
VERAGE FORWARD CURRENT,
LEAD TEMPERATURE,
1cm
¢J
10
¢J
f = 1.0MHz
Vsig = 50m Vp-p
8.3ms SINGLE HALF SINE WAVE
JEDEC METHOD
AMPERES
10
5
JUNCTION CAPACITANCE, pF
REVERSE VOLTAGE, VOLTS
PEAK FORWARD SURGE CURRENT,
1 2
5 10 20
50 100
NUMBER OF CYCLES AT 60Hz
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