PANJIT UF1B, UF1D, UF1K, UF1G, UF1A Datasheet
...
UF1A THRU UF1K
SURFACE MOUNT ULTRAFAST RECTIFIERVOLTAGE - 50 to 800 Volts CURRENT - 1.0 Amper
e
FEATURE
S
Low profile package
Ultrafast recovery times for high efficienc
y
Glass passivated junction
l
MECHANICAL DATA
Method 2026
Weight: 0.003 ounce, 0.093 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTIC
S
Ratings at 25¢J ambient temperature unless otherwise specified
.
For capacitive load, derate current by 20%.
SYMBOLSUF1AUF1BUF1DUF1GUF1JUF1KUNIT
S
Maximum Recurrent Peak Reverse VoltageV
RRM
50100200400600800
Volts
RMS
Volts
D
C
Volts
(AV
)
s
FSM
s
F
Maximum DC Reverse Current
TA=25
R
A
¢J
R
R
J
P
STG
NOTES
:
2. Measured at 1 MHz and Applied reverse voltage of 4.0 volts
SMB/DO-214A
A
l For surface mounted applications
l
l
Built-in strain relief
l Easy pick and place
l
l
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
l
High temperature soldering:
260 ¢J/10 seconds at terminals
Case: JEDEC DO-214AA molded plastic
Terminals: Solder plated, solderable per MIL-STD-750,
Polarity: Indicated by cathode band
Standard packaging: 12mm tape (EIA-481)
Resistive or inductive load.
Maximum RMS Voltage V
Maximum DC Blocking Voltage V
Maximum Average Forward Rectified Current,
I
at TL=100 ¢J
Peak Forward Surge Current 8.3ms single half sine-
I
wave superimposed on rated load(JEDEC method)
TA=55 ¢J
Maximum Instantaneous Forward Voltage at 1.0A V
¢J
At Rated DC Blocking Voltage TA=100 ¢J
Maximum Reverse Recovery Time (Note 1) TJ=25
T
Typical Junction capacitance (Note 2) C
Maximum Thermal Resistance (Note 3)
R £KJL
Operating and Storage Temperature Range TJ,T
35 70 140 280 420 560
50 100 200 400 600 800
1.0 Amp
30.0 Amp
1.0 1.4 1.7 Volts
I
10.0
£g
100
50.0 100.0
17.0
30
-50 to +150
nS
F
¢J/W
¢J
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, Irr=0.25A
3. 8.0mm2 (.013mm thick) land areas
RATING AND CHARACTERISTIC CURVES
t
r
r
Fig. 1-REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRA
M
10
1.0
0.1
.01
0
2 .
4
6 .8
1.0 1.2 1.
4
1
00
10.
1
1
10
10
0
TJ = 25
25
50
75 10
0
1
25
1
50
175
SINGLE PHASE HALF WAV
E
0.315×0.315"(8.0×8.0mm)PAD AREA
S
30
25
10
P
UF1A THRU UF1K
+0.5A
0
-0.25
NOTE:1.Rise Time = 7ns max.
Input Impedance = 1 megohm. 22pF
2.Rise Time = 10ns max.
Source Impedance = 50 Ohms
UF1A
.
TJ = 25 ¢J
UF1K
TYPICAL
IFM, ApkAVERAGE FORWARD
UF1G
.
Fig. 2-FORWARD CHARACTERISTICS Fig. 3- TYPICAL JUNCTION CAPACITANCE
-1.0
SET TIME
BASE FOR
50 ns/cm
10
AMPERES
PEAK FORWARD SURGE CURRENT,
1cm
¢J
f = 1.0MHz
Vsig = 50m Vp-p
REVERSE VOLTAGE, VOLTS
2.0
RESISTIVE OR INDUCTIVE
P.C.B MOUNTED ON
1.0
CURRENT AMPERES
LEAD TEMPERATURE,
20
15
AMPERES
5
EAK FORWARD SURGE CURRENT,
1 2
¢J
NUMBER OF CYCLES AT 60Hz
8.3ms SINGLE HALF SINE WAVE
JEDEC METHOD
5 10 20
50 100
Fig. 4- FORWARD CURRENT DERATING CURVE Fig. 5-PEAK FORWARD SURGE CURRENT
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