查询TSP058SB供应商
PRELIMINARY
TSP058SB - TSP320SB
SURF ACE MOUNT BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR DEVICE
FEATURES
• Protects by limiting voltages and shunting surge currents away from sensitive circuits
• Designed for telecommunications applications such as line cards, modems, PBX, FAX,
LAN,VHDSL
• Helps meet standards such as GR1089, ITU K.20, IEC950, UL1459&50, FCC part 68
• Low capacitance, High surge (A, B, C rating available), precise voltage limiting, Long life
SUMMARY ELECTRICAL CHARACTERISTICS
evititepeR detaR
etatS-ffO kaeP
egatloV
reb m u N tra P
B S 850 P S T 85 77 5 5 008 051 07 001 42 92
B S 560 P S T5 68 85 5 0 080 517 60 92 28 2
B S 570 P S T 57 89 5 5 008 051 76 87 32 72
B S 090 P S T0 90 3155 0 080 517 51 69 11 2
B S 021 P S T 021 061 5 5 008 051 05 85 71 02
B S 041 P S T0 410 8155 0 080 519 44 56 19 1
B S 061 P S T 061 022 5 5 008 051 64 35 51 81
B S 091 P S T0 910 6255 0 080 515 43 54 18 1
B S 022 P S T 022 003 5 5 008 051 44 25 31 81
B S 572 P S T5 720 5355 0 080 514 41 53 18 1
B S 023 P S T 023 004 5 5 008 051 34 05 31 71
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.xa M .xa M .xa M .xa M .xa M .niM .pyT .xa M .pyT .xa M
VDRM VBO I @ BO VT A 1 @ IDRM I BO IH CO V 0 @
V V V
revokaerB
egatloV
etatS-n O
egatloV
evititepeR
etatS-ffO kaeP
tnerru C
µA
revokaerB
tnerru C
A m A m Fp Fp
SMB/DO-214AA
g nidlo H
tenrru C
cd
CO V 05 @
ecnaticapa C etatS-ffO
V m 51 = caV ,z H M 1 =f( RMS )
THYRISTOR
cd
TSP058SB - TSP320SB
NOTES:
1. Specific V
2. Specific IH values are available by request.
3. All ratings and characteristics are at 25 °C unless otherwise specified.
4. V
applies for the life of the device. I
DRM
5. V
is at 100V/msec, ISC =10Apk, VOC=1KVpk, 10/1000 Waveform
BO1
6. V
is at f = 60 Hz, ISC = 1 A
BO2
Ver: June 2001
values are available by request.
DRM
, Vac = 1KV
(RMS)
will be in spec during and following operation of the device.
DRM
, RL = 1 KΩ , 1/2 AC cycle
(RMS)
PAGE 1
PRELIMINARY
TSP058SB - TSP320SB
SELECTION GUIDE
Follow these steps to select the proper Thyristor surge protector for your application:
1. Define the operating parameters for the circuit:
• Ambient operating temperature range
• Maximum telephone line operating current (highest battery and shortest copper loop)
• Maximum operating voltage: (Maximum DC bias + peak ringing voltage)
• Maximum surge current
• System voltage damage threshold
• Select device with an off-state voltage rating (V
3. Select surge current ratings (I
4. Verify that the minimum holding current of the device at the maximum ambient temperature is above the maximum dc current of the
system.
5. Verify that the maximum breakover voltage of the device is below the system damage threshold.
6. Verify that the circuit's ambient operating temperatures are within the device's operating temperature range.
7. Verify that the device's dimensions fit the application's space considerations.
8. Independently evaluate and test the suitability and performance of the device in the application
PPS
and I
) ≥ those which the application must withstand.
TSM
) above the maximum operating voltage at the minimum operating temperature.
DRM
THYRISTOR
MAXIMUM SURGE RATINGS (TJ = 25 ºC UNLESS OTHERWISE NOTED)
g nita R tnerru C eslu P kae P evititepe R-n o N
lob m y S I
eva W tnerru C tiucriC-trohS0 1/2 µ s0 2/8 µ s0 61/01 µ s0 13/5 µ s0 65/01 µ s0 001/01 µ s
eva W egatloVtiucriC-nep O 01/2 µ s 05/2.1 µ s 061/01 µ s 007/01 µ s 065/01 µ s 0001/01 µ s
eulaV
setoN )6,5,4,2,1( )4,3,2,1(
Notes:
1. Thermal accumulation between successive surge tests is
not allowed.
2. The device under test initially must be in thermal
equilibrium with TJ = 25 °C.
3. Test at 1 cycle, 60 Hz.
4. Surge ratings are non-repetitive because instantaneous
junction temperatures may exceed the maximum rated TJ.
Nevertheless, devices will survive many surge applications
without degradation. Surge capability will not degrade over
a device's typical operating life.
5. Adjust the surge generator for optimum current-wave
accuracy when both voltage and current wave
specifications cannot be exactly met. The current wave is
more important than the voltage wave for accurate surge
evaluation.
6. The waveform is defined as A/B ms where:
A: (Virtual front time) = 1.25 X Rise time = 1.25 X (Tb - Ta)
B (Duration time to 50% level of Ipps) = T1 - T
A 003A 522A 051A 511A 001A 08
0
PPS
% Ipps
100%
80%
60%
40%
20%
0%
Tb Ta T1 To
Time
I
TSP058SB - TSP320SB
kae P evititepe R-no N
tnerru C egru S etatS-n O
TSM
A 0 3
Ver: June 2001
PAGE 2
PRELIMINARY
TSP058SB - TSP320SB
MAXIMUM THERMAL RATINGS
g nita R lob m y S eulaV
Notes:
PCB board mounted on minimum foot print.
egna R erutarep m eT noitcnuJ egarotS TSTG 051 ot05-
egna R erutarep m eT noitcnuJ gnitarep OT
egna R erutarep m eTtneib m A gnitarep O Ta 56 ot04-
J 051 ot04-
tin U
O
C
O
C
O
C
THERMAL CHARACTERISTICS
citsiretcarah C lob m y S eulaV tin U
T sdaeL otnoitcnuJ ecnatsiseR la mrehT
L
Notes:
The junction to lead thermal resistance represents a minimum limiting value with both leads soldered to a large near-infinite heatsink. The
junction to ambient thermal resistance depends strongly on board mounting conditions and typically is 3 to 6 times higher than the junction
to lead resistance. The data shown is to be used as guideline values for preliminary engineering.
ottnecajda batno
.sezis daplacitnediotderedlos sdaelhtoB .citsalp
R
θ LJ
02.xa M
O
W / C
THYRISTOR
TSP058SB - TSP320SB
ELECTRICAL CHARACTERISTICS (TC = 25°C UNLESS OTHERWISE NOTED)
srete m ara P sn oitid no C tseT lob m y S .niM .xa M tin U
kae P evititepe R
1tnerru C gnidlo H0 001/01 µ I,mrofeva w s
egatloV etatS-n O I
Notes:
Specific IH values are available by request.
tnerru C etatS-ffO
tnerru C revokaerB I,zH 06 =f
D V detar=
V
T
DRM
SC
V ,s mrA 1 = ca R ,s mrV K 1 =
CS V ,A01 = CO R ,V 26 =
003 = w T ,A 1 = µ eslup 1 ,s VT 5 V
L
K 1 = Ω elcyc C A 2/1, I OB 008 A m
L
004 = Ω IH 051A m
I
DRM
5
µ A
Ver: June 2001
PAGE 3
PRELIMINARY
TSP058SB - TSP320SB
+I
IPPS
ITSM
IT
IBO
IH
IBR
_
V
VT
_
I
citsiretcarah C lob m yS eulaV
V
IDRM
BO
I
BO
H
I
egatloVrevokaerB
tnerru C revokaerB V(egatlovrevokaerb ehtta gniwolftnerruc suoenatnatsnI
tnerru C gnidloH etats-no ehtniecived ehtniatnia m otderiuqertnerruc m u miniM
VDRM
VBR
VBO
+V
THYRISTOR
TSP058SB - TSP320SB
esirfo etartnerruc dna egatlov deificeps arednu
derusae m nwodkaerbtaro niecived ehtssorca egatlov m u mixa M
BO
)
I
T
V
V
DRM
I
DRM
I
PPS
Ver: June 2001
T
td/idt nerruc etats-nofo esirfo etarlacitirC
td/vd egatloV etatS-ffO fo esiRfo etaRlacitirC
tnerruc etats-n O noitidnoc etats-no ehtniecived ehthguorhttnerru C
egatlov etats-n O
egatloV etatS-ffO kaeP evititepeR detaR
tnerru C etatS-ffO kaeP evititepeR
tnerruc eslup kaeP evititepeR-noN
Vfo
DRM
T
)
(tnerrucI
segatlov
tsetrednu
deificeps ata noitidnoc etats-no ehtniecived ehtssorca egatloV
lla gnidulcni,egatlov etats-ffo ehtfo eulav suoenatnatsnitsehgih ehT
tneisnartevititepernonlla gnidulcxetub segatlovtneisnartevititeper
noitacilppa eht m orfstlusertahttnerrucfo eulav)kaep( m u mixa m ehT
edutilp m a deificepsfotnerruc eslup mikaepfo eulav m u mixa m deta R
ecived ehtotega m adtuohtiw deilppa ebya m tahtepahsevaw dna
.ega m adtuohtiw
V w oleb(egatlovfo esirfo etar m u mixa m ehT
DRM
.etats-no ehtotetats-ffo eht m orfgnihctiws
dnatshtiw nac ecived ehttahttnerrucfo esirfo etarehtfo eulav detaR
esuactonlliw taht)
PAGE 4
PRELIMINARY
TSP058SB - TSP320SB
CAPACITANCE CHARACTERISTICS
F = 1 MHz, Vac = 15 mV
rms
reb m u N traP
B S 850 P S T 07 001 95 47 35 86 54 95 42 92
B S 560 P S T7 60 98 59 62 53 63 46 52 28 2
B S 570 P S T 76 87 65 46 94 85 24 94 32 72
B S 090 P S T7 51 68 40 52 46 45 38 39 11 2
B S 021 P S T 05 85 24 54 83 05 13 33 71 02
B S 041 P S T9 44 50 43 46 33 40 32 36 19 1
B S 061 P S T 64 35 83 04 43 63 82 03 51 81
B S 091 P S T5 43 58 39 33 35 38 20 34 18 1
B S 022 P S T 44 25 73 93 23 53 72 03 31 81
B S 572 P S T4 41 57 39 32 34 37 29 23 18 1
B S 023 P S T 34 05 73 83 23 43 72 92 31 71
MECHANICAL DATA
C
O
F p
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.pyT .xa M .pyT .xa M .pyT .xa M .pyT .xa M .pyT .xa M
ecnaticapa C etatS-ffO
THYRISTOR
TSP058SB - TSP320SB
• Case: JEDEC DO-214AA molded plastic
• Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
• Polarity: Bi-directional Standard packaging: 12mm tape
(EIA-481)
• Weight: 0.003 ounce, 0.093 gram
SMB / DO-214AA
.083 (2.11)
.075 (1.91)
.096 (2.44)
.083 (2.13)
.050 (1.27)
.030 (0.76)
.185 (4.70)
.160 (4.06)
.220 (5.59)
.200 (5.08)
.008(.203)
.002(.051)
Unit: inch ( mm )
.155 (3.94)
.130 (3.30)
.012 (.305)
.006 (.152)
Ver: June 2001
PAGE 5
PRELIMINARY
TSP058SB - TSP320SB
DEVICE MARKING CODE
reb m u N traP ed o C g nikra M
B S 850 P S T B 850
B S 560 P S TB 560
B S 570 P S T B 570
B S 090 P S TB 090
B S 021 P S T B 021
B S 041 P S TB 041
B S 061 P S T B 061
B S 091 P S TB 091
B S 022 P S T B 022
B S 572 P S TB 572
B S 023 P S T B 023
ORDER & PACKING INFORMATION
ecive D g nikca P yt'Q redrO .niM s A redrO kra m e R
leeR & epaT "31s cp 000,3B SxxxP STg nikcaP dradnatS
B SxxxP S T
leeR & epaT "7 scp 005 7-B SxxxP ST
PJ YM
058C
1st Line:
PJ-
YM-
2nd line:
PanJit logo
Last digit of calendar year
Month
Marking code
THYRISTOR
TSP058SB - TSP320SB
Ver: June 2001
PAGE 6
PRELIMINARY
TSP058SB - TSP320SB
RATING AND CHARACTERISTIC CURVES
90
80
Cseriesdevice
70
60
50
Capacitance (pF)
40
30
20
50 100 150 200 250 300 350
f=1 MHZ
Bseriesdevice
V =0VoltsDC
D
Aseriesdevice
V (V)
DRM
v =15mV AC
dR M S
O
T=25 C
J
TYPICAL CAPACITANCE V.S. RATED REPETITIVE OFF-STATE VOLTAGE
100
10
TSP220SC
m
1
Capacitance (pF)
70
60
50
40
30
20
10
0.1
f=1 MHZ
TSP075SC
TSP120SC
1
V Off-state Voltage (V)
D
v =15mV AC
dR M S
10 100
T=25 C
J
TSP140SC
TSP190SC
O
TYPICAL CAPACITANCE V.S. OFF-STATE VOLTAGE
THYRISTOR
TSP058SB - TSP320SB
0.1
0.01
D,
I Off-State Current ( A)
0.001
0.0001
0 20 40 60 80 100 120 140
TSP220SB
T(C)
TSP220SB
150
O
J
TYPICAL OFF-STATE CURRENT V.S JUNCTION TEMPERATURE
IMPORTANT NOTICE
This information is intended to unambiguously characterize the product in order to facilitate the customer's evaluation of the device in the
application. It will help the customer's technical experts determine that the device is compatible and interchangeable with similar devices
made by other vendors. The information in this data sheet is believed to be reliable and accurate. The specifications and information
herein are subject to change without notice. New products and improvements in products and their characterization are constantly in
process. This provides a superior performing and the highest value product. The factory should be consulted for the most recent informa-
tion and for any special characteristics not described or specified.
© Copyright PanjIt International Inc. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may changed without notice. No liability will be
accepted by the publisher for any consequence of its use.
Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
PanJit Internatioal Inc.
http://www.panjit.com.tw email: sales@panjit.com.tw
Ver: June 2001
PAGE 7