PANJIT S1A, S1D, S1B, S1J, S1G Datasheet

S1A THRU S1M

SURFACE MOUNT RECTIFIERVOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Ampere

FEATURE

S

High temperature metallurgically bonded-n

o

Glass passivated junction

Plastic package has Underwriters Laboratory

MECHANICAL DATA

Terminals: Solder plated, solderable per MIL-STD-750,

Standard packaging: 12mm tape (EIA-481)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTIC

S

Single phase, half wave, 60 Hz, resistive or inductive load

.

SYMBOLSS1AS1BS1DS1GS1JS1KS1MUNITS

RRM

Volts

Maximum RMS Voltage

V

RMS

3570140280420560700

Volts

Maximum DC Blocking Voltage

V

D

C

501002004006008001000

Volts

(AV

)

s

Peak Forward Surge Current 8.3ms single half sine

-

I

FSM

30.0Amp

s

F

R

R

R

Typical Junction capacitance (Note 2)

CJ1

2PF

STG

2. Measured at 1 MHz and Applied Vr=4.0 volts

SMB/DO-214A

A

l For surface mounted applications

l

compression contacts as found in other
diode-constructed rectifiers

l
l

Built-in strain relief

l Easy pick and place

l

Flammability Classification 94V-O
l Complete device submersible temperature of

260¢Jfor 10 seconds in solder bath

Case: JEDEC DO-214AA molded plastic

Method 2026
Polarity: Indicated by cathode band

Weight: 0.003 ounce, 0.093 gram

Ratings at 25 ¢J ambient temperature unless otherwise specified.

For capacitive load, derate current by 20%.
Maximum Recurrent Peak Reverse Voltage V

Maximum Average Forward Rectified Current,

I

at TL=100 ¢J

wave superimposed on rated load(JEDEC method)
Maximum Instantaneous Forward Voltage at 1.0A V
Maximum DC Reverse Current TA=25 ¢J

I
At Rated DC Blocking Voltage TA=125 ¢J
Maximum Reverse Recovery Time (Note 1) T

50 100 200 400 600 800 1000

1.0 Amp

1.10 Volts

5.0
50

2.5

£g A

£g S

Typical Thermal Resistance (Note 3)

R £KJL

Operating and Storage Temperature Range TJ,T

30.0

-55 to +150

¢J/W

¢J

NOTES:

1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, Irr=0.25A

3. 8.0mm2 (.013mm thick) land areas

RATING AND CHARACTERISTIC CURVES

1.0 25

50

75 10

0

1

25

1

50

175

RESISTIVE OR INDUCTIV

E

0.315 ×0.315"(8.0 ×

1510 51

2

5 10 2

0

50 100

Fig. 1-FORWARD CURRENT DERATINGCURVEFig. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGECURRENT

0 20 40

60 80 100 120 140 1,00 10

0.

1

Fig. 3-TYPICAL REVERSE CHARACTERISTICSFig. 4-TYPICAL INSTANTANEOUS FORWARDCHARACTERISTICS

10005002001

00

105210.0

1

0.1

1

1

0

100

100 50

20

10

5

1

PE

T

S1A THRU S1M

2.0

SINGLE PHASE HALF WAVE

P.C.B MOUNTED ON

COPPER PAD AREAS

AVERAGE FORWARD

CURRENT, AMPERES

LEAD TEMPERATURE,

¢J

TJ = 125

1

TJ = 75 ¢J

TJ = 25¢J

MICROAMPERES

0.01

INSTANTANEOUS REVERSE CURRENT,

0.001

PERCENT OF PEAK REVERSE VOLTAGE, %

¢J

30

25

20

8.3ms SINGLE HALF SINE WAVE
JEDEC METHOD

AMPERES

AK FORWARD SURGE CURRENT,

NUMBER OF CYCLES AT 60Hz

100
50

20
10

5.0

2.0

1.0

0.5

0.2

MICROAMPERES

0.1
.05

.02

INSTANTANEOUS FORWARD CURRENT,

.01

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

INSTANTANEOUS FORWARD VOLTAGE, VOLTS

UNITS MOUNTED ON
20in2 (5.4mm2) + 0.5mil in (0.013mm)
THICK COPPER LAND AREAS

50

20

¢J

TJ = 25
f = 1.0MHz
Vsig = 50mVp-p

CAPACITANCE, pF

HERMAL IMPEDANCE(¢J/W)

REVERSE VOLTAGE, VOLTS

2

.1 .2 .4 1.0 2 10 20 40 100

REVERSE VOLTAGE, VOLTS

200 400 1000

Fig. 5-TRANSIENT THERMAL IMPEDANCE Fig. 6-TYPICAL JUNCTION CAPACITANCE