Panjit MMBT4401 Schematic

MMBT4401

NPN GENERAL PURPOSE SWITCHING TRANSISTOR

VOLTAGE

40 Volts

POWER

225 mWatts

FEATURES

• NPN epitaxial silicon, planar design

• Collector-emitter voltage VCE = 40V

• Collector current IC = 600mA

• Lead free in comply with EU RoHS 2011/65/EU directives

• Green molding compound as per IEC61249 Std. .

(Halogen Free)

MECHANICAL DATA

• Case: SOT-23, Plastic

• Terminals: Solderable per MIL-STD-750, Method 2026

• Approx. Weight: 0.008 gram

• Marking: M4A

0.056(1.40)

0.047(1.20)

0.079(2.00)

0.070(1.80)

0.004(0.10)

0.000(0.00)

0.120(3.04)

0.110(2.80)

0.006(0.15)MIN.

0.008(0.20)

0.003(0.08)

0.044(1.10)

0.035(0.90)

0.020(0.50)

0.013(0.35)

ABSOLUTE RATINGS

egatloVrettimE-rotcelloC V

egatloVesaB-rotcelloC V

egatloVesaB-rettimE V

suounitnoC-tnerruCrotcelloC I

THERMAL CHARACTERISTICS

)1etoN(noitapissiDrewoPxaM P

erutarepmeTnoitcnuJ T

erutarepmeTegarotS IT

RETEMARAPlobmySeulaVstinU

CEO

CBO

EBO

C

04V

06V

0.6V

006Am

RETEMARAPlobmySeulaVstinU

tneibmAotnoitcnuJ,ecnatsiseRlamrehT Rθ

TOT

JA

J

STG

522Wm

655

051ot55-

O

W/C

O

C

O

C

Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in.

March 4,2013-REV.02

PAGE . 1

MMBT4401

ELECTRICAL CHARACTERISTICS

RETEMARAPlobmySnoitidnoCtseT.NIM.PYT.XAMstinU

egatloVnwodkaerBrettimE-rotcelloCV

egatloVnwodkaerBesaB-rotcelloCV

egatloVnwodkaerBesaB-rettimEV

tnerruCffotuCesaBI

tnerruCffotuCrotcelloCI

(BR)

BL

CEX

OECICI,Am0.1=

OBCICI,Au001=

OBEIEI,Au001=

V

B

0=04--V

E

0=06--V

C

0=0.6--V

EC

V,V53=

BE

V4.0=--001An

EC

V,V53=

BE

V4.0=--001An

)2etoN(niaGtnerruCCDh

egatloVnoitarutaSrettimE-rotcelloC

)2etoN(

egatloVnoitarutaSrettimE-esaB

)2etoN(

V

ecnaticapaCesaB-rotcelloCC

ecnaticapaCesaB-rettimEC

tcudorPhtdiwdnaB-niaGtnerruCF

emiTyaleDdt

emiTesiRrt

emiTegarotSst

emiTllaFft

EF

CE(SAT)

BE(SAT)

CBO

EBO

T

I

C

I

C C

I I

C

I

C

I

C

I

C

I

C

I

C

V

V I

C

V I

C

V I

B

V I

B

V,Am1.0=

EC

V0.1=

V,Am0.1=

EC

V,Am01=

BC

I,V5=

E

BC

EC

I,V01=

CC

V,V03=

I,Am051=

CC

V,V03=

I,Am051=

CC

I,V03=

C

I=1

B

CC

I,V03=

C

I=1

B

V0.1=

EC

V0.1=

V,Am051=

EC

V0.1=

V,Am005=

EC

V0.2=

I,Am051=

B

Am51=

I,Am005=

B

Am05=

I,Am051=

B

Am51=

I,Am005=

B

Am05=

zHM1=f,0=--5.6Fp

I,V5.0=

C

EB 1B

zHM1=f,0=--03Fp

zHM001=f,Am02=052--zHM

,V0.2=

Am51=

,V0.2=

Am51=

Am051=

Am51=2

Am051=

Am51=2

02 04 08

001

04

--

57.0

-

--51sn

--02sn

-- 522sn

--03sn

-

003

-

04.0

57.0

59.0

02.1

V

March 4,2013-REV.02

PAGE . 2

MMBT4401

1.1

1

0.9

0.8

0.7

0.6

Saturation Voltage (V)

0.5

0.4

0.3

(sat), Base−Emitter

BE

V

TJ= 25°C

1 10 100 1000

TJ= 75°C

TJ= 125°C

IC/IB= 10

IC, Collector Current (mA)

Fig.1 Base Emitter Saturation Voltage vs. Collector Current

0.45

0.4

IC/IB= 10

0.35

0.3

0.25

0.2

0.15

0.1

(sat), Collector−Emitter

Saturation Voltage (V)

0.05

CE

V

0

1 10 100 1000

TJ= 125°C

TJ= 75°C

TJ= 25°C

IC, Collector Current (mA)

1

0.9

0.8

0.7

0.6

0.5

Voltage (V)

(on), Base−Emitter

V

0.4

BE

0.3

0.2

TJ= 25°C

0.1 1 10 100

TJ= 75°C

VCE= 5V

TJ= 125°C

IC, Collector Current (mA)

Fig.2 Base Emitter Voltage vs. Collector Current

1000

100

TJ= 25°C

10

, DC Current Gain

FE

h

1

0.1 1 10 100 1000

TJ= 75°C

TJ= 125°C

VCE= 1 V

IC, Collector Current (A)

Fig.3 Collector Emitter Saturation Voltage vs. Collector Current

100

C

ib

10

1

Cob(CB)

TA= 25°C

(BE)

C, Capacitance (pF)

0.1

0.1 1 10 100

VR, Reverse Voltage (V)

Fig.5 Typical Capacitance

Fig.4 DC Current Gain vs. Collector Current

March 4,2013-REV.02

PAGE . 3

Panjit MMBT4401 Schematic [ru]