MMBT2907A
PNP GENERAL PURPOSE SWITCHING TRANSISTOR
VOLTAGE
60 Volts
POWER
FEATURES
PNP epitaxial silicon, planar design
Collector-emitter voltage VCE = -60V
Collector current IC = -600mA
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*UHHQPROGLQJFRPSRXQGDVSHU,(&6WG+DORJHQ)UHH
MECHANICAL DATA
Case: SOT-23
Terminals : Solderable per MIL-STD-750,Method 2026
Approx Weight: RXQFHV0.008 grams
Device Marking : M7A
225 mWDWWV
0.0 56( 1. 40)
0.0 47( 1. 20)
0.006( 0.15)M IN.
ABSOLUTE MAXIMUM RATINGS
egatloVrettimE-rotcelloC
egatloVesaB-rotcelloC
egatloVesaB-rettimE
suounitnoC-tnerruCrotcelloC
THERMAL CHATACTERISTICS
Top View
Collector
1
Base
3
2
Emitter
1
BASE
3
COLLECTOR
2
EMITTER
retemaraP lobmyS eulaV stinU
V
ECO
V
OBC
V
OBE
I
C
06- V
06-
0.5-
006- Am
V
V
retemaraP lobmyS
)1etoN(noitapissiDrewoPxaM
erutarepmeTegarotS
eruarepmeTnoitcnuJ
tneibmAotnoitcnuJ,ecnatsiseRlamrehT
Note 1 : Transistor mouted on FR-4 board 70 x 60 x 1mm.
STAD-JUN.29.2005
eulaV stinU
P
OTT
T
GTS
T
J
R
Θ AJ
522 Wm
051ot55-
051ot55-
655
O
O
C
O
C
W/C
PAGE . 1
MMBT2907A
ELECTRICAL CHARACTERISTICS (T
retemaraP lobmyS noitidnoCtseT .niM .pyT .xaM stinU
egatloVnwodkaerBrettimE-rotcelloC
egatloVnwodkaerBesaB-rotcelloC
egatloVnwodkaerBesaB-rettimE
tnerruCffotuCesaB
tnerruCffotuCrotcelloC
niaGtnerruCCD
egatloVnoitarutaSrettimE-rotcelloC
egatloVnoitarutaSrettimE-esaB
=25OC, unless otherwise noted)
J
V
OEC
)RB(
V
OBC
)RB(
V
OBE
)RB(
I
LB
I
XEC
I
OBC
h
EF
V
)TAS(EC
V
)TAS(EB
V
V
I
C
I
C
I
C
I
C
I
C
I
C
I
C
I
C
I
C
I
I,Am01-=
C
0= 06- - - V
B
IC01-= µ I,AE0= 06- - - V
IE01-= µ I,AC0= 0.5- - - V
V,V03-=
EC
EC
V
EC
V
EC
T
J
V5.0-= - - 05- An
BE
V,V03-=
V5.0-= - - 05- An
BE
I,V05-=
0= - - 01- An
E
I,V05-=
0=
V,Am1.0-=
V,Am0.1-=
V,Am01-=
521=OC
V,Am051-=
V,Am005-=
I,Am051-=
B
I,Am005-=
B
I,Am051-=
B
I,Am005-=
B
E
V01-=
EC
V01-=
EC
V01-=
EC
V01-=
EC
V01-=
EC
Am51-=
Am05-=
Am51-=
Am05-=
- - 01-
57
001
001
001
05
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
003
-
4.0-
6.1-
3.1-
6.2-
µA
-
V
V
ecnaticapaCesaB-rotcelloC
ecnaticapaCesaB-rettimE
tcudorPhtdiwdnaB-niaGtnerruC
emiTnO-nruT
emiTyaleD
emiTesiR
emiTffO-nruT
emiTegarotS
emiTllaF
C
OBC
C
OBE
F
T
t
no
t
d
t
r
t
ffo
t
s
t
f
V
VBCI,V2-=
I
C
V
I
C
V
I
C
V
I
C
VCCI,V6-=
VCCI,V6-=
VCCI,V6-=
I,V01-=
BC
C
CC
CC
CC
I
1BI=2B
I
1BI=2B
I
1BI=2B
zHM1=f,0= - - 0.8 Fp
E
zHM1=f,0= - - 03 Fp
V,Am05-=
,V02-=
EC
zHM001=f
V,V03-=
,V5.0-=
EB
I,Am051-=
Am51-=
B
V,V03-=
,V5.0-=
EB
I,Am051-=
Am51-=
B
V,V03-=
,V5.0-=
EB
I,Am051-=
Am51-=
1B
,Am051-=
C
Am51-=
,Am051-=
C
Am51-=
,Am051-=
C
Am51-=
002 - - zHM
- - 54 sn
- - 01 sn
- - 04 sn
- - 001 sn
- - 08 sn
- - 03 sn
STAD-JUN.21.2005
PAGE . 2
I,COLLECTOR CURRENT (mA)
C
I ,COLLECTOR CURRENT (mA)
C
Fig.2-Collector Saturation Region
MMBT2907A
3.0
2.0
VCE=-1.0V
VCE=-10V
25 C
1.0
0.7
0.5
0.3
FE
h , NORMALIZED CUTTENT GAIN
0.2
-0.1 -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500
I , COLLECTOR CURRENT (mA)
C
Fig.1-DC Cuttent Gain
O
T =125 C
J
O
-55 C
O
-1.0
-0.8
I =-1.0mA
C
-500mA-100mA-10mA
-0.6
-0.4
VOLTAGE (VOLTS)
-0.2
CE
V , COLLECTOR-EMITTER
0
-0.005 -0.01 -0.02 -0.03 -0.07 -0.1 -0.2 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50
-0.05
-0.3 -0.5
I , BASE CUTTENT (mA)
B
Fig.2-Collector Saturation Region
300
200
100
70
t
r
V =-30V
CC
I/I=10
CB
O
T=25 C
J
50
30
20
t, TIME (ns)
10
7.0
5.0
3.0
-5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500
td@V =0V
BE(OFF)
I , COLLECTOR CURRENT
C
2.0V
500
300
200
100
t
f
V =-30V
CC
I/I=10
CB
II
B1= B2
O
T=25 C
J
70
50
30
t, TIME (ns)
20
,
t =t -1/8t
ss f
10
7.0
5.0
-5.0 -7.0 -10 -20 -30 -50-70 -100 -200-300 -500
I ,COLLECTOR CURRENT (mA)
C
Fig.3-Turn-On Time Fig.4-Turn-Off Time
STAD-JUN.29.2005
PAGE . 3