PANJIT ES1B, ES1D, ES1C, ES1E, ES1J Datasheet
...
ES1A THRU ES1J
FEATURE
S
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTIC
S
SYMBOLSES1AES1BES1CES1DES1EES1GES1JUNIT
S
RRM
50100150200300400600Volts
RMS
3570105140210280420Volt
s
D
C
50100150200300400600Volts
(AV
)
s
FSM
s
F
R
R
R
J
P
W
STG
SMA/DO-214A
C
SURFACE MOUNT SUPERFA ST RECTIFIER
VOLTAGE - 50 to 600 Volts CURRENT - 1.0 Ampere
l
For surface mounted applications
l
Low profile package
l
Built-in strain relief
l
Easy pick and place
l
Superfast recovery times for high efficiency
l
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
l
Glass passivated junction
l
High temperature soldering:
260¢J/10 seconds at terminals
Case: JEDEC DO-214AC molded plastic
Terminals: Solder plated, solderable per
MIL-STD-750, Method 2026
Polarity: Indicated by cathode band
Standard packaging: 12mm tape (EIA-481)
Weight: 0.002 ounce, 0.064 gram
Ratings at 25¢J ambient temperature unless otherwise specified.
Single phase, half wave 60Hz resistive or inductive load.
For capacitive load, derate current by 20%.
Maximum Recurrent Peak Reverse Voltage V
Maximum RMS Voltage V
Maximum DC Blocking Voltage V
Maximum Average Forward Rectified Current,
I
1.0 Amp
at TL=120 ¢J
Peak Forward Surge Current 8.3ms single half sine-
I
30.0 Amp
wave superimposed on rated load(JEDEC method)
Maximum Instantaneous Forward Voltage at 1.0A V
Maximum DC Reverse Current TA=25
¢J
At Rated DC Blocking Voltage TA=100 ¢J
Maximum Reverse Recovery Time (Note 1) T
Typical Junction capacitance (Note 2) C
I
0.95 1.25 1.7 Volts
5.0
£g
100
35.0 nS
10.0
Typical Thermal Resistance (Note 3) R £KJL 35 ¢J/
Operating and Storage Temperature Range TJ,T
-50 to +150 ¢J
NOTES:
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, Irr=0.25A
2. Measured at 1 MHz and Applied reverse voltage of 4.0 volts
3. 8.0mm2 (.013mm thick) land areas
A
F
RATING AND CHARACTERISTIC CURVES
NOTE:1.Rise Time = 7ns max. Input Impedance = 1 megohm. 22pF 2.Rise Time = 10ns max. Source Impedance = 50 Ohms
r
r
SET TIME
1c
m
BASE FOR 50 ns/c
m
SINGLE PHASE HALF WAVERESISTIVE OR INDUCTIVEP.C.B MOUNTED ON0.315×0.315"(8.0×8.0mm)PAD AREA
S
¢J
TJ = 25
% OF PIV. VOLTS
ES1
A
TJ = 25
INSTANTANEOUS FORWARD VOLTAGE VOLTS
NUMBER OF CYCLES AT 60Hz
TJ = 25
¢Jf = 1.0MHzVsig = 50mVp-p REVERSE VOLTAGE, VOLTS
I
PE
ES1A THRU ES1J
t
+0.5A
0
-0.25
-1.0
2.0
1.0
CURRENT AMPERES
AVERAGE FORWARD
25
LEAD TEMPERATURE,
50
75 100
125
150
175
Fig. 1-REVERSE RECOVERY TIME CHARACTERISTIC AND
TEST CIRCUIT DIAGRAM
1000
100
10
1
R-REVERSE LEAKAGE CURRENT, MICROAMPERES
0.1
20 40 60 80 100 120
TJ = 125
TJ = 75¢J
¢J
¢J
Fig. 2-MAXIMUM AVERAGE FORWARD
CURRENT RATING
10
1
ES1E
ES1J
¢J
0.6 0.8 1.0 1.2 1.4
INSTANTANEOUS FORWARD CURRENT AMPERES
0.1
0.01
0.001
0.2 0.4
Fig. 3-TYPICAL REVERSE CHARACTERISTICS Fig. 4-TYPICAL FORWARD CHARACTERISTICS
30
25
20
15
10
5
AK FORWARD SURGE CURRENT, AMPERES
1 2 5 10 20 50 100
8.3ms SINGLE HALF SINE WAVE
JEDEC METHOD
14
12
10
8.0
6.0
4.0
2.0
JUNCTION CAPACITANCE, pF
.1
1
10
100
Fig. 5-MAXIMUM NON-REPETITIVE SURGE
Fig. 6-TYPICAL JUNCTION CAPACITANCE
CURRENT
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