Composite Transistors
2.1±0.1
0.425
1.25±0.1
0.2±0.05
2.0±0.1
0.65
1
2
3
4
5
0.9± 0.1
0.7±0.1
0.2
0 to 0.1
0.12
+0.05
– 0.02
0.2±0.1
0.425
0.65
XP1D874
N-channel junction FET
For low-frequency impedance conversion
For infrared sensor
Features
■
●
Two elements incorporated into one package.
(Drain-coupled FETs)
●
Reduction of the mounting area and assembly cost by one half.
Basic Part Number of Element
■
●
2SK1842 × 2 elements
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter Symbol Ratings Unit
Rating
of
element
Overall
Gate to drain voltage
Gate to source voltage
Gate current I
Drain current I
Total power dissipation
Junction temperature
Storage temperature
V
GDO
V
GSO
G
D
P
T
T
j
T
stg
–40 V
–40 V
10 mA
1mA
150 mW
150 ˚C
–55 to +150 ˚C
1 : Source (FET1) 4 : Gate (FET2)
2 : Drain 5 : Gate (FET1)
3 : Source (FET2) EIAJ : SC–88A
S–Mini T ype Packa ge (5–pin)
Marking Symbol: EQ
Internal Connection
FET 1
1
2
34
FET 2
Unit: mm
5
Electrical Characteristics (Ta=25˚C)
■
Parameter Symbol Conditions min typ max Unit
Gate to drain voltage V
Drain current I
Gate cutoff current I
GDS
DSS
GSS
Forward transfer admittance | YfS |V
Gate to source cutoff voltage V
Common source short-circuit input capacitance
Common source reverse transfer capacitance
Common source short-circuit output capacitance
GSC
C
iss
C
rss
C
oss
IG = –10µA, VGS = 0 –40 V
VDS = 10V, VGS = 0 30 200 µA
VGS = –20V, VDS = 0 – 0.5 nA
= 10V, VGS = 0, f = 1kHz 0.05 mS
DS
VDS = 10V, ID = 1µA –1.3 –3.0 V
VDS = 10V, VGS = 0, f = 1MHz 1.0 pF
VDS = 10V, VGS = 0, f = 1MHz 0.4 pF
VDS = 10V, VGS = 0, f = 1MHz 0.4 pF
1
Composite Transistors XP1D874
PT — Ta ID — V
250
)
200
mW
(
T
150
100
50
Total power dissipation P
0
02040 8060 140120100 160
Ambient temperature Ta (˚C
DS
240
200
Ta=25˚C
)
µA
(
160
D
120
80
Drain current I
40
0
012210486
)
Drain to source voltage VDS (V
VGS=0.4V
0.2V
0V
–0.2V
–0.4V
–0.6V
)
240
200
)
µA
(
160
D
120
80
Drain current I
40
0
–2.0 0.4–1.4 –0.2–0.8
ID — V
GS
VDS=10V
Ta=–25˚C
25˚C
75˚C
Drain to source voltage VGS (V
)
2