Panasonic XP0D873 Datasheet

Composite Transistors

2.1±0.1

0.425

1.25±0.1

0.2±0.05

2.0±0.1

0.65

1

2

3

4

5

0.9± 0.1

0.7±0.1

0.2

0 to 0.1

0.12

+0.05

– 0.02

0.2±0.1

0.425

0.65

XP1D873

Silicon N-channel junction FET

For analog switching

Features

■

●

Two elements incorporated into one package.
(Drain-coupled FETs)

●

Reduction of the mounting area and assembly cost by one half.

●

Low-frequency and low-noise J-FET.

Basic Part Number of Element

■

●

2SK1103 × 2 elements

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter Symbol Ratings Unit

Rating
of
element

Overall

Gate to drain voltage
Drain current I
Gate current I
Total power dissipation
Channel temperature
Storage temperature

V

GDS

D

G

P

T

T

ch

T

stg

–50 V

30 mA

10 mA
150 mW
150 ˚C

–55 to +150 ˚C

1 : Source (FET1) 4 : Gate (FET2)
2 : Drain (FET1, 2) 5 : Gate (FET1)
3 : Source (FET2) EIAJ : SC–88A

S–Mini T ype Packa ge (5–pin)

Marking Symbol: OC

Internal Connection

FET 1

1

2

Unit: mm

5

34

FET 2

Electrical Characteristics (Ta=25˚C)

■

Parameter Symbol Conditions min typ max Unit

Drain voltage V
Drain current I
Gate cutoff current I
Gate to source cutoff voltage V
Mutual conductance g
Drain ON resistance R
Common source short-circuit input capacitance
Common source reverse transfer capacitance
Common source short-circuit output capacitance

DSS

GSS

C
C
C

GDS

GSC

m

DS(on)

iss

rss

oss

IG = –10µA, VDS = 0 –50 V
VDS = 10V, VGS = 0 0.2 6.0 mA
VGS = –30V, VDS = 0 –10 nA
VDS = 10V, ID = 10µA –1.5 –3.5 V
VDS = 10V, ID = 1mA, f = 1kHz 1.8 2.5 mS
VDS = 10mV, VGS = 0 300 Ω
VDS = 10V, VGS = 0, f = 1MHz 7 pF
VDS = 10V, VGS = 0, f = 1MHz 1.5 pF
VDS = 10V, VGS = 0, f = 1MHz 1.5 pF

1

Composite Transistors

XP1D873

PT — Ta ID — V

250

)

200

mW

(

T

150

100

50

Total power dissipation P

0

02040 8060 140120100 160

Ambient temperature Ta (˚C

)
mS

(
|

fs

| Yfs | — V

5

4

3

GS

VDS=10V
Ta=25˚C

DS

2.5

2.0

)
mA

(

1.5

D

1.0

Drain current I

0.5

0

0615243

)

Drain to source voltage VDS (V

| Yfs | — I

2.5

)
mS

(
|

2.0

fs

1.5

I

DSS

=10mA

D

Ta=25˚C

VGS=0V

–0.1V

–0.2V
–0.3V
–0.4V

VDS=10V
Ta=25˚C

)

2.5

2.0

)
mA

(

1.5

D

1.0

Drain current I

0.5

0
–1.2 0–1.0 –0.2–0.8 –0.4–0.6

10

(pF)

oss

, C

rss

8

, C

iss

C

6

ID — V

GS

Ta=–25˚C

25˚C

75˚C

Gate to source voltage VGS (V

C

, C

, C

iss

— V

rss

oss

DS

VGS=0
f=1MHz
Ta=25˚C

C

iss

)

=10mA

I

DSS

2

1

Forward transfer admittance |Y

0
–1.6 –1.2 –0.8 –0.4 0

Gate to source voltage VGS (V

1.0

0.5

4

2

C

oss

C

rss

Forward transfer admittance |Y

0

Common source short-circuit input capacitance,

Common source reverse transfer capacitance,

0

02468

)

Drain current ID (mA

)

Common source short-circuit output capacitance

1

Drain to source voltage VDS (V

10 100

)

2