查询XN01601供应商
Composite Transistors
XN01601 (XN1601)
Silicon PNP epitaxial planer transistor (Tr1)
Silicon NPN epitaxial planer transistor (Tr2)
For general amplification
Features
■
●
Two elements incorporated into one package.
(Emitter-coupled transistors)
●
Reduction of the mounting area and assembly cost by one half.
Basic Part Number of Element
■
●
2SB0709A(2SB709A) + 2SD0601A(2SD601A)
Unit: mm
+0.2
-
0.3
2.8
+0.25
-
0.05
1.50.65±0.15 0.65±0.15
15
4
0.05
+0.2
-
2.9
1.9±0.10.8
3
0.95 0.95
0.1
+0.2
-
1.1
0.1 to 0.3
0 to 0.1
2
+0.1
0.4±0.2
1.45±0.1
0.05
-
0.3
0.06
+0.1
-
0.16
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter Symbol Ratings Unit
Collector to base voltage
Collector to emitter voltage
Tr1
Emitter to base voltage
Collector current I
Peak collector current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Tr2
Collector current I
Peak collector current
Total power dissipation
Junction temperature
Overall
Storage temperature
V
CBO
V
CEO
V
EBO
C
I
CP
V
CBO
V
CEO
V
EBO
C
I
CP
P
T
T
j
T
stg
–60 V
–50 V
–7 V
–100 mA
–200 mA
60 V
50 V
100 mA
200 mA
300 mW
150 ˚C
–55 to +150 ˚C
7V
1 : Collector (Tr1) 4 : Emitter
2 : Collector (Tr2) 5 : Base (Tr1)
3 : Base (Tr2) EIAJ : SC–74A
Mini Type Pakage (5–pin)
Marking Symbol: 7S
Internal Connection
Tr1
51
4
32
Tr2
Note.) The Part number in the Parenthesis shows conventional part number.
1
Composite Transistors
Electrical Characteristics (Ta=25˚C)
■
●
Tr1
Parameter Symbol Conditions min typ max Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector cutoff current
Forward current transfer ratio h
Collector to emitter saturation voltage
Transition frequency f
Collector output capacitance C
●
Tr2
Parameter Symbol Conditions min typ max Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector cutoff current
Forward current transfer ratio h
Collector to emitter saturation voltage
Transition frequency f
Collector output capacitance C
I
I
V
I
I
V
CBO
CEO
T
CBO
CEO
T
CBO
CEO
EBO
FE
CE(sat)
ob
CBO
CEO
EBO
FE
CE(sat)
ob
XN01601
IC = –10µA, IE = 0 –60 V
IC = –2mA, IB = 0 –50 V
IE = –10µA, IC = 0 –7V
VCB = –20V, IE = 0 – 0.1 µA
VCE = –10V, IB = 0 –100 µA
VCE = –10V, IC = –2mA 160 460
IC = –100mA, IB = –10mA – 0.3 – 0.5 V
VCB = –10V, IE = 1mA, f = 200MHz 80 MHz
VCB = –10V, IE = 0, f = 1MHz 2.7 pF
IC = 10µA, IE = 0 60 V
IC = 2mA, IB = 0 50 V
IE = 10µA, IC = 0 7 V
VCB = 20V, IE = 0 0.1 µA
VCE = 10V, IB = 0 100 µA
VCE = 10V, IC = 2mA 160 460
IC = 100mA, IB = 10mA 0.1 0.3 V
VCB = 10V, IE = –2mA, f = 200MHz 150 MHz
VCB = 10V, IE = 0, f = 1MHz 3.5 pF
2
Composite Transistors XN01601
Common characteristics chart
— Ta
P
T
500
)
400
mW
(
T
300
200
100
Total power dissipation P
0
0 40 80 120 160
Ambient temperature Ta (˚C
Characteristics charts of Tr1
)
— V
I
C
–60
–50
)
mA
(
–40
C
–30
–20
Collector current I
–10
0
0 –18–2 –4 –6 –8 –10 –12 –14 –16
IB=– 300µA
Collector to emitter voltage VCE (V
IC — V
–240
–200
)
mA
(
–160
C
–120
–80
Collector current I
–40
0
0 –2.0–1.6–1.2–0.8–0.4
Base to emitter voltage VBE (V
25˚C
Ta=75˚C –25˚C
CE
–250µA
–200µA
–150µA
BE
Ta=25˚C
–100µA
–50µA
VCE=– 5V
IC — I
B
–60
VCE=– 5V
Ta=25˚C
–50
)
mA
(
–40
C
–30
–20
Collector current I
–10
0
0 –100 –200 – 300 –400
)
)
V
(
CE(sat)
–0.003
Collector to emitter saturation voltage V
–0.001
)
Base current IB (µA
V
CE(sat)
–10
–3
–1
–0.3
–0.1
–0.03
–0.01
–1 –3
–10 –30 –100 – 300 –1000
Collector current IC (mA
— I
)
C
IC/IB=10
Ta=75˚C
25˚C
–25˚C
)
–400
–350
)
–300
µA
(
–250
B
–200
–150
Base current I
–100
–50
0
0 – 0.4 –0.8 –1.2 –1.6
600
FE
500
400
300
200
100
Forward current transfer ratio h
0
–1 –3
IB — V
BE
VCE=– 5V
Ta=25˚C
Base to emitter voltage VBE (V
hFE — I
C
VCE=– 10V
Ta=75˚C
25˚C
–25˚C
–10 –30 –100 –300 –1000
Collector current IC (mA
)
)
3
Composite Transistors XN01601
fT — I
160
VCB=–10V
Ta=25˚C
140
)
MHz
120
(
T
100
80
60
40
Transition frequency f
20
0
0.1 0.3
1 3 10 30 100
Emitter current IE (mA
NF — I
20
VCB=–5V
=50kΩ
R
g
18
Ta=25˚C
16
)
14
dB
(
12
10
8
6
Noise figure NF
4
2
0
0.1
f=100Hz
0.3 1 3 1020.50.2 5
Emitter current IE (mA
1kHz
E
E
10kHz
Cob — V
8
)
pF
7
(
ob
6
5
4
3
2
1
Collector output capacitance C
0
–2
–3
–1 – 5
)
Collector to base voltage VCB (V
h Parameter — I
300
200
100
50
30
20
10
Parameter h
5
3
2
1
0.3 1 3 1020.50.2 5
0.1
)
Emitter current IE (mA
–10
hre (×10–4)
CB
–20
h
fe
hoe (µS)
hie (kΩ)
f=1MHz
=0
I
E
Ta=25˚C
–50
–30 –100
)
E
VCE=– 5V
f=270Hz
Ta=25˚C
)
6
5
)
dB
(
4
3
2
Noise figure NF
1
0
0.01 0.03
300
200
100
50
30
20
10
Parameter h
5
3
2
1
0.1
NF — I
E
VCB=–5V
f=1kHz
=2kΩ
R
g
Ta=25˚C
0.1 0.3 1 3 10
fe
CE
hoe (µS)
hie (kΩ)
)
IE=2mA
f=270Hz
Ta=25˚C
Emitter current IE (mA
h Parameter — V
h
hre (×10–4)
0.3 1 3 1020.50.2 5
Collector to emitter voltage VCE (V
)
Characteristics charts of Tr2
— V
I
C
60
50
)
mA
(
40
C
30
20
Collector current I
10
0
01024 86
Collector to emitter voltage VCE (V
4
CE
Ta=25˚C
IB=160µA
140µA
120µA
100µA
80µA
60µA
40µA
20µA
IB — V
BE
1200
1000
VCE=10V
Ta=25˚C
)
µA
(
800
B
600
400
Base current I
200
0
0 1.00.80.60.40.2
)
Base to emitter voltage VBE (V
)
240
200
)
mA
(
160
C
120
80
Collector current I
40
0
0 2.01.61.20.80.4
IC — V
BE
VCE=10V
25˚C
Ta=75˚C – 25˚C
Base to emitter voltage VBE (V
)
Composite Transistors XN01601
IC — I
240
VCE=10V
Ta=25˚C
200
)
mA
(
160
C
120
80
Collector current I
40
0
0 1000800600400200
Base current IB (µA
fT — I
300
)
240
MHz
(
T
180
120
60
Transition frequency f
B
E
)
VCB=10V
Ta=25˚C
V
— I
CE(sat)
100
)
V
(
30
CE(sat)
10
3
1
0.3
0.1
0.03
Collector to emitter saturation voltage V
0.01
0.1 0.3
Ta=75˚C
1 3 10 30 100
Collector current IC (mA
NV — I
240
VCE=10V
G
=80dB
V
Function=FLAT
200
Ta=25˚C
)
mV
(
160
120
80
Noise voltage NV
40
C
IC/IB=10
25˚C
–25˚C
)
C
Rg=100kΩ
22kΩ
4.7kΩ
hFE — I
C
600
FE
500
400
300
200
100
Forward current transfer ratio h
0
0.1 0.3
1 3 10 30 100
VCE=10V
Ta=75˚C
25˚C
–25˚C
Collector current IC (mA
)
0
–0.1 – 0.3
–1 –3 –10 – 30 –100
Emitter current IE (mA
0
30 100 300 100050 50020 200
10
)
Collector current IC (µA
)
5
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Govern-
ment if any of the products or technologies described in this material and controlled under the
"Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative character-
istics and applied circuit examples of the products. It does not constitute the warranting of industrial
property, the granting of relative rights, or the granting of any license.
(3) The products described in this material are intended to be used for standard applications or gen-
eral electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(4) The products and product specifications described in this material are subject to change without
notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to
make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, redundant design is recommended,
so that such equipment may not violate relevant laws or regulations because of the function of our
products.
(6) When using products for which dry packing is required, observe the conditions (including shelf life
and after-unpacking standby time) agreed upon when specification sheets are individually exchanged.
(7) No part of this material may be reprinted or reproduced by any means without written permission
from our company.
Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic
semiconductor products best suited to their applications.
Due to modification or other reasons, any information contained in this material, such as available
product types, technical data, and so on, is subject to change without notice.
Customers are advised to contact our semiconductor sales office and obtain the latest information
before starting precise technical research and/or purchasing activities.
B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but
there is always the possibility that further rectifications will be required in the future. Therefore,
Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material.
C. These materials are solely intended for a customer's individual use.
Therefore, without the prior written approval of Panasonic, any other use such as reproducing,
selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
2001 MAR
Loading...