Panasonic XN0121M Datasheet

Composite Transistors

XN121M

NPN epitaxial planer transistor

For switching/digital circuits

Features

■

●

Two elements incorporated into one package.
(Emitter-coupled transistors with built-in resistor)

●

Reduction of the mounting area and assembly cost by one half.

Basic Part Number of Element

■

●

UN221M × 2 elements

Absolute Maximum Ratings (Ta=25˚C) 1 : Collector (Tr1) 4 : Emitter

■

Parameter Symbol Ratings Unit

Collector to base voltage

Rating

Collector to emitter voltage

of
element

Collector current I
Total power dissipation
Junction temperature

Overall

Storage temperature

V

CBO

V

CEO

C

P

T

T

j

T

stg

50 V

50 V
100 mA
300 mW
150 ˚C

–55 to +150 ˚C

2 : Collector (Tr2) 5 : Base (Tr1)
3 : Base (Tr2) EIAJ : SC–74A

Marking Symbol: EM

Internal Connection

4

0.05

+0.2

-

2.9

1.9±0.10.8
3

0.95 0.95

0.1

+0.2

-

1.1

51

4

Unit: mm

+0.2

-

0.3

2.8

+0.25

-

0.05

1.50.65±0.15 0.65±0.15

15

1.45±0.1

2

0.05

+0.1

-

0.3

0.06

+0.1

-

0.16

0.1 to 0.3

0 to 0.1

0.4±0.2

Mini Type Pakage (5–pin)

Tr1

Electrical Characteristics (Ta=25˚C)

■

Parameter Symbol Conditions min typ max Unit

Collector to base voltage V
Collector to emitter voltage V

Collector cutoff current

Emitter cutoff current I
Forward current transfer ratio h
Forward current transfer hFE ratio
Collector to emitter saturation voltage
Output voltage high level V
Output voltage low level V
Input resistance R

CBO

CEO

I

CBO

I

CEO

EBO

FE

hFE (small/large)
V

CE(sat)

OH

OL

1

Resistance ratio R1/R
Transition frequency f

T

32

Tr2

IC = 10µA, IE = 0 50 V
IC = 2mA, IB = 0 50 V
VCB = 50V, IE = 0 0.1 µA
VCE = 50V, IB = 0 0.5 µA
VEB = 6V, IC = 0 0.2 mA
VCE = 10V, IC = 5mA 80
VCE = 10V, IC = 5mA 0.5 0.99
IC = 10mA, IB = 0.3mA 0.06 0.25 V
VCC = 5V, VB = 0.5V, RL = 1kΩ 4.9 V
VCC = 5V, VB = 2.5V, RL = 1kΩ 0.2 V

–30% 2.2 +30% kΩ

2

0.047

VCB = 10V, IE = –2mA, f = 200MHz 150 MHz

1

Composite Transistors

PT — Ta

500

)

400

mW

(

T

300

200

100

Total power dissipation P

0

0 40 80 120 160

Ambient temperature Ta (˚C

XN121M

)

— V

I

C

CE

240

200

)
mA

(

160

C

120

80

Collector current I

40

0

012210486

IB=1.0mA

0.9mA

0.8mA

0.7mA

Collector to emitter voltage VCE (V

)
pF

(

ob

Cob — V

5

4

3

2

1

CB

f=1MHz
I
Ta=25˚C

Collector output capacitance C

0

0.1 0.3

1 3 10 30 100

Collector to base voltage VCB (V

Ta=25˚C

0.6mA

0.5mA

0.4mA

0.3mA

0.2mA

0.1mA

=0

E

V

— I

CE(sat)

10

)

V

(

3

CE(sat)

1

0.3

0.1

0.03

0.01

0.003

Collector to emitter saturation voltage V

0.001
13

)

25˚C

–25˚C

10 30 100 300 1000

Collector current IC (mA

IO — V

4

10

)

3

10

µA

(

O

2

10

1

10

Output current I

1

0.4

)

Input voltage VIN (V

Ta=75˚C

IN

C

IC/IB=10

VO=5V
Ta=25˚C

)

500

FE

400

300

200

100

Forward current transfer ratio h

0

13

)

100

30

)

10

V

(

IN

3

1

0.3

Input voltage V

0.1

0.03

0.01

1.41.21.00.80.6

0.1 0.3

hFE — I

C

VCE=10V

Ta=75˚C
25˚C

–25˚C

10 30 100 300 1000

Collector current IC (mA

VIN — I

O

VO=0.2V
Ta=25˚C

1 3 10 30 100

Output current IO (mA

)

)

2