Panasonic XN0121F Datasheet

Composite Transistors
XN121F
Silicon NPN epitaxial planer transistor
For switching/digital circuits
Features
Reduction of the mounting area and assembly cost by one half.
Basic Part Number of Element
UN121F × 2 elements
Absolute Maximum Ratings (Ta=25˚C) 1 : Collector (Tr1) 4 : Emitter
Rating of element
Overall
Parameter Symbol Ratings Unit
Collector to base voltage Collector to emitter voltage Collector current I Total power dissipation Junction temperature Storage temperature
V
CBO
V
CEO
C
P
T
T
j
T
stg
50 V
50 V 100 mA 300 mW 150 ˚C
–55 to +150 ˚C
2 : Collector (Tr2) 5 : Base (Tr1) 3 : Base (Tr2) EIAJ : SC–74A
Marking Symbol: AR
Internal Connection
4
0.05
+0.2
-
2.9
1.9±0.10.8 3
0.95 0.95
0.1
+0.2
-
1.1
51
4
Unit: mm
+0.2
-
0.3
2.8
+0.25
-
0.05
1.50.65±0.15 0.65±0.15
15
1.45±0.1
2
0.05
+0.1
-
0.3
0.06
+0.1
-
0.16
0.1 to 0.3
0 to 0.1
0.4±0.2
Mini Type Pakage (5–pin)
Tr1
Electrical Characteristics (Ta=25˚C)
Parameter Symbol Conditions min typ max Unit
Collector to base voltage V Collector to emitter voltage V
Collector cutoff current
Emitter cutoff current I Forward current transfer ratio h Forward current transfer hFE ratio Collector to emitter saturation voltage Output voltage high level V Output voltage low level V Transition frequency f Input resistance R
CBO
CEO
I
CBO
I
CEO
EBO
FE
hFE (small/large)*1VCE = 10V, IC = 5mA 0.5 0.99 V
CE(sat)
OH
OL
T
1
Resistance ratio R1/R
*1
Ratio between 2 elements
32
Tr2
IC = 10µA, IE = 0 50 V IC = 2mA, IB = 0 50 V VCB = 50V, IE = 0 0.1 µA VCE = 50V, IB = 0 0.5 µA VEB = 6V, IC = 0 1.0 mA VCE = 10V, IC = 5mA 30
IC = 10mA, IB = 0.3mA 0.25 V VCC = 5V, VB = 0.5V, RL = 1k 4.9 V VCC = 5V, VB = 2.5V, RL = 1k 0.2 V VCB = 10V, IE = –2mA, f = 200MHz 150 MHz
–30% 4.7 +30% k
2
0.47
1
Composite Transistors
PT — Ta
500
)
400
mW
(
T
300
200
100
Total power dissipation P
0
0 40 80 120 160
Ambient temperature Ta (˚C
XN121F
)
— V
I
C
240
200
) mA
(
160
C
120
IB=1.0mA
80
Collector current I
40
0
012210486
Collector to emitter voltage VCE (V
Cob — V
6
) pF
(
5
ob
4
0.6mA
CE
0.8mA
0.7mA
CB
Ta=25˚C
0.9mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
f=1MHz I
=0
E
Ta=25˚C
V
— I
CE(sat)
100
)
V
(
30
CE(sat)
10
3
1
0.3
0.1
0.03
Collector to emitter saturation voltage V
0.01
0.1 0.3
)
Collector current IC (mA
25˚C
–25˚C
1 3 10 30 100
IO — V
10000
3000
)
1000
µA
(
O
300
C
IC/IB=10
Ta=75˚C
160
FE
120
80
40
Forward current transfer ratio h
0
13
)
IN
VO=5V Ta=25˚C
100
30
)
10
V
(
IN
3
hFE — I
10 30 100 300 1000
C
VCE=10V
Ta=75˚C
25˚C –25˚C
Collector current IC (mA
VIN — I
O
VO=0.2V Ta=25˚C
)
3
2
1
Collector output capacitance C
0
0.1 0.3
1 3 10 30 100
Collector to base voltage VCB (V
2
100
30
10
Output current I
3
1
0.4
)
Input voltage VIN (V
1.41.21.00.80.6
)
1
0.3
Input voltage V
0.1
0.03
0.01
0.1 0.3
Output current IO (mA
1 3 10 30 100
)
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