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Composite Transistors
XN1211
Silicon NPN epitaxial planer transistor
For switching/digital circuits
Features
■
●
Two elements incorporated into one package.
(Emitter-coupled transistors with built-in resistor)
●
Reduction of the mounting area and assembly cost by one half.
Basic Part Number of Element
■
●
UN1211 × 2 elements
Absolute Maximum Ratings (Ta=25˚C) 1 : Collector (Tr1) 4 : Emitter
■
Parameter Symbol Ratings Unit
Collector to base voltage
Rating
Collector to emitter voltage
of
element
Collector current I
Total power dissipation
Junction temperature
Overall
Storage temperature
V
CBO
V
CEO
C
P
T
T
j
T
stg
50 V
50 V
100 mA
300 mW
150 ˚C
–55 to +150 ˚C
2 : Collector (Tr2) 5 : Base (Tr1)
3 : Base (Tr2) EIAJ : SC–74A
Marking Symbol: 9T
Internal Connection
4
0.05
+0.2
-
2.9
1.9±0.10.8
3
0.95 0.95
0.1
+0.2
-
1.1
51
4
Unit: mm
+0.2
-
0.3
2.8
+0.25
-
0.05
1.50.65±0.15 0.65±0.15
15
1.45±0.1
2
0.05
+0.1
-
0.3
0.06
+0.1
-
0.16
0.1 to 0.3
0 to 0.1
0.4±0.2
Mini Type Pakage (5–pin)
Tr1
Electrical Characteristics (Ta=25˚C)
■
Parameter Symbol Conditions min typ max Unit
Collector to base voltage V
Collector to emitter voltage V
Collector cutoff current
Emitter cutoff current I
Forward current transfer ratio h
Forward current transfer hFE ratio
Collector to emitter saturation voltage
Output voltage high level V
Output voltage low level V
Transition frequency f
Input resistance R
CBO
CEO
I
CBO
I
CEO
EBO
FE
hFE (small/large)*1VCE = 10V, IC = 5mA 0.5 0.99
V
CE(sat)
OH
OL
T
1
Resistance ratio R1/R
*1
Ratio between 2 elements
32
Tr2
IC = 10µA, IE = 0 50 V
IC = 2mA, IB = 0 50 V
VCB = 50V, IE = 0 0.1 µA
VCE = 50V, IB = 0 0.5 µA
VEB = 6V, IC = 0 0.5 mA
VCE = 10V, IC = 5mA 35
IC = 10mA, IB = 0.3mA 0.25 V
VCC = 5V, VB = 0.5V, RL = 1kΩ 4.9 V
VCC = 5V, VB = 2.5V, RL = 1kΩ 0.2 V
VCB = 10V, IE = –2mA, f = 200MHz 150 MHz
–30% 10 +30% kΩ
2
0.8 1.0 1.2
1
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Composite Transistors
PT — Ta
500
)
400
mW
(
T
300
200
100
Total power dissipation P
0
0 40 80 120 160
Ambient temperature Ta (˚C
XN1211
)
— V
I
C
CE
160
140
)
120
mA
(
C
100
80
60
40
Collector current I
20
IB=1.0mA
0.9mA
0.8mA
0
012210486
Collector to emitter voltage VCE (V
)
pF
(
ob
Cob — V
6
5
4
3
CB
Ta=25˚C
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
f=1MHz
I
=0
E
Ta=25˚C
V
CE(sat)
100
)
V
(
30
CE(sat)
10
3
1
0.3
0.1
0.03
Collector to emitter saturation voltage V
0.01
0.1 0.3
)
–25˚C
1 3 10 30 100
Collector current IC (mA
IO — V
10000
3000
)
1000
µA
(
O
300
100
— I
25˚C
IN
C
Ta=75˚C
IC/IB=10
VO=5V
Ta=25˚C
hFE — I
C
400
FE
300
200
100
VCE=10V
Ta=75˚C
25˚C
–25˚C
Forward current transfer ratio h
0
13
)
100
30
)
10
V
(
IN
3
1
10 30 100 300 1000
Collector current IC (mA
VIN — I
O
VO=0.2V
Ta=25˚C
)
2
1
Collector output capacitance C
0
0.1 0.3
1 3 10 30 100
Collector to base voltage VCB (V
2
30
10
Output current I
3
1
0.4
)
Input voltage VIN (V
1.41.21.00.80.6
)
0.3
Input voltage V
0.1
0.03
0.01
0.1 0.3
Output current IO (mA
1 3 10 30 100
)