Panasonic XN01210 Datasheet

Composite Transistors

XN1210

Silicon NPN epitaxial planer transistor

For switching/digital circuits

Features

■

●

Two elements incorporated into one package.
(Emitter-coupled transistors with built-in resistor)

●

Reduction of the mounting area and assembly cost by one half.

●

Transistor with built-in resistor

Basic Part Number of Element

■

●

UN1210 × 2 elements

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter Symbol Ratings Unit

Collector to base voltage

Rating

Collector to emitter voltage

of
element

Collector current I
Total power dissipation
Junction temperature

Overall

Storage temperature

V

CBO

V

CEO

C

P

T

T

j

T

stg

50 V

50 V
100 mA
300 mW
150 ˚C

–55 to +150 ˚C

+0.2

-

0.3

2.8

+0.25

-

0.05

1.50.65±0.15 0.65±0.15

4

0.05

+0.2

-

2.9

1.9±0.10.8
3

0.95 0.95

0.1

+0.2

-

1.1

0.1 to 0.3

0 to 0.1

1 : Collector (Tr1) 4 : Emitter
2 : Collector (Tr2) 5 : Base (Tr1)
3 : Base (Tr2) EIAJ : SC–74A

Mini Type Pakage (5–pin)

Marking Symbol: AC

Internal Connection

Tr1

51

4

15

2

+0.1

0.4±0.2

0.05

-

0.3

+0.1

Unit: mm

1.45±0.1

0.06

-

0.16

Electrical Characteristics (Ta=25˚C)

■

Parameter Symbol Conditions min typ max Unit

Collector to base voltage V
Collector to emitter voltage V

Collector cutoff current

Emitter cutoff current I
Forward current transfer ratio h
Forward current transfer hFE ratio
Collector to emitter saturation voltage
Output voltage high level V
Output voltage low level V
Transition frequency f
Input resistance R

*1

Ratio between 2 elements

CBO

CEO

I

CBO

I

CEO

EBO

FE

hFE (small/large)*1VCE = 10V, IC = 5mA 0.5 0.99
V

CE(sat)

OH

OL

T

1

32

Tr2

IC = 10µA, IE = 0 50 V
IC = 2mA, IB = 0 50 V
VCB = 50V, IE = 0 0.1 µA
VCE = 50V, IB = 0 0.5 µA
VEB = 6V, IC = 0 0.01 mA
VCE = 10V, IC = 5mA 160 460

IC = 10mA, IB = 0.3mA 0.25 V
VCC = 5V, VB = 0.5V, RL = 1kΩ 4.9 V
VCC = 5V, VB = 2.5V, RL = 1kΩ 0.2 V
VCB = 10V, IE = –2mA, f = 200MHz 150 MHz

–30% 47 +30% kΩ

1

Composite Transistors

PT — Ta

500

)

400

mW

(

T

300

200

100

Total power dissipation P

0

0 40 80 120 160

Ambient temperature Ta (˚C

XN1210

)

— V

I

C

60

50

)
mA

(

40

C

30

20

Collector current I

10

IB=1.0mA

0.9mA

0.3mA

0

012210486

0.8mA

Collector to emitter voltage VCE (V

Cob — V

6

)
pF

(

5

ob

4

3

CE

0.7mA

0.5mA

0.6mA

CB

Ta=25˚C

0.4mA

0.1mA

f=1MHz

=0

I

E

Ta=25˚C

V

— I

CE(sat)

100

)

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

Collector to emitter saturation voltage V

)

–25˚C

0.01

0.1 0.3

1 3 10 30 100

Collector current IC (mA

IO — V

10000

3000

)

1000

µA

(

O

300

100

25˚C

IN

C

Ta=75˚C

VO=5V
Ta=25˚C

IC/IB=10

)

400

350

FE

300

250

200

150

100

Forward current transfer ratio h

50

0

13

100

30

)

10

V

(

IN

3

1

hFE — I

C

VCE=10V

Ta=75˚C

25˚C

–25˚C

10 30 100 300 1000

Collector current IC (mA

VIN — I

O

VO=0.2V
Ta=25˚C

)

2

1

Collector output capacitance C

0

0.1 0.3

1 3 10 30 100

Collector to base voltage VCB (V

2

30

10

Output current I

3

1

0.4

)

Input voltage VIN (V

1.41.21.00.80.6

)

0.3

Input voltage V

0.1

0.03

0.01

0.1 0.3

Output current IO (mA

1 3 10 30 100

)