Panasonic XN0111M Datasheet

Composite Transistors

XN111M

PNP epitaxial planer transistor

For switching/digital circuits

Features

■

●

Two elements incorporated into one package.
(Emitter-coupled transistors with built-in resistor)

●

Reduction of the mounting area and assembly cost by one half.

Basic Part Number of Element

■

●

UN211M × 2 elements

Absolute Maximum Ratings (Ta=25˚C) 1 : Collector (Tr1) 4 : Emitter

■

Rating
of
element

Overall

Parameter Symbol Ratings Unit

Collector to base voltage
Collector to emitter voltage
Collector current I
Total power dissipation
Junction temperature
Storage temperature

V

CBO

V

CEO

C

P

T

T

j

T

stg

–50 V
–50 V

–100 mA

300 mW
150 ˚C

–55 to +150 ˚C

2 : Collector (Tr2) 5 : Base (Tr1)
3 : Base (Tr2) EIAJ : SC–74A

Marking Symbol: EK

Internal Connection

4

0.05

+0.2

-

2.9

1.9±0.10.8
3

0.95 0.95

0.1

+0.2

-

1.1

5

Unit: mm

+0.2

-

0.3

2.8

+0.25

-

0.05

1.50.65±0.15 0.65±0.15

15

1.45±0.1

2

0.05

+0.1

-

0.3

0.06

+0.1

-

0.16

0.1 to 0.3

0 to 0.1

0.4±0.2

Mini Type Pakage (5–pin)

Tr1

1

Electrical Characteristics (Ta=25˚C)

■

Parameter Symbol Conditions min typ max Unit

Collector to base voltage V
Collector to emitter voltage V

Collector cutoff current

Emitter cutoff current I
Forward current transfer ratio h
Forward current transfer hFE ratio
Collector to emitter saturation voltage
Output voltage high level V
Output voltage low level V
Input resistance R

CBO

CEO

I

CBO

I

CEO

EBO

FE

hFE (small/large)*1VCE = –10V, IC = –5mA 0.5 0.99
V

CE(sat)

OH

OL

1

Resistance ratio R1/R
Transition frequency f

*1

Ratio between 2 elements

T

4

32

Tr2

IC = –10µA, IE = 0 –50 V
IC = –2mA, IB = 0 –50 V
VCB = –50V, IE = 0 – 0.1 µA
VCE = –50V, IB = 0 – 0.5 µA
VEB = –6V, IC = 0 – 0.2 mA
VCE = –10V, IC = –5mA 80

IC = –10mA, IB = – 0.3mA – 0.09 – 0.25 V
VCC = –5V, VB = – 0.5V, RL = 1kΩ –4.9 V
VCC = –5V, VB = –2.5V, RL = 1kΩ – 0.2 V

–30% 2.2 +30% kΩ

2

0.047

VCB = –10V, IE = 1mA, f = 200MHz 80 MHz

1

Composite Transistors

PT — Ta

500

)

400

mW

(

T

300

200

100

Total power dissipation P

0

0 40 80 120 160

Ambient temperature Ta (˚C

XN111M

)

— V

I

C

240

200

)
mA

(

160

C

120

80

Collector current I

40

0

0 –12–2 –10–4 –8–6

IB=–1.0mA

–0.9mA

Collector to emitter voltage VCE (V

Cob — V

10

)
pF

(

8

ob

6

4

CE

–0.8mA

–0.7mA

–0.6mA

CB

f=1MHz
I
Ta=25˚C

Ta=25˚C

–0.5mA
–0.4mA
–0.3mA

–0.2mA
–0.1mA

=0

E

–10

)

V

(

–3

CE(sat)

–1

–0.3

–0.1

–0.03

–0.01

–0.003

V

25˚C

–25˚C

CE(sat)

Ta=75˚C

— I

C

IC/IB=10

hFE — I

500

FE

400

300

200

100

C

VCE=–10V

Ta=75˚C
25˚C
–25˚C

Forward current transfer ratio h

Collector to emitter saturation voltage V

)
V

(

IN

0

–1 –3

–10 –30 –100 –300 –1000

Collector current IC (mA

VIN — I

–100

–30

–10

–3

–1

–0.3

O

VO=–0.2V
Ta=25˚C

)

–0.001

–1 –3

)

–4

10

)

–3

10

µA

(

O

–2

10

–10 –30 –100 –300 –1000

Collector current IC (mA

IO — V

IN

VO=–5V
Ta=25˚C

)

2

Collector output capacitance C

0
–0.1 –0.3

–1 –3 –10 –30 –100

Collector to base voltage VCB (V

2

–1

10

Output current I

1
–0.4

)

Input voltage VIN (V

–1.4–1.2–1.0–0.8–0.6

)

Input voltage V

–0.1

–0.03

–0.01

–0.1 –0.3

Output current IO (mA

–1 –3 –10 –30 –100

)