Panasonic XN0111F Datasheet
Composite Transistors
XN111F
Silicon PNP epitaxial planer transistor
For switching/digital circuits
Features
■
●
Two elements incorporated into one package.
(Emitter-coupled transistors with built-in resistor)
●
Reduction of the mounting area and assembly cost by one half.
Basic Part Number of Element
■
●
UN111F × 2 elements
Absolute Maximum Ratings (Ta=25˚C) 1 : Collector (Tr1) 4 : Emitter
■
Rating
of
element
Overall
Parameter Symbol Ratings Unit
Collector to base voltage
Collector to emitter voltage
Collector current I
Total power dissipation
Junction temperature
Storage temperature
V
CBO
V
CEO
C
P
T
T
j
T
stg
–50 V
–50 V
–100 mA
300 mW
150 ˚C
–55 to +150 ˚C
2 : Collector (Tr2) 5 : Base (Tr1)
3 : Base (Tr2) EIAJ : SC–74A
Marking Symbol: 7O
Internal Connection
4
0.05
+0.2
-
2.9
1.9±0.10.8
3
0.95 0.95
0.1
+0.2
-
1.1
5
Unit: mm
+0.2
-
0.3
2.8
+0.25
-
0.05
1.50.65±0.15 0.65±0.15
15
1.45±0.1
2
0.05
+0.1
-
0.3
0.06
+0.1
-
0.16
0.1 to 0.3
0 to 0.1
0.4±0.2
Mini Type Pakage (5–pin)
Tr1
1
Electrical Characteristics (Ta=25˚C)
■
Parameter Symbol Conditions min typ max Unit
Collector to base voltage V
Collector to emitter voltage V
Collector cutoff current
Emitter cutoff current I
Forward current transfer ratio h
Forward current transfer hFE ratio
Collector to emitter saturation voltage
Output voltage high level V
Output voltage low level V
Transition frequency f
Input resistance R
CBO
CEO
I
CBO
I
CEO
EBO
FE
hFE (small/large)*1VCE = –10V, IC = –5mA 0.5 0.99
V
CE(sat)
OH
OL
T
1
Resistance ratio R1/R
*1
Ratio between 2 elements
4
32
Tr2
IC = –10µA, IE = 0 –50 V
IC = –2mA, IB = 0 –50 V
VCB = –50V, IE = 0 – 0.1 µA
VCE = –50V, IB = 0 – 0.5 µA
VEB = –6V, IC = 0 – 1.0 mA
VCE = –10V, IC = –5mA 30
IC = –10mA, IB = – 0.3mA – 0.25 V
VCC = –5V, VB = – 0.5V, RL = 1kΩ –4.9 V
VCC = –5V, VB = –2.5V, RL = 1kΩ – 0.2 V
VCB = –10V, IE = 1mA, f = 200MHz 80 MHz
–30% 4.7 +30% kΩ
2
0.47
1
Composite Transistors
PT — Ta
500
)
400
mW
(
T
300
200
100
Total power dissipation P
0
0 40 80 120 160
Ambient temperature Ta (˚C
XN111F
)
— V
I
C
–240
–200
)
mA
(
–160
C
–120
–80
Collector current I
–40
IB=–1.0mA
–0.9mA
0
0 –12–2 –10–4 –8–6
–0.8mA
Collector to emitter voltage VCE (V
Cob — V
6
)
pF
(
5
ob
4
CE
–0.7mA
–0.6mA
CB
Ta=25˚C
–0.5mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
f=1MHz
I
=0
E
Ta=25˚C
V
–100
)
V
(
–30
CE(sat)
–10
–3
–1
–0.3
–0.1
–0.03
Collector to emitter saturation voltage V
–0.01
)
–10000
–3000
)
–1000
µA
(
O
–300
–25˚C
–0.1 –0.3
Collector current IC (mA
— I
CE(sat)
25˚C
–1 –3 –10 –30 –100
C
IC/IB=10
Ta=75˚C
)
IO — V
IN
VO=–5V
Ta=25˚C
hFE — I
160
FE
120
80
40
C
VCE=–10V
Ta=75˚C
25˚C
–25˚C
Forward current transfer ratio h
0
–1 –3
–10 –30 –100 –300 –1000
Collector current IC (mA
–100
)
V
(
IN
VIN — I
–30
–10
–3
O
VO=–0.2V
Ta=25˚C
)
3
2
1
Collector output capacitance C
0
–0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
2
–100
–30
–10
Output current I
–3
–1
–0.4
)
Input voltage VIN (V
–1.4–1.2–1.0–0.8–0.6
)
–1
–0.3
Input voltage V
–0.1
–0.03
–0.01
–0.1 –0.3
Output current IO (mA
–1 –3 –10 –30 –100
)
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