Panasonic UP0KG8DG User Manual

This product complies with the RoHS Directive (EU 2002/95/EC).

3

4

1 2

5

Tr

SBD

Multi Chip Discrete

UP0KG8DG

Silicon epitaxial planar type (SBD)
Silicon PNP epitaxial planar type (Tr)

For digital circuits

 Features

 Two elements incorporated into one package (SBD + Tr)
 Costs can be reduced through downsizing of the equipment and reduction of

the number of parts

 Basic Part Number

 MA2SD240G + UNR31A3G

 Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Reverse voltage V

Repetitive peak reverse voltage V

SBD

Forward current (Average) I

Peak forward current I

Non-repetitive peak forward

surge current

Collector-base voltage

(Emitter open)

Tr

Collector-emitter voltage

(Base open)

Collector current I

Total power dissipation P

Overall

Junction temperature T

Storage temperature T

Note) *: 50 Hz sine wave 1 cycle (Non-repetitive peak current)

F(AV)

I

V

V

R

RRM

FM

FSM

CBO

CEO

C

T

j

stg

20 V

20 V

200 mA

300 mA

1 A

-50

-50

-80

125 mW

125

–55 to +125

V

V

mA

°C

°C

 Package

Code

SSMini5-F3
Pin Name

1: Anode 4: Collector

2: Base 5: Cathode

3: Emitter

 Marking Symbol: 6K

 Internal Connection

Publication date: October 2007 SJJ00402AED 1

This product complies with the RoHS Directive (EU 2002/95/EC).

Bias Application Unit (N-50BU)

90%

Pulse Generator
(PG-10N)
Rs = 50 Ω

Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω

tp = 2 µs
tr = 0.35 ns
δ = 0.05

IF = IR = 100 mA
RL = 100 Ω

10%

Input Pulse Output Pulse

I

rr

= 10 mA

t

r

t

p

t

rr

V

R

I

F

t

t

A

UP0KG8DG

 Electrical Characteristics Ta = 25°C±3°C

 SBD

Parameter Symbol Conditions Min Typ Max Unit

Forward voltage V

Reverse current I

Terminal capacitance C

Reverse recovery time

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. Absolute frequency of input and output is 250 MHz

2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage

of current from the operating equipment.

3. *: trr measurement circuit

*

IF = 200 mA 0.50 0.58 V

F

VR = 10 V 0.1 1

R

VR = 0 V, f = 1 MHz 25 pF

t

IF = IR = 100 mA, Irr = 10 mA,

t

rr

RL = 100 W

3 ns

mA

 Tr2

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Collector-base cutoff current (Emitter open) I

Collector-emitter cutoff current (Base open) I

Emitter-base cutoff current (Collector open) I

Forward current transfer ratio h

Collector-emitter saturation voltage V

Output voltage high-level V

Output voltage low-level V

CBOIC

CEOIC

CBO

CEO

EBO

FE

CE(sat)IC

OH

OL

Input resistance R

Resistance ratio R1 / R

Transition frequency f

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

T

= -10 mA, IE = 0

= -2 mA, IB = 0

-50

-50

VCB = -50 V, IE = 0

VCE = -50 V, IB = 0

VEB = -6 V, IC = 0

VCE = -10 V, IC = -5 mA 80

= -10 mA, IB = - 0.3 mA

VCC = -5 V, VB = - 0.5 V, RL = 1 kW

-4.9

VCC = -5 V, VB = -3.5 V, RL = 1 kW

1

2

-30%

0.8 1.0 1.2

47

VCB = -10 V, IE = 2 mA, f = 200 MHz 80 MHz

- 0.1 mA

- 0.5 mA

- 0.1

mA

- 0.25

- 0.2

+30%

V

V



V

V

V

kW



2 SJJ00402AED