Panasonic UP0KG8DG User Manual

This product complies with the RoHS Directive (EU 2002/95/EC).

3

4

1 2

5

Tr

SBD

Multi Chip Discrete

UP0KG8DG

Silicon epitaxial planar type (SBD)
Silicon PNP epitaxial planar type (Tr)

For digital circuits

 Features

 Two elements incorporated into one package (SBD + Tr)
 Costs can be reduced through downsizing of the equipment and reduction of

the number of parts

 Basic Part Number

 MA2SD240G + UNR31A3G

 Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Reverse voltage V

Repetitive peak reverse voltage V

SBD

Forward current (Average) I

Peak forward current I

Non-repetitive peak forward

surge current

Collector-base voltage

(Emitter open)

Tr

Collector-emitter voltage

(Base open)

Collector current I

Total power dissipation P

Overall

Junction temperature T

Storage temperature T

Note) *: 50 Hz sine wave 1 cycle (Non-repetitive peak current)

F(AV)

I

V

V

R

RRM

FM

FSM

CBO

CEO

C

T

j

stg

20 V

20 V

200 mA

300 mA

1 A

-50

-50

-80

125 mW

125

–55 to +125

V

V

mA

°C

°C

 Package

Code

SSMini5-F3
Pin Name

1: Anode 4: Collector

2: Base 5: Cathode

3: Emitter

 Marking Symbol: 6K

 Internal Connection

Publication date: October 2007 SJJ00402AED 1

This product complies with the RoHS Directive (EU 2002/95/EC).

Bias Application Unit (N-50BU)

90%

Pulse Generator
(PG-10N)
Rs = 50 Ω

Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω

tp = 2 µs
tr = 0.35 ns
δ = 0.05

IF = IR = 100 mA
RL = 100 Ω

10%

Input Pulse Output Pulse

I

rr

= 10 mA

t

r

t

p

t

rr

V

R

I

F

t

t

A

UP0KG8DG

 Electrical Characteristics Ta = 25°C±3°C

 SBD

Parameter Symbol Conditions Min Typ Max Unit

Forward voltage V

Reverse current I

Terminal capacitance C

Reverse recovery time

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. Absolute frequency of input and output is 250 MHz

2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage

of current from the operating equipment.

3. *: trr measurement circuit

*

IF = 200 mA 0.50 0.58 V

F

VR = 10 V 0.1 1

R

VR = 0 V, f = 1 MHz 25 pF

t

IF = IR = 100 mA, Irr = 10 mA,

t

rr

RL = 100 W

3 ns

mA

 Tr2

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Collector-base cutoff current (Emitter open) I

Collector-emitter cutoff current (Base open) I

Emitter-base cutoff current (Collector open) I

Forward current transfer ratio h

Collector-emitter saturation voltage V

Output voltage high-level V

Output voltage low-level V

CBOIC

CEOIC

CBO

CEO

EBO

FE

CE(sat)IC

OH

OL

Input resistance R

Resistance ratio R1 / R

Transition frequency f

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

T

= -10 mA, IE = 0

= -2 mA, IB = 0

-50

-50

VCB = -50 V, IE = 0

VCE = -50 V, IB = 0

VEB = -6 V, IC = 0

VCE = -10 V, IC = -5 mA 80

= -10 mA, IB = - 0.3 mA

VCC = -5 V, VB = - 0.5 V, RL = 1 kW

-4.9

VCC = -5 V, VB = -3.5 V, RL = 1 kW

1

2

-30%

0.8 1.0 1.2

47

VCB = -10 V, IE = 2 mA, f = 200 MHz 80 MHz

- 0.1 mA

- 0.5 mA

- 0.1

mA

- 0.25

- 0.2

+30%

V

V



V

V

V

kW



2 SJJ00402AED

This product complies with the RoHS Directive (EU 2002/95/EC).

0 40 12080

0

120

40

80

UP0KG8D_PT-T

a

Total power dissipation P

T

(mW)

Ambient temperature Ta (°C)

0 0.2 0.6 0.80.4

0

200

160

40

80

120

UP0KG8D_IF-V

F

Forward current I

F

(m

A

)

Forward voltage VF (V

)

Ta = 85°C

−25°C

25°C

-25 15 55

1

10

2

10

3

10

4

10

UP0KG8D_IR-T

a

Reverse current I

R

(m

A

)

Ambient temperature Ta (°C

)

VR = 10 V

0 168

0

10

2

10

UP0KG8D_CD-V

R

Diode capacitance C

D

(pF)

Reverse voltage VR (V

)

f = 1 MHz
Ta = 25°C

UP0KG8DG

Common characteristics chart

PT  T

a

Characteristics charts of SBD

IF  VF IR  Ta CD  V

R

SJJ00402AED 3

This product complies with the RoHS Directive (EU 2002/95/EC).

0 −4 −8 −12

−40

−80

−120

−160

0

IB = −1.0 mA

− 0.1 mA

− 0.2 mA

− 0.3 mA

− 0.4 mA

− 0.5 mA

− 0.6 mA

− 0.7 mA

− 0.8 mA

− 0.9 mA

Ta = 25°C

UP0KG8D_

I

C

-

V

CE

Collector current I

C

(mA)

Collector-emitter voltage VCE (V)

−1−10

−1

−10 −10

2

−10

−1

−10

−1

−10

−2

UP0KG8D_

V

CE(sat)

-

I

C

Ta = 85°C

−25°C

25°C

IC /IB = 10

Collector-emitter saturation voltage V

CE(sat)

(V)

Collector current IC (mA)

−10

−1

−1 −10 −102−10

3

100

200

300

0

UP0KG8D_ hFE-I

C

25°C

VCE = −10 V

Ta = 85°C

−25°C

Forward current transfer ratio h

FE

Collector current IC (mA)

0 −10 −20 −30 −40

1

10

f = 1 MHz
Ta = 25°C

UP0KG8D_Cob-V

CB

Collector-base voltage VCB (V)

Collector output capacitance

(Common base, input open circuited) C

ob

(pF)

0 −1 −2

−10

−10

−1

−1

−10

−2

UP0KG8D_

I

O

-

V

IN

VO = −5 V
Ta = 25°C

Output current I

O

(mA)

Input voltage VIN (V)

−10

−2

−1 −10

2

−10−10

−1

−10

−1

UP0KG8D_

V

IN

-

I

O

VO = − 0.2 V
Ta = 25°C

Input voltage V

IN

(V)

Output current IO (mA)

UP0KG8DG

Characteristics charts of Tr

IC  VCE V

 IC hFE  I

CE(sat)

C

Cob  VCB IO  VIN VIN  I

O

4 SJJ00402AED

This product complies with the RoHS Directive (EU 2002/95/EC).

SSMini5-F3

Unit: mm

0.20

+0.05

−

0.02

1.60 ±0.05

5 4

1 2 3

1.60 ±0.05

1.20 ±0.05

1.00 ±0.05

(0.5) (0.5)

0.55 ±0.05

0 to 0.05

(5°)

(0.27)

0.13

+0.05

−0.02

(5°)

0.20 ±0.05

UP0KG8DG

SJJ00402AED 5

Request for your special attention and precautions in using the technical information and

semiconductors described in this book

(1)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

regulations of the exporting country, especially, those with regard to security export control, must be observed.

(2)The technical information described in this book is intended only to show the main characteristics and application circuit examples

of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.

(3)The products described in this book are intended to be used for standard applications or general electronic equipment (such as office

equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support

systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod­ucts may directly jeopardize life or harm the human body.

– Any applications other than the standard applications intended.

(4)The products and product specifications described in this book are subject to change without notice for modification and/or im-

provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.

(5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions

(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.

 Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure

mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.

(6)Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,

thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.

(7)This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita

Electric Industrial Co., Ltd.