Panasonic UP05C8GG User Manual

This product complies with the RoHS Directive (EU 2002/95/EC).

3

(G)

(S)

4

1

(E)2(B)

(C)6(D)

5

Tr

FET

Multi Chip Discrete

UP05C8GG

Silicon NPN epitaxial planar type (Tr)
Silicon epitaxial planar type (CCD load device)

For CCD output circuits

 Features

 Two elements incorporated into one package (Tr + CCD load device)
 Costs can be reduced through downsizing of the equipment and reduction of

the number of parts.

 Basic Part Number

 2SC3932G + CCD load device

 Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage

(Emitter open)

Collector-emitter voltage

Tr

(Base open)

Emitter-base voltage

(Collector open)

Collector current I

CCD

Limiting element voltage V

load

device

Overall

Limiting element current I

Total power dissipation

*

Junction temperature T

Storage temperature T

Note) * : Measuring on substrate at 17 mm × 10 mm × 1 mm

V

CBO

V

CEO

V

EBO

C

max

max

P

T

j

stg

30 V

20 V

3 V

50 mA

40 V

10 mA

125 mW

125

–55 to +125

°C

°C

 Package

Code

SSMini6-F2
Pin Name

1: Emitter 4: Source

2: Base 5: Drain

3: Gate 6: Collector

 Marking Symbol: 4V

 Internal Connection

Publication date: January 2008 SJJ00400BED 1

This product complies with the RoHS Directive (EU 2002/95/EC).

0 40 80 120

0

140

120

100

80

40

20

60

Total power dissipation P

T

(

mW

)

Ambient temperature Ta (°C

)

UN05C8B_PT-T

a

0 42 8 106 12

0

35

30

25

40

5

20

15

10

Collector current I

C

(

mA

)

Collector-emitter voltage VCE (V

)

UP05C8G_IC-V

CE

Ta = 25°C

IB = 300 µA

200 µA

150 µA

100 µA

50 µA

250 µA

0 0.4 0.60.2 1.00.8 1.2

0

50

40

60

10

30

20

Collector current I

C

(

mA

)

Base current IB (mA

)

UP05C8G_IC-I

B

VCE = 10 V

0.40.20.1 0.3 0.5 0.6 0.7 0.8 0.9

0

0

0.7

0.6

0.8

0.2

0.1

0.3

0.5

0.4

Base current I

B

(

mA

)

Base-emitter voltage VBE (V

)

UP05C8G_IB-V

BE

VCE = 10 V
Ta = 25°C

UP05C8GG

 Electrical Characteristics Ta = 25°C±3°C

 Tr

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

Emitter-base voltage (Collector open) V

Base-emitter voltage V

Forward current transfer ratio h

Transition frequency

*

CBOIC

EBOIE

BE

FE

f

T

Power gain PG VCB = 10 V, IE = -1 mA, f = 100 MHz 20 dB

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

: Pulse measurement

*

 CCD Load Device

Parameter Symbol Conditions Min Typ Max Unit

= 100 mA, IE = 0 30 V

= 10 mA, IC = 0 3 V

VCE = 10 V, IC = 2 mA 720 mV

VCE = 10 V, IC = 2 mA 25 250

VCB = 10 V, IE = -15 mA, f = 200 MHz 800 1 200 MHz



Pinchi off current I

Output impedance Z

VDS = 10 V, VG = 0 3.5 5.5 mA

P

VDS = 10 V, VG = 0 0.05 MW

O

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Common characteristics chart

PT  T

a

Characteristics charts of Tr

IC  VCE IC  IB IB  V

BE

2 SJJ00400BED