Panasonic UP05C8GG User Manual

This product complies with the RoHS Directive (EU 2002/95/EC).

3

(G)

(S)

4

1

(E)2(B)

(C)6(D)

5

Tr

FET

Multi Chip Discrete

UP05C8GG

Silicon NPN epitaxial planar type (Tr)
Silicon epitaxial planar type (CCD load device)

For CCD output circuits

 Features

 Two elements incorporated into one package (Tr + CCD load device)
 Costs can be reduced through downsizing of the equipment and reduction of

the number of parts.

 Basic Part Number

 2SC3932G + CCD load device

 Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage

(Emitter open)

Collector-emitter voltage

Tr

(Base open)

Emitter-base voltage

(Collector open)

Collector current I

CCD

Limiting element voltage V

load

device

Overall

Limiting element current I

Total power dissipation

*

Junction temperature T

Storage temperature T

Note) * : Measuring on substrate at 17 mm × 10 mm × 1 mm

V

CBO

V

CEO

V

EBO

C

max

max

P

T

j

stg

30 V

20 V

3 V

50 mA

40 V

10 mA

125 mW

125

–55 to +125

°C

°C

 Package

Code

SSMini6-F2
Pin Name

1: Emitter 4: Source

2: Base 5: Drain

3: Gate 6: Collector

 Marking Symbol: 4V

 Internal Connection

Publication date: January 2008 SJJ00400BED 1

This product complies with the RoHS Directive (EU 2002/95/EC).

0 40 80 120

0

140

120

100

80

40

20

60

Total power dissipation P

T

(

mW

)

Ambient temperature Ta (°C

)

UN05C8B_PT-T

a

0 42 8 106 12

0

35

30

25

40

5

20

15

10

Collector current I

C

(

mA

)

Collector-emitter voltage VCE (V

)

UP05C8G_IC-V

CE

Ta = 25°C

IB = 300 µA

200 µA

150 µA

100 µA

50 µA

250 µA

0 0.4 0.60.2 1.00.8 1.2

0

50

40

60

10

30

20

Collector current I

C

(

mA

)

Base current IB (mA

)

UP05C8G_IC-I

B

VCE = 10 V

0.40.20.1 0.3 0.5 0.6 0.7 0.8 0.9

0

0

0.7

0.6

0.8

0.2

0.1

0.3

0.5

0.4

Base current I

B

(

mA

)

Base-emitter voltage VBE (V

)

UP05C8G_IB-V

BE

VCE = 10 V
Ta = 25°C

UP05C8GG

 Electrical Characteristics Ta = 25°C±3°C

 Tr

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

Emitter-base voltage (Collector open) V

Base-emitter voltage V

Forward current transfer ratio h

Transition frequency

*

CBOIC

EBOIE

BE

FE

f

T

Power gain PG VCB = 10 V, IE = -1 mA, f = 100 MHz 20 dB

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

: Pulse measurement

*

 CCD Load Device

Parameter Symbol Conditions Min Typ Max Unit

= 100 mA, IE = 0 30 V

= 10 mA, IC = 0 3 V

VCE = 10 V, IC = 2 mA 720 mV

VCE = 10 V, IC = 2 mA 25 250

VCB = 10 V, IE = -15 mA, f = 200 MHz 800 1 200 MHz



Pinchi off current I

Output impedance Z

VDS = 10 V, VG = 0 3.5 5.5 mA

P

VDS = 10 V, VG = 0 0.05 MW

O

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Common characteristics chart

PT  T

a

Characteristics charts of Tr

IC  VCE IC  IB IB  V

BE

2 SJJ00400BED

This product complies with the RoHS Directive (EU 2002/95/EC).

0 0.4 0.60.2 1.20.8 1.0 1.4

0

40

50

10

20

30

Collector current I

C

(

mA

)

Base-emitter voltage VBE (V

)

UP05C8G_IC-V

BE

VCE = 10 V

Ta = 85°C

−25°C

25°C

0 2515 20105 30 35

100

1

10

0.1

UP05C8B_

C

ob

-

V

CB

Ta = 25°C
f = 1 MHz

Collector-base voltage VCB (V)

Collector output capacitance

(Common base, input open circuited) C

ob

(

pF

)

0.1 1 10

100

0.1

1

0.01

UP05C8G_

V

CE(sat)

-

I

C

Collector-emitter saturation voltage V

CE(sat)

(V)

Collector current IC (mA)

IC / IB = 10

Ta = 85°C

25°C

−25°C

1 10 100

50

300

200

250

150

100

350

0

UP05C8G_

h

FE

-

I

C

Forward current transfer ratio h

FE

Collector current IC (mA)

Ta = 85°C

−25°C

25°C

VCE = 10 V

0 42 14106 8 12 16

0

3.5

4.0

3.0

4.5

0.5

1.0

2.0

2.5

1.5

Peak current I

P

(

mA

)

Drain-source voltage VDS (V

)

UP05C8G_IP-V

DS

VG = 0

UP05C8GG

IC  V

Cob  V

BE

CB

V

 IC hFE  I

CE(sat)

C

Characteristics charts of CCD load device

IP  V

SJJ00400BED 3

DS

This product complies with the RoHS Directive (EU 2002/95/EC).

SSMini6-F2 Unit: mm

1.60

±0.05

0.20

+0.05

−0.02

6 5 4

1 2 3

1.60 ±0.05

1.20 ±0.05

1.00 ±0.05

(0.5) (0.5)

(5°)

0.55 ±0.05

0 to 0.05

(0.27)

0.13

+0.05

−0.02

(5°)

0.20 ±0.05

UP05C8GG

4 SJJ00400BED

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semiconductors described in this book

(1)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

regulations of the exporting country, especially, those with regard to security export control, must be observed.

(2)The technical information described in this book is intended only to show the main characteristics and application circuit examples

of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.

(3)The products described in this book are intended to be used for standard applications or general electronic equipment (such as office

equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support

systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod­ucts may directly jeopardize life or harm the human body.

– Any applications other than the standard applications intended.

(4)The products and product specifications described in this book are subject to change without notice for modification and/or im-

provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.

(5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions

(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.

 Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure

mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.

(6)Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,

thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.

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