Panasonic SKH00198BED, MA3J7440G User Manual
This product complies with the RoHS Directive (EU 2002/95/EC).
Schottky Barrier Diodes (SBD)
MA3J7440G
Silicon epitaxial planar type
For super high speed switching
For small current rectification
■ Features
•
High-density mounting is possible
•
Forward current (Average) I
F(AV)
= 200 mA rectification is possible
■ Package
•
Code
SMini3-F2
•
Pin Name
1: Anode
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Repetitive peak reverse voltage V
Forward current (Average) I
Peak forward current I
Non-repetitive peak forward I
surge current
*
Junction temperature T
Storage temperature T
Note)*:t = 1 s
R
RRM
F(AV)
FM
FSM
j
stg
30 V
30 V
200 mA
300 mA
150 °C
−55 to +150 °C
1A
2: N.C.
3: Cathode
■ Marking Symbol: M1M
■ Internal Connection
3
12
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse current I
F
R
Terminal capacitance C
Reverse recovery time
*
t
rr
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz.
4.*:trr measurement circuit
Bias Application Unit (N-50BU)
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Wave Form Analyzer
(SAS-8130)
= 50 Ω
R
i
IF = 200 mA 0.55 V
VR = 30 V 50 µA
VR = 0 V, f = 1 MHz 30 pF
t
IF = IR = 100 mA 3.0 ns
Irr = 0.1 IR , RL = 100 Ω
Input Pulse Output Pulse
t
t
p
r
10%
90%
V
R
t
p
= 0.35 ns
t
r
δ = 0.05
= 2 µs
t
I
F
= 100 mA
I
F
= 100 mA
I
R
= 100 Ω
R
L
t
rr
I
rr
= 0.1 I
t
R
Publication date: October 2007 SKH00198BED
1
MA3J7440G
3
10
2
Ta = 150°C
10
)
mA
(
F
10
1
I
F
This product complies with the RoHS Directive (EU 2002/95/EC).
V
100°C 25°C
F
−20°C
5
10
4
10
)
µA
(
R
3
10
2
10
IR V
Ta = 150°C
R
100°C
VF T
0.5
0.4
)
V
(
F
0.3
0.2
a
IF = 200 mA
100 mA
Forward current I
−1
10
−2
10
0 0.1 0.2 0.3 0.4 0.5 0.6
Forward voltage VF (V
IR T
5
10
4
10
)
µA
(
R
3
10
VR = 30 V
2
10
a
Reverse current I
10
1
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
)
15 V
5 V
Reverse current I
10
1
0 5 10 15 20 25 30
Reverse voltage VR (V
Ct V
40
)
pF
30
(
t
20
10
Terminal capacitance C
R
25°C
)
f = 1 MHz
= 25°C
T
a
Forward voltage V
0.1
0
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
I
T
)
A
(m
F(AV)
300
250
200
150
100
F(AV)
DC
50
a
I
F
t
p
Tj = 150
10 mA
)
T
°C
Forward current (Average) I
0
0 5 10 15 20 25 30
)
Reverse voltage VR (V
)
0
0
604020 180160120 14010080
Ambient temperature Ta
(°C)
2
SKH00198BED
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