Panasonic PUB7457 Datasheet

Power Transistor Arrays (F-MOS FETs)

PU7457

Silicon N-Channel Power F-MOS FET (with built-in zener diode)

■ Features

●High avalanche energy capacity

●High electrostatic breakdown voltage

●No secondary breakdown

●High breakdown voltage, large allowable power dissipation

●Allowing Low-voltage drive

■ Applications

●Contactless relay

●Diving circuit for a solenoid

●Driving circuit for a motor

●Control equipment

●Switching power supply

■ Absolute Maximum Ratings (T

Parameter

Drain to Source breakdown voltage
Gate to Source voltage

DC

Drain current

Pulse
Avalanche energy capacity
Allowable power
dissipation

Non repetition

TC = 25°C

Ta = 25°C
Channel temperature
Storage temperature

*

L = 5mH, IL = 3A, 1 pulse

Symbol

V

DSS

V

GSS

I

D

I

DP

EAS

P

D

T

ch

T

stg

*

= 25°C)

C

Ratings

100 ± 15

±20

22.5

150

−55 to +150

±3
±9

15

3.5

Unit

V
V
A
A

mJ

W

°C
°C

25.3±0.2

8.0

9.5±0.2

1.65±0.2

0.5±0.15

4.4±0.5

C1.5±0.5

1.0±0.25

2.54±0.2
9✕2.54=22.86±0.25

13572468

10-Lead Plastic SIL Package

Internal Connection

357

2

468

910

unit: mm

4.0±0.2

G: Gate
D: Drain
S: Source

9

0.8±0.25

0.5±0.15

101

■ Electrical Characteristics (T

Parameter

Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage

Drain to Source ON-resistance

Forward transfer admittance
Diode forward voltage
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time
Fall time
Turn-off time (delay time)

C

Symbol

I

DSS

I

GSS

V

DSS

V

th

R

DS(on)1

R

DS(on)2

| Yfs |
V

DSF

C

iss

C

oss

C

rss

t

on

t

f

t

d(off)

= 25°C)

Conditions

VDS = 80V, VGS = 0
VGS = ±20V, VDS = 0
ID = 1mA, VGS = 0
VDS = 10V, ID = 1mA
VGS = 10V, ID = 2A
VGS = 4V, ID = 2A
VDS = 10V, ID = 2A
IDR = 3A, VGS = 0

VDS = 10V, VGS = 0, f = 1MHz

VGS = 10V, ID = 2A
VDD = 50V, RL = 25Ω

min

85

1

2.5

typ

300
400

4

130
160

25

0.2

0.3

1.5

max

10
±10
115

2.5
450
600

−1.6

Unit

µA
µA

V
V

mΩ
mΩ

S

V
pF
pF
pF

µs
µs
µs

1

Power Transistor Arrays (F-MOS FETs) PU7457

Area of safe operation (ASO) PD  Ta EAS  T

100

30

I

DP

10

)

A

(

I

D

D

3

1ms

1

10ms
100ms

0.3

Drain current I

0.1

0.03

0.01
1 10 100 10003 30 300

Non repetitive pulse

=25˚C

T

C

DC

Drain to source voltage VDS (V

IAS  L-load ID  V

10

3

)

I

D

A

(

1

t=100µs

22.5mJ

TC=25˚C

24

)

W

(

20

D

16

12

8

4

Allowable power dissipation P

0

0 16040 12080 14020 10060

)

Ambient temperature Ta (˚C

(1) TC=Ta
(2) With a 50 × 50 × 2mm

Al heat sink

(3) Without heat sink

(1)

(2)

(3)

)

GS

8

7

6

)
A

(

5

D

VDS=10V
T

=25˚C

C

25

)
mJ

(

20

15

10

5

Avalanche energy capacity EAS

0

25 15012550 10075

Junction temperature Tj (˚C

6

)

5

V

(

th

4

Vth  T

j

ID=3A

)

C

VDS=10V
I

=1mA

D

0.3

0.1

Avalanche current IAS

0.03

0.01
1 3 10 30 100

L-load (mH

8

7

=10V

V

GS

6

)

A

(

Drain current I

5

D

4

3

2

1

0

060504010 3020

4V

ID  V

DS

3.5V

Drain to source voltage VDS (V

4

3

Drain current I

2

1

0

0654132

)

3V

2.5V
15W

)

Gate to source voltage VGS (V

R

 I

DS(on)

600

)

Ω

(

500

DS(on)

400

300

200

100

Drain to source ON-resistance R

0

0 4.01.0 3.02.0 3.50.5 2.51.5

D

V

=4V

GS

10V

Drain current ID (A

)

TC=25˚C

)

3

2

1

Gate threshold voltage V

0

0 15012510025 7550

Case temperature TC (˚C

)
S

(
|

| Yfs |  I

5

VDS=10V

=25˚C

T

C

4

fs

3

2

1

D

Forward transfer admittance |Y

0

0 4.01.0 3.02.0 3.50.5 2.51.5

Drain current ID (A

)

)

2