Panasonic PUB4702 Datasheet

Power Transistor Arrays (F-MOS FETs)

PUB4702

Silicon N-Channel Power F-MOS FET

■ Features

●Avalanche energy capacity guaranteed

●High-speed switching

●Low ON-resistance

●No secondary breakdown

●Low-voltage drive

●Incorporating built-in zener diodes

■ Applications

●Contactless relay

●Diving circuit for a solenoid

●Driving circuit for a motor

●Control equipment

●Switching power supply

■ Absolute Maximum Ratings (T

Parameter

Drain to Source breakdown voltage
Gate to Source voltage

Drain current

DC

Pulse
Avalanche energy capacity
Allowable power
dissipation

TC = 25°C

Ta = 25°C
Channel temperature
Storage temperature

*

L = 5mH, IL = 1A, 1 pulse

Symbol

V
V
I

D

I

DP

EAS

P

D

T

ch

T

stg

DSS

GSS

*

= 25°C)

C

Ratings

35 ± 10

−55 to +150

±15

±1
±2

2.5
15

3.5

150

Unit

V
V
A
A

mJ

W

°C
°C

9.5±0.2

1.65±0.2

C1.5±0.5

8.0

4.4±0.5

25.3±0.2

0.5±0.15

1.0±0.25

2.54±0.2
9✕2.54=22.86±0.25

13572468

10-Lead Plastic SIL Package

910

unit: mm

4.0±0.2

0.8±0.25

0.5±0.15

G: Gate
D: Drain
S: Source

■ Electrical Characteristics (T

Parameter

Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage

Drain to Source ON-resistance

Forward transfer admittance
Diode forward voltage
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time
Fall time
Turn-off time (delay time)

C

Symbol

I

DSS

I

GSS

V

DSS

V

th

R

DS(on)1

R

DS(on)2

| Yfs |
V

DSF

C

iss

C

oss

C

rss

t

on

t

f

t

d(off)

= 25°C)

Conditions

VDS = 25V, VGS = 0
VGS = ±15V, VDS = 0
ID = 1mA, VGS = 0
VDS = 10V, ID = 1mA
VGS = 10V, ID = 0.5A
VGS = 4V, ID = 0.5A
VDS = 10V, ID = 0.5A
IDR = 1A, VGS = 0

VDS = 10V, VGS = 0, f = 1MHz

VGS = 10V, ID = 0.5A
VDD = 25V, RL = 50Ω

min

25

1

0.6

typ

220
390

1

135

85

50
120
390
800

max

10

±10

45

2.5
380
680

−1.5

Unit

µA
µA

V
V

mΩ
mΩ

S

V
pF
pF
pF
ns
ns
ns

1

Power Transistor Arrays (F-MOS FETs) PUB4702

Area of safe operation (ASO) PD  Ta ID  V

10

3

I

DP

)
A

(

D

1

0.3

Non repetitive pulse

=25˚C

T

C

100ms
10ms

Drain current I

0.1

0.03

Drain to source voltage VDS (V

R

 I

DS(on)

)

700

mΩ

(

600

DS(on)

500

400

300

200

100

0

Drain to source ON-resistance R

Ta=150˚C

85˚C

054132

25˚C

D

V

GS

Drain current ID (A

t=1ms

=4V

)

16

)

14

W

(

D

12

10

8

6

4

2

Allowable power dissipation P

301010.3 3

)

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

2.5

)
S

(
|

2.0

fs

1.5

1.0

0.5

(1) TC=Ta
(2) With a 50 × 50 × 2mm

Al heat sink

(3) Without heat sink

(1)

(2)

(3)

| Yfs |  I

D

VDS=10V
Ta=25˚C

)

Forward transfer admittance |Y

0

0 2.00.5 1.51.0

Drain current ID (A

)

2.00

1.75

1.50

)
A

(

1.25

D

1.00

0.75

Drain current I

0.50

0.25

0

054132

Gate to source voltage VGS (V

C

iss

3

10

)

,

)

pF

(

rss

,C

Common source

(

oss

,C

iss

C

)

2

10

, Output capacitance

)

Common source

(

Common source

(

Input capacitance

Reverse transfer capacitance

10

0252051510

Drain to source voltage VDS (V

, C

oss

, C

GS

VDS=10V
Ta=25˚C

)

 V

rss

DS

f=1MHz
Ta=25˚C

C

iss

C

oss

C

rss

)

2

10

)

˚C/W

(

10

(t)

th

1

Thermal resistance R

–1

10

–4

10

2

R

 t

th(t)

Notes: Rth was measured at Ta=25˚C

and under natural convection.
Without heat sink

–3

–2

10

Time t (s

–1

10

1

1010

)