Panasonic PUB4701 Datasheet

Power Transistor Arrays (F-MOS FETs)

PUB4701

Silicon N-Channel Power F-MOS FET

■ Features

●Avalanche energy capacity guaranteed

●High-speed switching

●Low ON-resistance

●No secondary breakdown

●Low-voltage drive

■ Applications

●Contactless relay

●Diving circuit for a solenoid

●Driving circuit for a motor

●Control equipment

●Switching power supply

■ Absolute Maximum Ratings (T

Parameter

Drain to Source breakdown voltage
Gate to Source voltage

Drain current

DC

Pulse
Avalanche energy capacity
Allowable power
dissipation

TC = 25°C

Ta = 25°C
Channel temperature
Storage temperature

*

L = 5mH, IL = 3A, 1 pulse

Symbol

V
V
I

D

I

DP

EAS

P

D

T

ch

T

stg

DSS

GSS

*

= 25°C)

C

Ratings

22.5

−55 to +150

150
±20

±6

±12

15

3.5

150

Unit

V
V
A
A

mJ

W

°C
°C

9.5±0.2

1.65±0.2

C1.5±0.5

8.0

4.4±0.5

25.3±0.2

0.5±0.15

1.0±0.25

2.54±0.2
9✕2.54=22.86±0.25

13572468

10-Lead Plastic SIL Package

910

unit: mm

4.0±0.2

0.8±0.25

0.5±0.15

G: Gate
D: Drain
S: Source

■ Electrical Characteristics (T

Parameter

Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage

Drain to Source ON-resistance

Forward transfer admittance
Diode forward voltage
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time (delay time)
Rise time
Fall time
Turn-off time (delay time)

C

Symbol

I

DSS

I

GSS

V

DSS

V

th

R

DS(on)1

R

DS(on)2

| Yfs |
V

DSF

C

iss

C

oss

C

rss

t

d(on)

t

r

t

f

t

d(off)

= 25°C)

Conditions

VDS = 120V, VGS = 0
VGS = ±20V, VDS = 0
ID = 1mA, VGS = 0
VDS = 10V, ID = 1mA
VGS = 10V, ID = 3A
VGS = 4V, ID = 3A
VDS = 10V, ID = 3A
IDR = 3A, VGS = 0

VDS = 10V, VGS = 0, f = 1MHz

VGS = 10V, ID = 3A
VDD = 100V, RL = 33.3Ω

min

150

1

3

typ

0.42

0.5

5.3

620
120

35
10
30
85

290

max

10
±1

2.5

0.6

0.7

−1.7

Unit

µA
µA

V
V

Ω
Ω

S

V
pF
pF
pF

ns
ns
ns
ns

1

Power Transistor Arrays (F-MOS FETs) PUB4701

Area of safe operation (ASO) PD  Ta ID  V

I

DP

10

I

D

)
A

(

3

D

10ms

50ms

1

Drain current I

0.3

Non repetitive pulse

=25˚C

T

C

0.1

Drain to source voltage VDS (V

ID  V

6

5

)

A

(

4

D

3

2

Drain current I

1

GS

t=1ms

VDS=10V
T

10010330

)

=25˚C

C

16

)

14

W

(

D

12

10

8

6

4

2

Allowable power dissipation P

0

0 16040 12080 14020 10060

(1) TC=Ta
(2) With a 50 × 50 × 2mm

Al heat sink

(3) Without heat sink

(1)

(2)

(3)

Ambient temperature Ta (˚C

R

 I

)
mΩ

(

DS(on)

DS(on)

1.2

1.0

0.8

0.6

0.4

0.2

VGS=4V

D

10V

T

=25˚C

C

)

7

7

6

6

)

5

5

A

(

D

4

4

3

3

2

2

Drain current I

1

1

0

0

020164128

Drain to source voltage VDS (V

4.0V

DS

TC=25˚C

3.5V

3.0V

2.5V

)

0

012108264

Gate to source voltage VGS (V

2

0

Drain to source ON-resistance R

0654132

)

Drain current ID (A

)