Panasonic PNZ3108 Datasheet
PIN Photodiodes
PNZ3108
PIN Photodiode
For optical control systems
Features
High sensitivity and low dark current
For one-dimensional light-point position detection
Good positional linearity
Small plastic package
Unit : mm
5.0±0.1
2.54±0.1
43
1.0±0.1
1.0±0.3
13.5±1.0
4.0±0.1
1.0±0.3
4-0.6
4-0.5±0.15
12
1.0±0.1
10˚
10˚
0.8±0.2
0.6±0.1
+0.1
–0.2
1.8±0.3
5˚
5˚
+0.1
0.2
–0.05
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Symbol Ratings Unit
Reverse voltage (DC) V
Power dissipation P
Operating ambient temperature
T
Storage temperature T
R
D
opr
stg
30 V
30 mW
–25 to +85 ˚C
–30 to +100 ˚C
Electro-Optical Characteristics (Ta = 25˚C)
Parameter Symbol Conditions min typ max Unit
Dark current I
Photo current I
Peak sensitivity wavelength
Response time tr, t
Capacitance between pins C
Resistance between electrodes
R
Gradient of position signal a
*1
IL = I1 + I
Note: I1 and I2 are the photoelectric currents of anodes A1 and A2.
White tungsten lamp light source (color temperature T = 2856K)
*2
GaAs light emitting diode light source ( λ = 800nm)
*3
Va is the potential difference between anodes A1 and A2.
*4
a = | (I1–I2)/(I1+I2) |
Note :Incident light is at the position 100 µm from the reference position.
2
The reference position is the position where I1 = I
VR = 1V 2 nA
D
VR = 1V, L = 1000 lx 7 12 µA
*1
L
VR = 1V, λ = 900nm, E = 1mW/cm
λ
VR = 1V 940 nm
P
*2
VR = 1V, RL = 1kΩ 5 µs
f
VR = 1V, f = 1MHz 8 pF
t
*3
VR = 1V, Va = 0.5V 250 kΩ
S
*4
VR = 1V 0.133
2.
5˚
1: Anode 1
5˚
2: Common cathode
3: Anode 2
4: Common cathode
Dimensions of detection area
2.1
1.5
0.8
1.1
2
8 µA
Unit : mm
1
PNZ3108 PIN Photodiodes
P
40
30
(mW)
D
20
10
Power dissipation P
0
– 30
D
0 20406080100
Ambient temperature Ta (˚C )
I
240
200
160
(pA)
D
120
80
Dark current I
40
D
Ta = 25˚C
— Ta
— V
I
— L
3
10
Ta = 25˚C
T = 2856K
2
10
(µA)
L
10
Photo current I
1
–1
10
2
10
L
160
VR = 10V
0V
3
10
4
10
10
140
120
(%)
L
100
80
60
40
Relative photo current I
20
5
0
– 40
Illuminance L (lx)
I
— Ta
R
2
10
VR = 1V
10
1
(nA)
D
–1
10
–2
10
Dark current I
–3
10
D
Spectral sensitivity characteristics
100
V
Ta = 25˚C
80
60
40
Relative sensitivity S (%)
20
I
— Ta
L
= 10V
V
R
L = 1000 lx
T = 2856K
– 20 0 20 60 8040 100
Ambient temperature Ta (˚C )
= 1V
R
0
03281624
Reverse voltage VR (V)
R
— Ta
400
(kΩ)
S
300
200
100
S
Resistance between electrodes R
0
– 40 – 20
0 20406080100
Ambient temperature Ta (˚C )
2
–4
10
– 40 20 60 100– 20 04080
Ambient temperature Ta (˚C )
C
— V
t
10
(pF)
t
10
3
2
10
1
R
Capacitance between pins C
–1
10
–1
10
11010
Reverse voltage VR (V)
0
200
(µs)
f
, t
r
3
10
2
10
10
Rise time, Fall time t
1
–1
10
2
10
400 600 800 1000 1200
Wavelength λ (nm)
tr , t
— R
f
L
V
Sig.IN
Sig.
OUT
50Ω
–2
10
= 5V
CC
Sig.
OUT
t
R
VR = 1V
–1
1
d
L
trt
10 10 210
f
Ta = 25˚C
External load resistance RL (kΩ)
90%
10%
3
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