Panasonic PNZ263L Datasheet
Darlington Phototransistors
PNZ263L
Darlington Phototransistor
For optical control systems
Features
Darlington output, high sensitivity
Small size, thin side-view type package
Adoption of visible light cutoff resin
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Symbol Ratings Unit
Collector to emitter voltage
Emitter to collector voltage
Collector current I
Collector power dissipation
Operating ambient temperature
Storage temperature T
V
CEO
V
ECO
C
P
C
T
opr
stg
20 V
5V
30 mA
100 mW
–25 to +80 ˚C
–30 to +100 ˚C
3.5±0.3
+1.0
Gate the rest
1.1 0.8 max.
2.4
–0.5
28.0
2.4 14.3(8.9)
Unit : mm
1.95±0.25
3.0±0.3
0.8
1.1
1.350.8
2
2.54
R0.5
Not soldered
2-0.8 max.
2-0.8 max.
2-0.5±0.15
1
ø1.1
2.15 max.
1.4±0.2
0.50.9
0.3±0.15
1: Collector
2: Emitter
Electro-Optical Characteristics (Ta = 25˚C)
Parameter Symbol Conditions min typ max Unit
Dark current I
Sensitivity to infrared emitters
CEO
S
Peak sensitivity wavelength
Acceptance half angle θ
Response time tr, t
Collector saturation voltage
*1
Measurements were made using infrared light (λ = 940 nm) as a light source.
*2
Switching time measuring circuit
Sig.IN
50Ω
V
CC
R
L
Sig.OUT
V
CE(sat)IC
(Input pulse)
(Output pulse)
VCE = 10V 0.1 0.5 µA
*1
VCE = 10V, H = 3.75 µW/cm
IR
λ
VCE = 10V 850 nm
P
Measured from the optical axis to the half power point
*2
VCC = 10V, IC = 1mA, RL = 100Ω 150 µs
f
= 100µA, H = 3.75 µW/cm
90%
t
d
t
r
10%
t
f
2
60 200 µA
25 deg.
2
t
: Delay time
d
: Rise time (Time required for the collector photo current to
t
r
increase from 10% to 90% of its final value)
: Fall time (Time required for the collector photo current to
t
f
decrease from 90% to 10% of its initial value)
0.7 1.5 V
1
PNZ263L Darlington Phototransistors
P
— Ta
120
100
(mW)
C
80
60
40
20
Collector power dissipation P
0
– 20
C
0 20406080100
Ambient temperature Ta (˚C )
I
— Ta
10
CE(L)
(mA)
1
CE(L)
–1
10
Collector photo current I
VCE = 10V
T = 2856K
I
— V
32
(mA)
24
CE(L)
16
PC = 100mW
L =100 lx
8
Collector photo current I
0
02016812424
CE(L)
50 lx
CE
Ta = 25˚C
T = 2856K
30 lx
10 lx
2
10
V
Ta = 25˚C
T = 2856K
10
(mA)
CE(L)
1
–1
10
Collector photo current I
–2
10
1
Collector to emitter voltage VCE (V)
2
10
VCE = 10V
10
(µA)
CEO
1
–1
Dark current I
10
I
CEO
— Ta
Spectral sensitivity characteristics
100
80
60
40
Relative sensitivity S (%)
20
I
CE(L)
= 10V
CE
10 10
Illuminance L (lx)
— L
2
V
= 10V
CE
Ta = 25˚C
3
10
–2
10
– 40 0 40 80 120
Ambient temperature Ta (˚C )
Directivity characteristics
0˚ 10˚ 20˚ 30˚
120
80
60
40
Relative sensitivity
2
40˚
50˚
60˚
S (%)
70˚
80˚
90˚
–2
10
– 20 0 40 8020 60 100
Ambient temperature Ta (˚C )
t
— I
r
CE(L)
Sig.IN
Sig.
OUT
50Ω
(µs)
r
3
10
V
CC
Sig.
OUT
t
R
d
L
t
r
RL = 1kΩ
Rise time t
2
10
VCC = 10V
10
–2
10
–1
10
Collector photo current I
Ta = 25˚C
110
CE(L)
t
f
500Ω
100Ω
(mA)
90%
10%
0
700 800 900 1000 1100 1200
600
Wavelength λ (nm)
t
Sig.IN
Sig.
OUT
50Ω
(µs)
f
3
10
Fall time t
2
10
10
–2
10
10
Collector photo current I
f
–1
— I
V
CC
CE(L)
Sig.
OUT
t
R
d
L
t
t
r
RL = 1kΩ
500Ω
100Ω
VCC = 10V
Ta = 25˚C
110
(mA)
CE(L)
f
90%
10%
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