Panasonic PNZ163NC Datasheet
Phototransistors
PN163NC
Silicon NPN Phototransistor
For optical control systems
Features
High sensitivity
Fast response : tr = 4 µs (typ.)
Adoption of visible light cutoff resin
Ultraminiature, thin side-view type package
Gate the rest
0.8
1.1
2.4 0.8 max.1.1
3.5±0.312 min.
3.0±0.3
ø1.1
R0.5
2-0.5±0.15 0.3±0.15
Unit : mm
1.95±0.25
1.4±0.2
0.50.9
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Symbol Ratings Unit
Collector to emitter voltage
Collector current I
Collector power dissipation
Operating ambient temperature
Storage temperature T
V
CEO
C
P
C
T
opr
stg
20 V
20 mA
50 mW
–25 to +85 ˚C
–30 to +100 ˚C
Electro-Optical Characteristics (Ta = 25˚C)
Parameter Symbol Conditions min typ max Unit
Dark current I
Sensitivity to infrared emitters
Peak sensitivity wavelength
CEO
S
λ
Acceptance half angle θ
Rise time t
Fall time t
Collector saturation voltage
*1
Measurements were made using infrared light (λ = 940 nm) as a light source.
*2
Switching time measurement circuit
Sig.IN
50Ω R
V
CC
L
V
CE(sat)ICE(L)
(Input pulse)
Sig.OUT 10%
(Output pulse)
VCE = 10V 0.2 µA
*1
VCE = 10V, H = 15µW/cm
IR
VCE = 10V 850 nm
P
Measured from the optical axis to the half power point
*2
VCC = 10V, I
r
*2
RL = 100Ω 4 µs
f
= 5mA 4 µs
CE(L)
= 3µA, H = 15µW/cm
90%
t
d
t
r
t
f
Not soldered 2.15 max.
2
12
2.54
1: Collector
2: Emitter
640µA
25 deg.
2
td : Delay time
: Rise time (Time required for the collector photo current to
t
r
increase from 10% to 90% of its final value)
: Fall time (Time required for the collector photo current to
t
f
decrease from 90% to 10% of its initial value)
0.5 V
1
Phototransistors PN163NC
P
— Ta
60
50
(mW)
C
40
30
20
10
Collector power dissipation P
0
– 20
C
0 20406080100
Ambient temperature Ta (˚C )
I
— Ta
2
10
10
CEO
VCE = 10V
(nA)
CEO
1
–1
Dark current I
10
I
— V
3.0
Ta = 25˚C
T = 2856K
2.5
(mA)
2.0
CE(L)
1.5
1.0
0.5
Collector photo current I
0
02016812424
CE(L)
CE
L = 1000 lx
500 lx
100 lx
2
10
V
Ta = 25˚C
T = 2856K
(mA)
10
CE(L)
1
–1
10
Collector photo current I
–2
10
1
Collector to emitter voltage VCE (V)
Spectral sensitivity characteristics
100
80
60
40
Relative sensitivity S (%)
20
10
(mA)
10
CE(L)
I
— Ta
2
1
CE(L)
VCE = 10V
T = 2856K
Collector photo current I
I
CE(L)
= 10V
CE
10 10
Illuminance L (lx)
— L
2
V
CE
Ta = 25˚C
= 10V
3
10
–2
10
– 20 0 40 8020 60 100
Ambient temperature Ta (˚C )
Directivity characteristics
0˚ 10˚ 20˚
100
90
80
70
60
50
40
30
Relative sensitivity S (%)
20
2
30˚
40˚
50˚
60˚
70˚
80˚
90˚
–1
10
– 40 0 40 80 120
Ambient temperature Ta (˚C )
t
— I
r
CE(L)
4
10
3
10
(µs)
r
2
10
10
Rise time t
1
–1
10
–1
–2
10
Collector photo current I
VCC = 10V
Ta = 25˚C
RL = 1kΩ
10 10
110
CE(L)
500Ω
100Ω
(mA)
2
0
700 800 900 1000 1100 1200
600
Wavelength λ (nm)
t
4
10
3
10
(µs)
2
f
10
10
Fall time t
1
–1
10
–1
–2
10
Collector photo current I
f
— I
CE(L)
110
VCC = 10V
Ta = 25˚C
RL = 1kΩ
500Ω
100Ω
10 10
(mA)
CE(L)
2
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