Panasonic PNZ155 User Manual
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Phototransistors
PNZ155 (PN155)
Silicon NPN Phototransistor
For optical control systems
Features
High sensitivity
Wide spectral sensitivity, suited for detecting GaAs LEDs
Low dark current
Flat type plastic package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Symbol Ratings Unit
Collector to emitter voltage
Emitter to collector voltage
Collector current I
Collector power dissipation
Operating ambient temperature
Storage temperature T
V
CEO
V
ECO
C
P
C
T
opr
stg
20 V
5V
10 mA
100 mW
–25 to +85 ˚C
–30 to +100 ˚C
4.5±0.15
3.9±0.2512.8 min.
(2.95) 1.5±0.2
12
Not soldered 0.8 max.
2-1.2±0.3
2-0.45±0.15
2.54±0.2
1.6±0.15
0.8±0.13.5±0.15
0.45±0.2
Unit : mm
2.1±0.15
1: Emitter
2: Collector
Electro-Optical Characteristics (Ta = 25˚C)
Parameter Symbol Conditions min typ max Unit
Dark current I
Collector photo current I
Peak sensitivity wavelength
CEO
CE(L)
λ
Acceptance half angle θ
Response time tr, t
Collector saturation voltage
*1
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2
Switching time measurement circuit
Sig.IN
50Ω R
V
CC
V
CE(sat)
(Input pulse)
Sig.OUT 10%
L
(Output pulse)
VCE = 10V 0.01 1 µA
*1
VCE = 10V, L = 100 lx 0.05 0.2 mA
VCE = 10V 800 nm
P
Measured from the optical axis to the half power point
*2
f
*1
VCC = 10V, I
I
= 1mA, L = 1000 lx 0.2 0.5 V
CE(L)
t
d
t
r
Note) The part number in the parenthesis shows conventional part number.
= 1mA, RL = 100Ω 4 µs
CE(L)
td : Delay time
: Rise time (Time required for the collector photo current to
t
90%
r
increase from 10% to 90% of its final value)
: Fall time (Time required for the collector photo current to
t
t
f
f
decrease from 90% to 10% of its initial value)
70 deg.
1
Phototransistors PNZ155
— Ta
P
120
100
(mW)
C
80
60
40
20
Collector power dissipation P
0
– 20
C
0 20406080100
Ambient temperature Ta (˚C )
Spectral sensitivity characteristics
100
= 10V
V
CE
Ta = 25˚C
80
60
40
Relative sensitivity S (%)
20
I
CE(L)
VCE = 10V
2
10
Ta = 25˚C
T = 2856K
10
(mA)
CE(L)
1
–1
10
–2
10
Collector photo current I
–3
10
1
10 10
10
Illuminance L (lx)
— I
t
r
4
10
3
10
(µs)
r
2
10
10
Rise time t
1
— L
2
CE(L)
VCC = 10V
Ta = 25˚C
RL = 1kΩ
500Ω
100Ω
— Ta
I
10
1
CEO
VCE = 10V
(µA)
CEO
–1
10
–2
Dark current I
10
–3
3
10
10
4
– 40 0 40 80 120
Ambient temperature Ta (˚C )
— I
t
f
CE(L)
4
10
3
10
(µs)
2
f
10
10
Fall time t
1
VCC = 10V
Ta = 25˚C
RL = 1kΩ
500Ω
100Ω
0
400 600 800 1000 1200
200
Wavelength λ (nm)
–1
10
–1
–2
10
Collector photo current I
10 10
110
CE(L)
2
(mA)
–1
10
–1
–2
10
Collector photo current I
10 10
110
CE(L)
2
(mA)
2
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