Panasonic PNZ154NC User Manual
Phototransistors
(Input pulse)
(Output pulse)
50 Ω
R
L
tr: Rise time
t
f
: Fall time
V
CC
Sig. out 10%
90%
Sig. in
t
r
t
f
PNZ154NC
Silicon planar type
For optical control systems
Features
Fast response
Wide spectral sensitivity characteristics
Adoption of visible light cutoff resin
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-emitter voltage (Base open) V
Emitter-collector voltage (Base open) V
Collector current I
Collector power dissipation P
Operating ambient temperature T
Storage temperature T
CEO
ECO
C
C
opr
stg
20 V
5 V
20 mA
100 mW
–25 to +85
–30 to +100
°C
°C
Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
1
Photocurrent
Collector-emitter cutoff current (Base open)
Collector-emitter saturation voltage
Peak sensitivity wavelength
Half-power angle
Rise time
Fall time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%.
3. This device is designed by disregarding radiation.
4 *1: Source: Tungsten (color temperature 2 856 K)
*2: Switching time measurement circuit
*
1
*
2
*
2
*
V
I
L
I
CEO
CE(sat)
λ
PD
θ
t
r
t
f
VCE = 10 V, L = 500 lx 0.7 2.0 mA
VCE = 10 V 0.01 0.20
IL = 1 mA, L = 1 000 lx 0.2 0.5 V
VCE = 10 V 850 nm
The angle from which photocurrent
becomes 50%
VCC = 10 V, IL = 5 mA, RL = 100 W
27
4 10
4 10
mA
°
ms
ms
Publication date: October 2008 SHE00063AED 1
PNZ154NC
Package (Unit: mm)
Pin name
1: Emitter
2: Collector
2 SHE00063AED
Loading...